RESUMEN
This study presents a facile synthesis of cadmium-free ternary and quaternary quantum dots (QDs) and their application to light-emitting diode (LED) devices. AgInS2 ternary QDs, developed as a substitute for cadmium chalcogenide QDs, exhibited spectrally broad photoluminescence due to intrinsic defect levels. Our group has successfully achieved narrow band-edge PL by a coating with gallium sulfide shell. Subsequently, an intrinsic difficulty in the synthesis of multinary compound QDs, which often results in unnecessary byproducts, was surmounted by a new approach involving the nucleation of silver sulfide followed by material conversion to the intended composition (silver indium gallium sulfide). By fine-tuning this reaction and bringing the starting material closer to stoichiometric compositional ratios, atom economy was further improved. These QDs have been tested in LED applications, but the standard device encountered a significant defective emission that would have been eliminated by the gallium sulfide shells. This problem is addressed by introducing gallium oxide as a new electron transport layer.
RESUMEN
Narrowing the emission peak width and adjusting the peak position play a key role in the chromaticity and color accuracy of display devices with the use of quantum dot light-emitting diodes (QD-LEDs). In this study, we developed multinary Cu-In-Ga-S (CIGS) QDs showing a narrow photoluminescence (PL) peak by controlling the Cu fraction, i.e., Cu/(In+Ga), and the ratio of In to Ga composing the QDs. The energy gap of CIGS QDs was enlarged from 1.74 to 2.77 eV with a decrease in the In/(In+Ga) ratio from 1.0 to 0. The PL intensity was remarkably dependent on the Cu fraction, and the PL peak width was dependent on the In/(In+Ga) ratio. The sharpest PL peak at 668 nm with a full width at half maximum (fwhm) of 0.23 eV was obtained for CIGS QDs prepared with ratios of Cu/(In+Ga) = 0.3 and In/(In+Ga) = 0.7, being much narrower than those previously reported with CIGS QDs, fwhm of >0.4 eV. The PL quantum yield of CIGS QDs, 8.3%, was increased to 27% and 46% without a PL peak broadening by surface coating with GaSx and Ga-Zn-S shells, respectively. Considering a large Stokes shift of >0.5 eV and the predominant PL decay component of â¼200-400 ns, the narrow PL peak was assignable to the emission from intragap states. QD-LEDs fabricated with CIGS QDs surface-coated with GaSx shells showed a red color with a narrow emission peak at 688 nm with a fwhm of 0.24 eV.
RESUMEN
Quantum dots (QDs), which have high color purity, are expected to be applied as emitting materials to wide-color-gamut displays. To enable their use as an alternative to Cd-based QDs, it is necessary to improve the properties of QDs composed of low-toxicity materials. Although multielement QDs such as Ag-In-Ga-S are prone to spectrally broad emission from defect sites, a core/shell structure covered with a GaSx shell is expected to enable sharp emission from band-edge transitions. Here, QD light-emitting diodes (QD-LEDs) embedded with Ag-In-Ga-S/GaSx core/shell QDs (AIGS QDs) were fabricated, and their electroluminescence (EL) was observed. The EL spectra from the AIGS QD-LEDs were found to contain a large defect-related emission component not observed in the photoluminescence (PL) spectra of the AIGS QD films. This defect-related emission was caused by electrons injected into defect sites in the QDs. Therefore, the AIGS QDs and the electron injection layer (EIL) of ZnMgO were treated with Ga compounds such as gallium chloride (GaCl3) and gallium tris(N,N'-diethyldithiocarbamate) (Ga(DDTC)3) to improve the luminescence properties of the QD-LEDs. The added Ga compounds effectively compensated for defect sites on the surface of the QDs and suppressed direct electron injection from the EIL into defect sites. As a result, the defect-related emission components in the EL were successfully suppressed, and the EL exhibited a color purity comparable to the PL of the AIGS QD films. The QD-LEDs exhibited EL spectra with a full width at half-maximum of 33 nm, which is extremely sharp for a low-toxicity QD, and the chromaticity coordinates (0.260, 0.695) for green EL were achieved.
RESUMEN
I-III-VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag-In-Ga-S (AIGS) QDs incorporated in a Ga2O3 matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission. The PL quantum yield (QY) of such QDs was 58%, being much higher than that of AIGS QDs without Na+ doping, 29%. The obtained Na-doped AIGS/Ga2O3 composite particles were used as an emitting layer of green QD light-emitted diodes. A sharp electroluminescence (EL) peak was observed at 563 nm, being similar to that in the PL spectrum of the QDs used. The external quantum efficiency of the device was 0.6%.
RESUMEN
Although organic light-emitting diodes (OLEDs) are promising for use in applications such as in flexible displays, reports of long-lived flexible OLED-based devices are limited due to the poor environmental stability of OLEDs. Flexible substrates such as plastic allow ambient oxygen and moisture to permeate into devices, which degrades the alkali metals used for the electron-injection layer in conventional OLEDs (cOLEDs). Here, the fabrication of a long-lived flexible display is reported using efficient and stable inverted OLEDs (iOLEDs), in which electrons can be effectively injected without the use of alkali metals. The flexible display employing iOLEDs can emit light for over 1 year with simplified encapsulation, whereas a flexible display employing cOLEDs exhibits almost no luminescence after only 21 d with the same encapsulation. These results demonstrate the great potential of iOLEDs to replace cOLEDs employing alkali metals for use in a wide variety of flexible organic optoelectronic devices.