RESUMEN
The spin structure of the valence and conduction bands at the K[over ¯] and K[over ¯]^{'} valleys of single-layer WS_{2} on Au(111) is determined by spin- and angle-resolved photoemission and inverse photoemission. The bands confining the direct band gap of 1.98 eV are out-of-plane spin polarized with spin-dependent energy splittings of 417 meV in the valence band and 16 meV in the conduction band. The sequence of the spin-split bands is the same in the valence and in the conduction bands and opposite at the K[over ¯] and the K[over ¯]^{'} high-symmetry points. The first observation explains "dark" excitons discussed in optical experiments; the latter points to coupled spin and valley physics in electron transport. The experimentally observed band dispersions are discussed along with band structure calculations for a freestanding single layer and for a single layer on Au(111).
RESUMEN
In this work we prove that ordered single-layer MoS2 can be grown epitaxially on Ag(110), despite the different crystalline geometry of adsorbate and substrate. A comprehensive investigation of electronic and structural features of this interface is carried out by combining several techniques. Photoelectron diffraction experiments show that only two mirror crystalline domains coexist in equal amount in the grown layer. Angle-resolved valence band photoelectron spectroscopy shows that MoS2 undergoes a semiconductor-to-metal transition. Low-energy electron diffraction and scanning-tunneling microscopy experiments reveal the formation of a commensurate moiré superlattice at the interface, which implies an anisotropic uniaxial strain of the MoS2 crystalline lattice of ca. 3% in the [11Ì0] direction of the Ag(110) surface. These outcomes suggest that the epitaxial growth on anisotropic substrates might be an effective and scalable method to generate a controlled and homogeneous strain in MoS2 and possibly other transition-metal dichalcogenides.
RESUMEN
Despite the ideal performance demonstrated by mixed perovskite materials when used as active layers in photovoltaic devices, the factor which still hampers their use in real life remains the poor stability of their physico-chemical and functional properties when submitted to prolonged permanence in atmosphere, exposure to light and/or to moderately high temperature. We used high resolution photoelectron spectroscopy to compare the chemical state of triple cation, double halide Csx(FA0.83MA0.17)(1-x)Pb(I0.83Br0.17)3 perovskite thin films being freshly deposited or kept for one month in the dark or in the light in environmental conditions. Important deviations from the nominal composition were found in the samples aged in the dark, which, however, did not show evident signs of oxidation and basically preserved their own electronic structures. Ageing in the light determined a dramatic material deterioration with heavily perturbed chemical composition also due to reactions of the perovskite components with surface contaminants, promoted by the exposure to visible radiation. We also investigated the implications that 2D MXene flakes, recently identified as effective perovskite additive to improve solar cell efficiency, might have on the labile resilience of the material to external agents. Our results exclude any deleterious MXene influence on the perovskite stability and, actually, might evidence a mild stabilizing effect for the fresh samples, which, if doped, exhibited a lower deviation from the expected stoichiometry with respect to the undoped sample. The evolution of the undoped perovskites under thermal stress was studied by heating the samples in UHV while monitoring in real time, simultaneously, the behaviour of four representative material elements. Moreover, we could reveal the occurrence of fast changes induced in the fresh material by the photon beam as well as the enhanced decomposition triggered by the concurrent X-ray irradiation and thermal heating.
RESUMEN
MXenes are a young family of two-dimensional transition metal carbides, nitrides, and carbonitrides with highly controllable structure, composition, and surface chemistry to adjust for target applications. Here, we demonstrate the modifications of two-dimensional MXenes by low-energy ion implantation, leading to the incorporation of Mn ions in Ti3C2Tx (where Tx is a surface termination) thin films. Damage and structural defects caused by the implantation process are characterized at different depths by XPS on Ti 2p core-level spectra, by ToF-SIMS, and with electron energy loss spectroscopy analyses. Results show that the ion-induced alteration of the damage tolerant Ti3C2Tx layer is due to defect formation at both Ti and C sites, thereby promoting the functionalization of these sites with oxygen groups. This work contributes to the inspiring approach of tailoring 2D MXene structure and properties through doping and defect formation by low-energy ion implantation to expand their practical applications.
RESUMEN
Carbon layers are deposited on 100 nm thick atomically clean (001) lead zirconate titanate (PZT) in ultrahigh vacuum, ruling out the presence of any contaminants. X-ray photoelectron spectroscopy is used to assess the substrate surface or interface composition, substrate polarization and the thickness of carbon layers, which ranges from less than one monolayer (1 ML) of graphene to several monolayers. Atomically clean PZT(001) exhibit inwards polarization, and this polarization reverses the sign upon carbon deposition. Cationic vacancies are detected near the PZT surface, consistent with heavy p doping of these films near the surface. The carbon layers exhibited a consistent proportion of atoms forming in-plane sp2 bonds, as detected by near-edge absorption fine structure (NEXAFS) analysis and confirmed partially by scanning tunneling microscopy (STM). In situ poling with simultaneous in-plane transport measurements revealed the presence of resistance anti-hysteresis versus the polarization orientation for films with less than 1 ML carbon amount, evolving towards 'normal' hysteresis for thicker carbon films. The anti-hysteresis is explained in terms of a mixed screening mechanism, involving charge carriers from the sp2 carbon layers together with holes or ionized acceptors in PZT(001) near the interface. For thicker films, the compensation mechanism becomes extrinsic, involving mostly electrons and holes from carbon, yielding the expected hysteresis.
RESUMEN
Nanostructured architectures based on graphene/metal interfaces might be efficiently exploited in hydrogen storage due to the attractive capability to provide adsorption sites both at the top side of graphene and at the metal substrate after intercalation. We combined in situ high-resolution X-ray photoelectron spectroscopy and scanning tunneling microscopy with theoretical calculations to determine the arrangement of hydrogen atoms at the graphene/Ni(111) interface at room temperature. Our results show that at low coverage H atoms predominantly adsorb as monomers and that chemisorption saturates when â¼25% of the surface is hydrogenated. In parallel, with a much lower rate, H atoms intercalate below graphene and bind to Ni surface sites. Intercalation progressively destabilizes the C-H bonds and triggers the release of the hydrogen chemisorbed on graphene. Valence band and near-edge absorption spectroscopy demonstrate that the graphene layer is fully lifted when the Ni surface is saturated with H. Thermal programmed desorption was used to determine the stability of the hydrogenated interface. Whereas the H atoms chemisorbed on graphene remain unperturbed over a wide temperature range, the intercalated phase abruptly desorbs 50-100 K above room temperature.