Strongly Coupled Spin Waves and Surface Acoustic Waves at Room Temperature.

Here, we report the observation of strong coupling between magnons and surface acoustic wave (SAW) phonons in a thin CoFeB film constructed in an on-chip SAW resonator by analyzing SAW phonon dispersion anticrossings. We employ a nanostructured SAW resonator design that, in contrast to conventional SAW resonators, allows us to enhance shear-horizontal strain. Crucially, this type of strain couples strongly to magnons. Our device design provides the tunability of the film thickness with a fixed phonon wavelength, which is a departure from the conventional approach in strong magnon-phonon coupling research. We detect a monotonic increase in the coupling strength by expanding the film thickness, which agrees with our theoretical model. Our work offers a significant way to advance fundamental research and the development of devices based on magnon-phonon hybrid quasiparticles.

Valley-Selective Phonon-Magnon Scattering in Magnetoelastic Superlattices.

Phonons and magnons are engineered by periodic potential landscapes in phononic and magnonic crystals, and their combined studies may enable valley phonon transport tunable by the magnetic field. Through nonreciprocal surface acoustic wave transmission, we demonstrate valley-selective phonon-magnon scattering in magnetoelastic superlattices. The lattice symmetry and the out-of-plane magnetization component control the sign of nonreciprocity. The phonons in the valleys play a crucial role in generating nonreciprocal transmission by inducing circularly polarized strains that couple with the magnons. The transmission spectra show a nonreciprocity peak near a transmission gap, matching the phononic band structure. Our results open the way for manipulating valley phonon transport through periodically varying magnon-phonon coupling.

Observation of the antiferromagnetic spin Hall effect.

The discovery of the spin Hall effect1 enabled the efficient generation and manipulation of the spin current. More recently, the magnetic spin Hall effect2,3 was observed in non-collinear antiferromagnets, where the spin conservation is broken due to the non-collinear spin configuration. This provides a unique opportunity to control the spin current and relevant device performance with controllable magnetization. Here, we report a magnetic spin Hall effect in a collinear antiferromagnet, Mn2Au. The spin currents are generated at two spin sublattices with broken spatial symmetry, and the antiparallel antiferromagnetic moments play an important role. Therefore, we term this effect the 'antiferromagnetic spin Hall effect'. The out-of-plane spins from the antiferromagnetic spin Hall effect are favourable for the efficient switching of perpendicular magnetized devices, which is required for high-density applications. The antiferromagnetic spin Hall effect adds another twist to the atomic-level control of spin currents via the antiferromagnetic spin structure.

Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures.

Engineering the anomalous Hall effect (AHE) is the key to manipulate the magnetic orders in the emerging magnetic topological insulators (MTIs). In this letter, we synthesize the epitaxial Bi2Te3/MnTe magnetic heterostructures and observe pronounced AHE signals from both layers combined together. The evolution of the resulting hybrid AHE intensity with the top Bi2Te3 layer thickness manifests the presence of an intrinsic ferromagnetic phase induced by the topological surface states at the heterolayer interface. More importantly, by doping the Bi2Te3 layer with Sb, we are able to manipulate the sign of the Berry phase-associated AHE component. Our results demonstrate the unparalleled advantages of MTI heterostructures over magnetically doped TI counterparts in which the tunability of the AHE response can be greatly enhanced. This in turn unveils a new avenue for MTI heterostructure-based multifunctional applications.

Chiral Mesostructured NiO Films with Spin Polarisation.

Spin polarisation is found in the centrosymmetric nonferromagnetic crystals, chiral mesostructured NiO films (CMNFs), fabricated through the symmetry-breaking effect of a chiral molecule. Two levels of chirality were identified: primary nanoflakes with atomically twisted crystal lattices and secondary helical stacking of the nanoflakes. Spin polarisation of the CMNFs was confirmed by chirality-dependent magnetic-tip conducting atomic force microscopy (mc-AFM) and magnetic field-independent magnetic circular dichroism (MCD). Electron transfer in the symmetry-breaking electric field was speculated to create chirality-dependent effective magnetic fields. The asymmetric spin-orbit coupling (SOC) generated by effective magnetic fields selectively modifies the opposite spin motion in the antipodal CMNFs. Our findings provide fundamental insights for directional spin control in unprecedented functional inorganic materials.

Antiferromagnetic magnonic charge current generation via ultrafast optical excitation.

Néel spin-orbit torque allows a charge current pulse to efficiently manipulate the Néel vector in antiferromagnets, which offers a unique opportunity for ultrahigh density information storage with high speed. However, the reciprocal process of Néel spin-orbit torque, the generation of ultrafast charge current in antiferromagnets has not been demonstrated. Here, we show the experimental observation of charge current generation in antiferromagnetic metallic Mn2Au thin films using ultrafast optical excitation. The ultrafast laser pulse excites antiferromagnetic magnons, resulting in instantaneous non-equilibrium spin polarization at the antiferromagnetic spin sublattices with broken spatial symmetry. Then the charge current is generated directly via spin-orbit fields at the two sublattices, which is termed as the reciprocal phenomenon of Néel spin-orbit torque, and the associated THz emission can be detected at room temperature. Besides the fundamental significance on the Onsager reciprocity, the observed magnonic charge current generation in antiferromagnet would advance the development of antiferromagnetic THz emitter.

Nonreciprocal magnetoacoustic waves with out-of-plane phononic angular momenta.

Surface acoustic wave (SAW) can carry phononic angular momentum, showing great potential as an energy-efficient way to control magnetism. Still, out-of-plane phononic angular momentum in SAW and its interaction with magnetism remain elusive. Here, we studied the SAW-induced magnetoacoustic waves and spin pumping in Ni-based films on LiNbO3 with selected SAW propagation direction. The crystal inversion asymmetry induces circularly polarized phonons with large out-of-plane angular momenta so that up to 60% of the SAW power attenuates nonreciprocally controlled by the out-of-plane magnetization component. The SAW propagation direction dependence of the nonreciprocity verifies the crystal origin of the phononic angular momentum, and a chiral spin pumping demonstrates that the circular polarization can control the spin current generation efficiency. These results provide an additional degree of freedom for the acoustic control of magnetism and open an avenue for applying circularly polarized phonons.

Terahertz oscillation driven by optical spin-orbit torque.

Antiferromagnets are promising for nano-scale oscillator in a wide frequency range from gigahertz up to terahertz. Experimentally realizing antiferromagnetic moment oscillation via spin-orbit torque, however, remains elusive. Here, we demonstrate that the optical spin-orbit torque induced by circularly polarized laser can be used to drive free decaying oscillations with a frequency of 2 THz in metallic antiferromagnetic Mn2Au thin films. Due to the local inversion symmetry breaking of Mn2Au, ultrafast a.c. current is generated via spin-to-charge conversion, which can be detected through free-space terahertz emission. Both antiferromagnetic moments switching experiments and dynamics analyses unravel the antiferromagnetic moments, driven by optical spin-orbit torque, deviate from its equilibrium position, and oscillate back in 5 ps once optical spin-orbit torque is removed. Besides the fundamental significance, our finding opens a new route towards low-dissipation and controllable antiferromagnet-based spin-torque oscillators.

Spin-torque-driven antiferromagnetic resonance.

The intrinsic fast dynamics make antiferromagnetic spintronics a promising avenue for faster data processing. Ultrafast antiferromagnetic resonance-generated spin current provides valuable access to antiferromagnetic spin dynamics. However, the inverse effect, spin-torque-driven antiferromagnetic resonance (ST-AFMR), which is attractive for practical utilization of fast devices but seriously impeded by difficulties in controlling and detecting Néel vectors, remains elusive. We observe ST-AFMR in Y3Fe5O12/α-Fe2O3/Pt at room temperature. The Néel vector oscillates and contributes to voltage signal owing to antiferromagnetic negative spin Hall magnetoresistance-induced spin rectification effect, which has the opposite sign to ferromagnets. The Néel vector in antiferromagnetic α-Fe2O3 is strongly coupled to the magnetization in Y3Fe5O12 buffer, resulting in the convenient control of Néel vectors. ST-AFMR experiment is bolstered by micromagnetic simulations, where both the Néel vector and the canted moment of α-Fe2O3 are in elliptic resonance. These findings shed light on the spin current-induced dynamics in antiferromagnets and represent a step toward electrically controlled antiferromagnetic terahertz emitters.

Observation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures.

Magnetoresistance effects are crucial for understanding the charge-spin transport as well as propelling the advancement of spintronic applications. Here, we report the coexistence of magnetic-moment-dependent (MD) and magnetic-field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to different spin scattering mechanisms, these two types of non-reciprocal charge transports show opposite polarities with respect to the magnetic field direction, which further enables an effective phase modulation of the angular-dependent magnetoresistance. The demonstration of the tunable UMR response validates our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic memory and sensor designs.

Antiferromagnetic Inverse Spin Hall Effect.

The inverse spin Hall effect (ISHE) is one of the accessible and reliable methods to detect spin current. The magnetization-dependent inverse spin Hall effect has been observed in magnets, expanding the dimension for spin-to-charge conversion. However, antiferromagnetic Néel-vector-dependent ISHE, which has been long time highly pursued, is still elusive. Here, ISHE in Mn2 Au/[Co/Pd] heterostructures is investigated by terahertz emission and spin Seebeck effect measurements, where [Co/Pd] possesses perpendicular magnetic anisotropy for out-of-plane polarized spin current generation and Mn2 Au is a collinear antiferromagnet for the spin-to-charge conversion. The out-of-plane spin polarization (σz ) is rotated toward in-plane by the Néel vectors in Mn2 Au, then the spin current is converted into charge current at two staggered spin sublattices. The ISHE signal is much stronger when the converted charge current is parallel to the Néel vector compared with its orthogonal counterpart. The Néel vector and resultant ISHE signals, which is termed as antiferromagnetic inverse spin Hall effect, can be switched. The finding not only adds a new member to the Hall effect family, but also makes antiferromagnetic spintronics more flexible.

Orthogonal interlayer coupling in an all-antiferromagnetic junction.

In conventional ferromagnet/spacer/ferromagnet sandwiches, noncollinear couplings are commonly absent because of the low coupling energy and strong magnetization. For antiferromagnets (AFM), the small net moment can embody a low coupling energy as a sizable coupling field, however, such AFM sandwich structures have been scarcely explored. Here we demonstrate orthogonal interlayer coupling at room temperature in an all-antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the Néel vectors in the top and bottom Fe2O3 layers are strongly orthogonally coupled and the coupling strength is significantly affected by the thickness of the antiferromagnetic Cr2O3 spacer. From the energy and symmetry analysis, the direct coupling via uniform magnetic ordering in Cr2O3 spacer in our junction is excluded. The coupling is proposed to be mediated by the non-uniform domain wall state in the spacer. The strong long-range coupling in an antiferromagnetic junction provides an unexplored approach for designing antiferromagnetic structures and makes it a promising building block for antiferromagnetic devices.

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets.

Perpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.

Highly Efficient Electric-Field Control of Giant Rashba Spin-Orbit Coupling in Lattice-Matched InSb/CdTe Heterostructures.

Spin-orbit coupling (SOC), the relativistic effect describing the interaction between the orbital and spin degrees of freedom, provides an effective way to tailor the spin/magnetic orders using electrical means. Here, we report the manipulation of the spin-orbit interaction in the lattice-matched InSb/CdTe heterostructures. Owing to the energy band bending at the heterointerface, the strong Rashba effect is introduced to drive the spin precession where pronounced weak antilocalization cusps are observed up to 100 K. With effective quantum confinement and suppressed bulk conduction, the SOC strength is found to be enhanced by 75% in the ultrathin InSb/CdTe film. Most importantly, we realize the electric-field control of the interfacial Rashba effect using a field-effect transistor structure and demonstrate the gate-tuning capability which is 1-2 orders of magnitude higher than other materials. The adoption of the InSb/CdTe integration strategy may set up a general framework for the design of strongly spin-orbit coupled systems that are essential for CMOS-compatible low-power spintronics.

Tuning the magnetotransport behavior of topological insulator with a transition-metal oxide layer.

The interaction between topological insulator (TI) and its adjacent magnetic layer serves as a basis for exploring the device application of TI. Here we investigate the modulation of the magnetotransport behavior of Bi2Te3 TI with a transition-metal oxide layer NiO. It is found that the weak-antilocalization effect is absent at low magnetic fields and the magnetoresistance ratio decreases monotonically with increasing the NiO growth temperature from 300 to 473 K, indicating the suppression of the topological surface states of Bi2Te3. Such behaviors are attributed to the decomposition of NiO and the concomitant formation of magnetic impurities at the Bi2Te3/NiO interface. Differently, the weak-antilocalization shows no significant weakening with the growth of Cr2O3 top layer, due to its better chemical stability. Our observation would be significant for the material selection for the device integration of TI.

A meta-analysis of the association between CTLA-4 genetic polymorphism and susceptibility of asthma.

BACKGROUND: Numerous studies have reported an association between cytotoxic T-lymphocyte associated antigen 4 gene (CTLA4) polymorphism and susceptibility to asthma, in different populations, but the results have been inconsistent. We performed a meta-analysis of 19 published case-control studies to obtain a reasonably accurate estimation of the relationship between CTLA4 polymorphism and asthma. METHODS: We searched the Pubmed, EMBASE, Chinese National Knowledge Infrastructure, and Wanfang databases and extracted data from 19 independent, eligible studies. Odds ratios (ORs) with 95% confidence intervals (CIs) and Egger test were separately used to assess the strength of associations and publication bias. RESULTS: A total of 19 case-control studies involving 4831 cases and 4534 controls were identified. The combined results revealed that there was significant association between the +49A/G polymorphism and asthma (for GG + GA vs. AA: OR = 0.82, 95% CI = 0.70-0.97, P = .02). Stratification by race or age indicated a significant association between the CTLA-4 +49 GA+GG genotype and asthma in Asians (OR = 0.80, 95% CI = 0.68-0.95, P = .01) and children (OR = 0.75, 95% CI = 0.62-0.90, P = .002), but there was no association in whites (OR = 0.94, 95% CI = 0.80-1.10, P = .44) and adults (OR = 0.85, 95% CI = 0.68-1.06, P = .15). Additionally, there was a significant association with atopic asthma under the random-effects model (OR = 0.81, 95% CI = 0.67-0.98, P = .03). In addition, there was no significant association between the -318 C/T polymorphism and asthma risk. CONCLUSIONS: Our meta-analysis results suggested that the +49A/G polymorphism in CTLA-4 was an important risk factor for asthma susceptibility, especially in Asian individuals, children, and atopic patients.