RESUMEN
Gallium Phosphide (GaP) has a band gap of 2.26 eV and a valance band edge that is more negative than the water oxidation level. Hence, it may be a promising material for photoelectrochemical water splitting. However, one thing GaP has in common with other III-V semiconductors is that it corrodes in photoelectrochemical reactions. Cobalt oxide (CoOx) is a chemically stable and highly active oxygen evolution reaction co-catalyst. In this study, we protected a GaP photoanode by using a 20 nm TiO2 as a protection layer and a 2 nm cobalt oxide co-catalyst layer, which were both deposited via atomic layer deposition (ALD). A GaP photoanode that was modified by CoOx exhibited much higher photocurrent, potential, and photon-to-current efficiency than a bare GaP photoanode under AM1.5G illumination. A photoanode that was coated with both TiO2 and CoOx layers was stable for over 24 h during constant reaction in 1 M NaOH (pH 13.7) solution under one sun illumination.
RESUMEN
The management of recurrent epistaxis, especially posterior epistaxis, is difficult. Anterior and posterior nasal packing constitutes the initial treatment. Ligation of the ethmoid arteries and maxillary artery is the next step if the previous methods fails. We have described three cases with recurrent epistaxis; all underwent successful diagnostic angiography and therapeutic embolization of the maxillary artery. The role of embolization in the management of persistent epistaxis has been discussed.