RESUMEN
Y-doping can effectively improve the performance of HfOx-based resistive random-access memory (RRAM) devices, but the underlying physical mechanism of Y-doping affecting the performance of HfOx-based memristors is still missing and unclear. Although impedance spectroscopy (IS) has been widely used to investigate impedance characteristics and switching mechanisms of RRAM devices, there is less IS analysis on Y-doped HfOx-based RRAM devices as well as devices at different temperatures. Here, the effect of Y-doping on the switching mechanism of HfOx-based RRAM devices with a Ti/HfOx/Pt structure were reported using current-voltage characteristics and IS. The results indicated that doping Y into HfOxfilms could decrease the forming/operate voltage and improve the RS uniform. Both doped and undoped HfOx-based RRAM devices obeyed the oxygen vacancies (VO) conductive filament model along the grain boundary (GB). Additionally, the GB resistive activation energy of the Y-doped device was inferior to that of the undoped device. It exhibited a shift of theVOtrap level towards the conduction band bottom after Y-doping in the HfOxfilm, which was the main reason for the improved RS performance.
RESUMEN
We investigated the effect of nitrogen-hydrogen (NH) mixed plasma pretreatment of 4H-SiC surfaces on SiC surface properties, SiO2/SiC interface quality, and the reliability and voltage stability of metal-oxide-semiconductor (MOS) capacitors. The NH plasma pretreatment decreased the incomplete oxide and contaminants on the SiC surface and reduced the density of SiO2/SiC interface traps. Compared with the untreated sample, the dielectric insulating characteristics and reliability of samples pretreated by NH plasma were improved. We also demonstrated that the shift/hysteresis of the flat band voltage (Vfb) and the midgap voltage (Vmg) induced by bias temperature stress for SiC MOS capacitors after NH plasma pretreatment was significantly decreased. Furthermore, the mechanisms of NH plasma pretreatment to improve interface properties and device performances were determined by combining secondary ion mass spectrometry (SIMS) measurements, X-ray photoelectron spectroscopy (XPS), and first-principles calculations. The result indicates that the excessive oxidation at the SiO2/SiC interface was limited due to the reduction in the diffusion of oxygen atoms into SiC caused by the surface Si-H and Si-N; NH plasma pretreatment suppressed the generation of interfacial traps by reducing surface pollutants and passivating surface defects, and some N atoms introduced into the SiO2/SiC interface effectively passivated the interfacial electroactive traps.