RESUMEN
Light-emitting diodes (LEDs) are used widely, but when operated at a low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert it to an alternating current (AC). DC flow across devices also causes charge accumulation at a high current density, leading to lowered LED reliability. In contrast, gallium-nitride-based LEDs can be operated without an AC-DC converter being required, potentially leading to greater energy efficiency and reliability. In this study, we developed a multicolor AC-driven light-emitting device by integrating a WSe2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures. The CVD-grown WSe2 monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of these hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe2 monolayer was observed to boost the WSe2 monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity-voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag-WSe2 monolayer interface at low voltage, whereas Fowler-Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. These multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in applications such as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.
RESUMEN
The exploration of functional light-emitting devices and numerous optoelectronic applications can be accomplished on an elegant platform provided by rapidly developing transition metal dichalcogenides (TMDCs). However, TMDCs-based light emitting devices encounter certain serious difficulties, such as high resistance losses from ohmic contacts or the need for complex heterostructures, which restricts the device applications. Despite the fact that AC-driven light emitting devices have developed ways to overcome these challenges, there is still a significant demand for multiple wavelength emission from a single device, which is necessary for full color light emitting devices. Here, we developed a dual-color AC-driven light-emitting device by integrating the WSe2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures in the form of capacitor structure using AlOx insulating layer between the two emitters. In order to comprehend the characteristics of the hybrid device under various driving circumstances, we investigate the frequency-dependent EL intensity of the hybrid device using an equivalent RC circuit model. The time-resolved electroluminescence (TREL) characteristics of the hybrid device were analyzed in details to elucidate the underlying physical mechanisms governing its performance under varying applied frequencies. This dual-color hybrid light-emitting device enables the use of 2-D TMDC-based light emitters in a wider range of applications, including broad-band LEDs, quantum display systems, and chip-scale optoelectronic integrated systems.
RESUMEN
The circularly polarized light source is one of the keys to chiral photonic circuits and systems. However, it is difficult to integrate conventional light-emitting devices with circular polarization converters directly into compact chip-scale photonic systems partly because of their bulky structures. In this study, in situ optical chirality tunable nanorod trimer metasurfaces consisting of two types of nanorod dimers are demonstrated and integrated with a flexible polydimethylsiloxane (PDMS) substrate. The optical chirality variations originating from the tunable asymmetricity of nanorod trimers under different stretching scenarios are evaluated. Through the processes, the gap distances between nanorods are varied, and the degree of circular polarization of the transmitted wave is controlled through the manipulation of localized surface plasmon resonance (LSPR) coupling. The results reveal the circular dichroism tunability and durability of fabricated chiral metasurfaces which can be important elements for chip-scale flexible optoelectronic integrated circuits for sensing, display and communication applications.
RESUMEN
Two-dimensional materials, such as transition metal dichalogenides (TMDs), are emerging materials for optoelectronic applications due to their exceptional light-matter interaction characteristics. At room temperature, the coupling of excitons in monolayer TMDs with light opens up promising possibilities for realistic electronics. Controlling light-matter interactions could open up new possibilities for a variety of applications, and it could become a primary focus for mainstream nanophotonics. In this paper, we show how coupling can be achieved between excitons in the tungsten diselenide (WSe2) monolayer with band-edge resonance of one-dimensional (1-D) photonic crystal at room temperature. We achieved a Rabi splitting of 25.0 meV for the coupled system, indicating that the excitons in WSe2 and photons in 1-D photonic crystal were coupled successfully. In addition to this, controlling circularly polarized (CP) states of light is also important for the development of various applications in displays, quantum communications, polarization-tunable photon source, etc. TMDs are excellent chiroptical materials for CP photon emitters because of their intrinsic circular polarized light emissions. In this paper, we also demonstrate that integration between the TMDs and photonic crystal could help to manipulate the circular dichroism and hence the CP light emissions by enhancing the light-mater interaction. The degree of polarization of WSe2 was significantly enhanced through the coupling between excitons in WSe2 and the PhC resonant cavity mode. This coupled system could be used as a platform for manipulating polarized light states, which might be useful in optical information technology, chip-scale biosensing and various opto-valleytronic devices based on 2-D materials.
RESUMEN
In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown InxGa1-xN/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strong coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.
RESUMEN
We demonstrate a circularly polarized laser with the metal-gallium-nitride gammadion nanocavities. The ultraviolet lasing signal was observed with the high circular dichroism at room temperature under pulsed optical pump conditions. Without external magnetism which breaks the time-reversal symmetry to favor optical transitions of a chosen handedness, the coherent outputs of these chiral nanolasers show a dissymmetry factor as high as 1.1. The small footprint of these lasers are advantageous for applications related to circularly polarized photons in future integrated systems, in contrast to the bulky setup of linearly-polarized lasers and quarter-wave plates.
RESUMEN
The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114 K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.
RESUMEN
Triphenylamine (TPA) and 4,4'-dimethoxy-triphenylamine (TPAOMe) derivatives were successfully linked with two high-performance AIEgens, triphenylethylene (TPE) and benzo[ b]thiophene-1,1-dioxide (BTO), to obtain four aggregation-induced emission and electro-active materials, TPETPA, BTOTPA, TPETPAOMe, and BTOTPAOMe. The effects on photoluminescence characteristics and electrochromic (EC) and electrofluorochromic (EFC) behaviors in cross-linking gel-type devices derived from the prepared materials were systematically investigated. Furthermore, heptyl viologen was introduced into the EFC devices to enhance EC performance including lower working potential, faster switching time, and superior stability.
RESUMEN
Two novel triphenylamine-based derivatives with dimethylamino substituents, N, N'-bis(4-dimethylaminophenyl)- N, N'-bis(4-methoxyphenyl)-1,4-phenylenediamine (NTPPA) and N, N'-bis(4-dimethylaminophenyl)- N, N'-bis(4-methoxyphenyl)-1,1'-biphenyl-4,4'-diamine (NTPB), were readily prepared for investigating the optical and electrochromic behaviors. These two obtained materials were introduced into electrochromic devices accompanied with heptyl viologen (HV), and the devices demonstrate a high average coloration efficiency of 287 cm2/C and electrochemical stability. Besides, NTPB/HV was further used to fabricate electrofluorochromic devices with a gel type electrolyte, and exhibit a controllable and high photoluminescence contrast ratio ( Ioff/ Ion) of 32.12 from strong emission to truly dark by tuning the applied potential in addition to a short switching time of 4.9 s and high reversibility of 99% after 500 cycles.
RESUMEN
Atomically thin membranes of two-dimensional (2-D) transition-metal dichalcogenides (TMDCs) have distinct emission properties, which can be utilized for realizing ultrathin optoelectronic integrated systems in the future. Growing a large-area and strain-reduced monolayer 2-D material on a three-dimensional (3-D) substrate with microstructures or nanostructures is a crucial technique because the electronic band structure of TMDC atomic layers is strongly affected by the number of stacked layers and strain. In this study, a large-area and strain-reduced MoS2 monolayer was fabricated on a 3-D substrate through a two-step growth procedure. The material characteristics and optical properties of monolayer TMDCs fabricated on the nonplanar substrate were examined. The growth of monolayer MoS2 on a cone-shaped sapphire substrate effectively reduced the tensile strain induced by the substrate by decreasing the thermal expansion mismatch between the 2-D material and the substrate. Monolayer MoS2 grown on the nonplanar substrate exhibited uniform strain reduction and luminescence intensity. The fabrication of monolayer MoS2 on a nonplanar substrate increased the light extraction efficiency. In the future, large-area and strain-reduced 2-D TMDC materials grown on a nonplanar substrate can be employed as novel light-emitting devices for applications in lighting, communication, and displays for the development of ultrathin optoelectronic integrated systems.
RESUMEN
The small sized, flexible, high-performed and bio-compatible sensing devices are the critical elements to realize the bio-related detection or on-site health monitoring systems. In this work, the flexible localized surface plasmon resonance (LSPR) bio-sensors were demonstrated by integrating the metal-insulator-metal (MIM) nanodisks with bio-compatible polydimethylsiloxane (PDMS) substrate. The different geometries of MIM nanodisk sensors were investigated and optimized to enhance the spatial overlap of the LSPR waves with the environment, which lead to a high sensitivity of 1500 nm/RIU. The omni-directional characteristics of LSPR resonances were beneficial for maintaining the device sensitivity stable under various bending curvatures. Furthermore, the flexible MIM nanodisk LSPR sensor was applied to detect A549 cancer cells in PBS+ solution. The absorption peak of the MIM-disk LSPR sensor obviously redshift to easily distinguish between the phosphate buffered saline (PBS+) solution with A549 cancer cells and without cells. Therefore, the flexible MIM nanodisk LSPR sensor is suitable to develop on-chip microfluidic biosensors for detection of cancer cells on nonplanar surfaces.
RESUMEN
Controlling circularly polarized (CP) states of light is critical to the development of functional devices for key and emerging applications such as display technology and quantum communication, and the compact circular polarization-tunable photon source is one critical element to realize the applications in the chip-scale integrated system. The atomic layers of transition metal dichalcogenides (TMDCs) exhibit intrinsic CP emissions and are potential chiroptical materials for ultrathin CP photon sources. In this work, we demonstrated CP photon sources of TMDCs with device thicknesses approximately 50 nm. CP photoluminescence from the atomic layers of tungsten diselenide (WSe2) was precisely controlled with chiral metamolecules (MMs), and the optical chirality of WSe2 was enhanced more than 4 times by integrating with the MMs. Both the enhanced and reversed circular dichroisms had been achieved. Through integrations of the novel gain material and plasmonic structure which are both low-dimensional, a compact device capable of efficiently manipulating emissions of CP photon was realized. These ultrathin devices are suitable for important applications such as the optical information technology and chip-scale biosensing.