RESUMEN
Grain rotation is commonly observed during the evolution of microstructures in polycrystalline materials of different kinds, including metals, ceramics, and colloidal crystals. It is widely accepted that interface migration in these systems is mediated by the motion of line defects with step and dislocation character, i.e., disconnections. We propose a crystallography-respecting continuum model for arbitrarily curved grain boundaries or heterophase interfaces, accounting for the disconnections' role in grain rotation. Numerical simulations demonstrate that changes in grain orientations, as well as interface morphology and internal stress field, are associated with disconnection flow. Our predictions agree with molecular dynamics simulation results for pure capillarity-driven evolution of grain boundaries and are interpreted through an extended Cahn-Taylor model.
RESUMEN
We demonstrate that grain boundaries (GBs) behave as Brownian ratchets, exhibiting direction-dependent mobilities and unidirectional motion under oscillatory driving forces or cyclic thermal annealing. We observed these phenomena for nearly all nonsymmetric GBs but not for symmetric ones. Our observations build on molecular dynamics and phase-field crystal simulations for a wide range of GB types and driving forces in both bicrystal and polycrystalline microstructures. We corroborate these simulation results through in situ experimental observations. We analyze these results with a Markov chain model and explore the implications of GB ratchet behavior for materials processing and microstructure tailoring.
RESUMEN
Near-rigid-body grain rotation is commonly observed during grain growth, recrystallization, and plastic deformation in nanocrystalline materials. Despite decades of research, the dominant mechanisms underlying grain rotation remain enigmatic. We present direct evidence that grain rotation occurs through the motion of disconnections (line defects with step and dislocation character) along grain boundaries in platinum thin films. State-of-the-art in situ four-dimensional scanning transmission electron microscopy (4D-STEM) observations reveal the statistical correlation between grain rotation and grain growth or shrinkage. This correlation arises from shear-coupled grain boundary migration, which occurs through the motion of disconnections, as demonstrated by in situ high-angle annular dark-field STEM observations and the atomistic simulation-aided analysis. These findings provide quantitative insights into the structural dynamics of nanocrystalline materials.