1.
Adv Mater
; 27(33): 4845-50, 2015 Sep 02.
Artículo
en Inglés
| MEDLINE
| ID: mdl-26178685
RESUMEN
Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.