RESUMEN
Recently, polycyclic aromatic hydrocarbons (PAHs) and oxygenated PAHs (OPAHs) have been attracting considerable attention owing to their high toxicity. Understanding their formation mechanism during combustion processes is important to control their emission. However, there are few studies that have quantitatively investigated OPAH formation in the fuel-rich oxidation of hydrocarbons, despite the availability of several studies on PAH formation. In this study, benzofuran and dibenzofuran as OPAHs were quantified in the fuel-rich oxidation of toluene using a flow reactor at atmospheric pressure in a temperature range of 1050-1350 K at equivalence ratios from 3.0 to 12.0 and residence times from 0.2 to 1.5 s. In addition to benzofuran and dibenzofuran, 4 types of monocyclic aromatic hydrocarbons and 19 types of PAHs were also evaluated. The experimental data obtained in this study were compared with those of the ethylene oxidation performed in our previous study. The existing kinetic model for PAH growth was modified based on several theoretical studies to predict the behavior of OPAHs with furan structures. The modified model showed significant improvements in the prediction of benzofuran and dibenzofuran formation. Based on the rate of production and sensitivity analysis using the modified model, the dominant reaction pathways of benzofuran and dibenzofuran were investigated.
RESUMEN
A technique for preparation of a pillar-shaped specimen and its multidirectional observation using a combination of a scanning transmission electron microscope (STEM) and a focused ion beam (FIB) instrument has been developed. The system employs an FIB/STEM compatible holder with a specially designed tilt mechanism, which allows the specimen to be tilted through 360 degrees [T. Yaguchi, M. Konno, T. Kamino, T. Hashimoto, T. Ohnishi, K. Umemura, K. Asayama, Microsc. Microanal. 9 (Suppl. 2) (2003) 118; T. Yaguchi, M. Konno, T. Kamino, T. Hashimoto, T. Ohnishi, M. Watanabe, Microsc. Microanal. 10 (Suppl. 2) (2004) 1030]. This technique was applied to obtain the three-dimensional (3D) elemental distributions around a contact plug of a Si device used in a 90-nm technology. A specimen containing only one contact plug was prepared in the shape of a pillar with a diameter of 200nm and a length of 5mum. Elemental maps were obtained from the pillar specimen using a 200-kV cold-field emission gun (FEG) STEM model HD-2300C equipped with the EDAX genesis X-ray energy-dispersive spectrometry (XEDS) system through a spectrum imaging technique. In this study, elemental distributions of minor elements with weak signals were enhanced by applying principal component analysis (PCA), which is a superior technique to extract weak signals from a large dataset. The distributions of elements, especially the metallization component Ti and minor dopant As in this particular device, were successfully extracted by PCA. Finally, the 3D elemental distributions around the contact plug could be visualized by reconstruction from the tilt series of maps.
RESUMEN
We reported investigation of lattice resolution imaging using a Hitachi SU9000 conventional in-lens type cold field emission scanning electron microscope without an aberration corrector at an accelerating voltage of 30kV and discuss the electron optics and optimization of observation conditions for obtaining lattice resolution. It is possible to visualize lattice spacings that are much smaller than the diameter of the incident electron beam through the influence of the superior coherent performance of the cold field emission electron source. The defocus difference between STEM imaging and lattice imaging is found to increase with spherical aberration but it is possible to reduce the spherical aberration by reducing the focal length (f) of the objective lens combined with an experimental sample stage enabling a shorter distance between the objective lens pre-field and the sample. We demonstrate that it is possible to observe the STEM image and crystalline lattice simultaneously. STEM and Fourier transform images are detected for Si{222} lattice fringes and reflection spots, corresponding to 0.157nm. These results reveal the potential and possibility for a measuring technique with excellent precision as a theoretically exact dimension and established the ability to perform high precision measurements of crystal lattices for the structural characterization of semiconductor materials with minimal radiation beam damage.
RESUMEN
Interaction between multi-walled carbon nanotubes (MWNTs) and deposited gold nano-particles has been dynamically observed in a 200 kV transmission electron microscope (TEM) using a specimen heating holder. Gold particles with diameters of several tens of microns were mixed with MWNTs to mount on the heating element of a specimen heating holder. The gold particles were instantaneously heated to 1373 K to deposit gold nano-particles on the MWNTs from a very short distance. The MWNTs were then heated to 1073 K to observe interaction between the deposited gold nano-particles and MWNTs. Some gold nano-particles drilled through the wall of the MWNT and entered the capillary space of the MWNTs. To characterize the mechanism of the transition of the gold nano-particles into the capillary space of the MWNT, high resolution TEM observation of the deformed wall of MWNT was also carried out.
RESUMEN
A new gas injection/specimen heating holder is developed for the purpose of in situ observation of gas reaction of materials at high temperatures in a transmission electron microscope at near-atomic resolution. A fine tungsten wire is employed as a heating element of the holder and a battery is used as the power source. Gas was injected onto specimens in the form of particles lying on the heating element via a nozzle. The maximum pressure near specimens was middle of 10(-2) Pa, while the pressure in the electron-gun chamber was kept to 2 x 10(-4) Pa. This gas injection/specimen heating holder was applied to observe solid-gas reactions. The reactions observed include oxidation of pure In into In2O3, reduction of SiO2 into Si and re-oxidation of Si into SiO2.
RESUMEN
A new technique has been developed for the three-dimensional structure characterisation of a specific site at atomic resolution. In this technique, a focused ion beam (FIB) system is used to extract a specimen from a desired site as well as to fabricate the electron transparent specimen. A specimen holder with a specimen stage rotation mechanism has also been developed for use with both an FIB system and a high-resolution transmission electron microscope (TEM). The specimen holder allows both the FIB milling of a specimen and its observation in TEM without remounting the specimen from the specimen holder. A specimen for the three-dimensional TEM observation is extracted using the FIB micro-sampling technique and shaped into a pillar to mount on a tip of a needle stub enabling a multidirectional observation. The technique was applied to the multidirectional observation of the crystal structure of an Si single crystal at atomic resolution. The crystal lattice fringes of the two Si(111) planes with distances of 0.31 nm as well as the lattice fringes of the Si(200) with distances of 0.19 nm were clearly observed.