Rethinking the Characterization of Nanoscale Field-Effect Transistors: A Universal Approach.

Standard methods for calculating transport parameters in nanoscale field-effect transistors (FETs), namely carrier concentration and mobility, require a linear connection between the gate voltage and channel conductance; however, this is often not the case. One reason often overlooked is that shifts in chemical and electric potential can partially compensate each other, commonly referred to as quantum capacitance. In nanoscale FETs, capacitance is often unmeasurable and an analytical formula is required, which assumes the conducting channel as metallic and common methods of determining threshold voltage no longer couple properly into transport equations. As present and future FET structures become smaller and have increased channel-gate coupling, this issue will render standard methods impossible to use. This work discusses the validity of common methods of characterization for nanoscale FETs, develops a universal model to determine transport properties by only measuring the threshold voltage of an FET and presents a new parameter to easily classify FETs as either quantum capacitance-limited or metallic approximated charge transport. Also considered in this work is electrical hysteresis from trap states and, in combination with the proposed universal model, novel techniques are introduced to measure and remove the errors associated with these effects often ignored in literature.

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires.

Characterizing point defects that produce deep states in nanostructures is imperative when designing next-generation electronic and optoelectronic devices. Light emission and carrier transport properties are strongly influenced by the energy position and concentration of such states. The primary objective of this work is to fingerprint the electronic structure by characterizing the deep levels using a combined optical and electronic characterization, considering ZnSe nanowires as an example. Specifically, we use low temperature photoluminescence spectroscopy to identify the dominant recombination mechanisms and determine the total defect concentration. The carrier concentration and mobility are then calculated from electron transport measurements using single nanowire field effect transistors, and the measured experimental data were used to construct a model describing the types, energies, and ionized fraction of defects and calculate the deviation from stoichiometry. This metrology is hence demonstrated to provide an unambiguous means to determine a material's electronic structure.

Enhancement of transport properties in single ZnSe nanowire field-effect transistors.

Wide-gap semiconductors are excellent candidates for next-generation optoelectronic devices, including tunable emitters and detectors. ZnSe nanowire-based devices show great promise in blue emission applications, since they can be easily and reproducibly fabricated. However, their utility is limited by deep level defect states that inhibit optoelectronic device performance. The primary objective of this work is to show how the performance of ZnSe nanowire devices improves when nanowires are subjected to a post-growth anneal treatment in a zinc-rich atmosphere. We use low temperature photoluminescence spectroscopy to determine the primary recombination mechanisms and associated defect states. We then characterize the electronic properties of ZnSe nanowire field effect transistors fabricated from both as-grown and Zn-annealed nanowires, and measure an order-of-magnitude improvement to the electrical conductivity and mobility after the annealing treatment. We show that annealing reduces the concentration of zinc vacancies, which are responsible for strong compensation and high amounts of scattering in the as-grown nanowires.

Surface State Dynamics Dictating Transport in InAs Nanowires.

Because of their high aspect ratio, nanostructures are particularly susceptible to effects from surfaces such as slow electron trapping by surface states. However, nonequilibrium trapping dynamics have been largely overlooked when considering transport in nanoelectronic devices. In this study, we demonstrate the profound influence of dynamic trapping processes on transport in InAs nanowires through an investigation of the hysteretic and time-dependent behavior of the transconductance. We observe large densities (∼1013 cm-2) of slow surface traps and demonstrate the ability to control and permanently fix their occupation and charge through electrostatic manipulation by the gate potential followed by thermal deactivation by cryogenic cooling. Furthermore, we observe a transition from enhancement- to depletion-mode and a 400% change in field-effect mobility within the same device when the initial gate voltage and sweep rate are varied, revealing the severe impact of electrostatic history and dynamics on InAs nanowire field-effect transistors. A time-dependent model for nanowire transconductance based on nonequilibrium carrier population dynamics with thermally activated capture and emission was constructed and showed excellent agreement with experiments, confirming the effects to be a direct result of the dynamics of slow surface traps characterized by large thermal activation barriers (∼ 700 meV). This work reveals a clear and direct link between the electrical conductivity and the microscopic interactions of charged species with nanowire surfaces and highlights the necessity for considering dynamic properties of surface states in nanoelectronic devices.

Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.

Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creating high performance sensors that can be used in applications such as point-of-care testing for patients diagnosed with chronic diseases. Here, we propose devices based on a parallel configuration of InAs nanowires and investigate sensor responses from measurements of conductance over time and FET characteristics. The devices were tested in controlled concentrations of vapour containing acetic acid, 2-butanone and methanol. After adsorption of analyte molecules, trends in the transient current and transfer curves are correlated with the nature of the surface interaction. Specifically, we observed proportionality between acetic acid concentration and relative conductance change, off current and surface charge density extracted from subthreshold behaviour. We suggest the origin of the sensing response to acetic acid as a two-part, reversible acid-base and redox reaction between acetic acid, InAs and its native oxide that forms slow, donor-like states at the nanowire surface. We further describe a simple model that is able to distinguish the occurrence of physical versus chemical adsorption by comparing the values of the extracted surface charge density. These studies demonstrate that InAs nanowires can produce a multitude of sensor responses for the purpose of developing next generation, multi-dimensional sensor applications.

Surface Properties from Transconductance in Nanoscale Systems.

Because of the continued scaling of transistor dimensions and incorporation of nanostructured materials into modern electronic and optoelectronic devices, surfaces and interfaces have become a dominant factor dictating material properties and device performance. In this study, we investigate the temperature-dependent electronic transport properties of InAs nanowire field-effect transistors. A point where the nanowire conductance becomes independent of temperature is observed, known as the zero-temperature-coefficient. The distribution of surface states is determined by a spectral analysis of the conductance activation energy and used to develop a carrier transport model that explains the existence and gate voltage dependence of this point. We determine that the position of this point in gate voltage is directly related to the fixed oxide charge on the nanowire surface and demonstrate the utility of this method for studying surface passivations in nanoscale systems by characterizing (NH4)2Sx and H2 plasma surface treatments on InAs nanowires.

Crystal lattice determination of ZnSe nanowires with polarization-dependent second harmonic generation microscopy.

We demonstrate a noninvasive optical microscopy technique based on polarization-dependent second harmonic generation for determining the crystal lattice structure and microscopic heterogeneities within individual nanostructures. Differentiation between periodically twinned and wurtzite ZnSe nanowires (NWs) was demonstrated, and measurement of the cubic lattice rotation orientation around the NW axis was determined within 1° accuracy. Zinc blende NWs were differentiated from wurtzite. The technique can be used for quality inspection and optimization of growth conditions for nanostructures.

Electron states in semiconductor quantum dots.

In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

Mechanisms of Action in FLASH Radiotherapy: A Comprehensive Review of Physicochemical and Biological Processes on Cancerous and Normal Cells.

The advent of FLASH radiotherapy (FLASH-RT) has brought forth a paradigm shift in cancer treatment, showcasing remarkable normal cell sparing effects with ultra-high dose rates (>40 Gy/s). This review delves into the multifaceted mechanisms underpinning the efficacy of FLASH effect, examining both physicochemical and biological hypotheses in cell biophysics. The physicochemical process encompasses oxygen depletion, reactive oxygen species, and free radical recombination. In parallel, the biological process explores the FLASH effect on the immune system and on blood vessels in treatment sites such as the brain, lung, gastrointestinal tract, skin, and subcutaneous tissue. This review investigated the selective targeting of cancer cells and the modulation of the tumor microenvironment through FLASH-RT. Examining these mechanisms, we explore the implications and challenges of integrating FLASH-RT into cancer treatment. The potential to spare normal cells, boost the immune response, and modify the tumor vasculature offers new therapeutic strategies. Despite progress in understanding FLASH-RT, this review highlights knowledge gaps, emphasizing the need for further research to optimize its clinical applications. The synthesis of physicochemical and biological insights serves as a comprehensive resource for cell biology, molecular biology, and biophysics researchers and clinicians navigating the evolution of FLASH-RT in cancer therapy.

Impact of Scattering Foil Composition on Electron Energy Distribution in a Clinical Linear Accelerator Modified for FLASH Radiotherapy: A Monte Carlo Study.

This study investigates how scattering foil materials and sampling holder placement affect electron energy distribution in electron beams from a modified medical linear accelerator for FLASH radiotherapy. We analyze electron energy spectra at various positions-ionization chamber, mirror, and jaw-to evaluate the impact of Cu, Pb-Cu, Pb, and Ta foils. Our findings show that close proximity to the source intensifies the dependence of electron energy distribution on foil material, enabling precise beam control through material selection. Monte Carlo simulations are effective for designing foils to achieve desired energy distributions. Moving the sampling holder farther from the source reduces foil material influence, promoting more uniform energy spreads, particularly in the 0.5-10 MeV range for 12 MeV electron beams. These insights emphasize the critical role of tailored material selection and sampling holder positioning in optimizing electron energy distribution and fluence intensity for FLASH radiotherapy research, benefiting both experimental design and clinical applications.

Unambiguous identification of recombination lines in single zinc-blende ZnSe nanowires in direct relation to their microstructure.

We present results on the low-temperature photoluminescence characterization of individual ZnSe nanowires, whose crystal structure was determined to be zinc-blende by transmission electron microscopy on the same individual nanowires as were studied optically. The photoluminescence response from single ZnSe nanowires was found to be dominated by excitonic emission due to native point defects, while no emission peaks related to the unintentional impurities were detected. Two strong photoluminescence lines were observed at 2.785 eV and 2.780 eV, assigned to the excitons bound to deep neutral acceptors related to the vacancies of Zn (V(Zn)) and complexes of V(Zn), respectively. Another recombination peak at 2.800 eV related to the free exciton emission in ZnSe was also observed. Longitudinal optical-phonon replicas of up to three orders were seen for both lines, and the average number of emitted phonons was also determined. The excitonic emission linewidths of 1.5 meV were observed from individual nanowires, which are the narrowest excitonic linewidths reported so far for ZnSe nanowires. The optical response from a single nanowire was also compared to that from a bundle of nanowires, and it was found that the linewidths of excitonic emission from the bundle of nanowires were slightly larger than those from single nanowires, due to the effects of ensemble broadening. It is also suggested that in the case of a bundle of nanowires, the broadening is limited by the nanowire which exhibits the largest excitonic linewidth.

FLASH Radiotherapy and the Use of Radiation Dosimeters.

Radiotherapy (RT) using ultra-high dose rate (UHDR) radiation, known as FLASH RT, has shown promising results in reducing normal tissue toxicity while maintaining tumor control. However, implementing FLASH RT in clinical settings presents technical challenges, including limited depth penetration and complex treatment planning. Monte Carlo (MC) simulation is a valuable tool for dose calculation in RT and has been investigated for optimizing FLASH RT. Various MC codes, such as EGSnrc, DOSXYZnrc, and Geant4, have been used to simulate dose distributions and optimize treatment plans. Accurate dosimetry is essential for FLASH RT, and radiation detectors play a crucial role in measuring dose delivery. Solid-state detectors, including diamond detectors such as microDiamond, have demonstrated linear responses and good agreement with reference detectors in UHDR and ultra-high dose per pulse (UHDPP) ranges. Ionization chambers are commonly used for dose measurement, and advancements have been made to address their response nonlinearities at UHDPP. Studies have proposed new calculation methods and empirical models for ion recombination in ionization chambers to improve their accuracy in FLASH RT. Additionally, strip-segmented ionization chamber arrays have shown potential for the experimental measurement of dose rate distribution in proton pencil beam scanning. Radiochromic films, such as GafchromicTM EBT3, have been used for absolute dose measurement and to validate MC simulation results in high-energy X-rays, triggering the FLASH effect. These films have been utilized to characterize ionization chambers and measure off-axis and depth dose distributions in FLASH RT. In conclusion, MC simulation provides accurate dose calculation and optimization for FLASH RT, while radiation detectors, including diamond detectors, ionization chambers, and radiochromic films, offer valuable tools for dosimetry in UHDR environments. Further research is needed to refine treatment planning techniques and improve detector performance to facilitate the widespread implementation of FLASH RT, potentially revolutionizing cancer treatment.

Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions.

P-i-n junctions were fabricated along Si nanowires (SiNWs) via the conventional top-down approach using optical lithography. Each device comprises 500 identical SiNWs connected in parallel, and each SiNW has triangular cross-section with dimensions of ~6 nm (base) by ~8 nm (height). The photodiodes exhibit very good rectifying electrical characteristics with a low reverse bias current of ~0.2 fA per SiNW. The photocurrent spectral response exhibits three peaks between 400 nm to 700 nm, which arise due to local optical field enhancement associated with diffraction by the periodic SiNW array and interference in an air/SiO2/Si cavity.

Nonlinear Chemical Sensitivity Enhancement of Nanowires in the Ultralow Concentration Regime.

Much recent attention has been focused on the development of field-effect transistors based on low-dimensional nanostructures for the detection and manipulation of molecules. Because of their extraordinarily high charge sensitivity, InAs nanowires present an excellent material system in which to probe and study the behavior of molecules on their surfaces and elucidate the underlying mechanisms dictating the sensor response. So far, chemical sensors have relied on slow, activated processes restricting their applicability to high temperatures and macroscopic adsorbate coverages. Here, we identify the transition into a highly sensitive regime of chemical sensing at ultralow concentrations (<1 ppm) via physisorption at room temperature using field-effect transistors with channels composed of several thousand InAs nanowires and ethanol as a simple analyte molecule. In this regime, the nanowire conductivity is dictated by a local gating effect from individual dipoles, leading to a nonlinear enhancement of the sensitivity. At higher concentrations (>1 ppm), the nanowire channel is globally gated by a uniform dipole layer at the nanowire surface. The former leads to a dramatic increase in sensitivity due to weakened screening and the one-dimensional geometry of the nanowire. In this regime, we detect concentrations of ethanol vapor as low as 10 ppb, 100 times below the lowest concentrations previously reported. Furthermore, we demonstrate electrostatic control of the sensitivity and dynamic range of the InAs nanowire-based sensor and construct a unified model that accurately describes and predicts the sensor response over the tested concentration range (10 ppb to 10 ppm).

The influence of material absorption on the quality factor of photonic crystal cavities.

Accounting for material absorption is very important for developing high quality factor (Q) photonic crystal cavities. However, to our knowledge, there have been very few systematic experimental investigations of its role in such cavities. In this paper, we present detailed experiments to reveal the relationship between Q, material absorption coefficient and field pattern. Modes with different field patterns and materials with different absorption coefficients were tested. We have developed a simple formula to describe the relationship, which can be used to replace time-consuming numerical calculations. The experimental and numerical data agree well with this formula.

Radiative recombination mechanisms in individual wurtzite ZnSe nanowires with a defect-free single-crystalline microstructure.

Photoluminescence (PL) spectroscopy performed on arrays of semiconductor nanowires (NWs) suffers from ensemble broadening of PL lines, and fails to separate the PL from NWs of different crystal structures in the ensemble. Even the results on PL from single NWs are not devoid of ambiguity. This is because the influence of structural defects in NWs, such as stacking faults, twin boundaries and dislocations, on their optical spectra cannot be accounted for since the structural characteristics of the same NW remain largely unknown. We performed low-temperature PL spectroscopy on individual wurtzite (WZ) ZnSe NWs, and confirmed a homogeneous single-crystalline microstructure without any extended defects in these NWs, thus excluding any role of structural imperfections in their optical spectra. The luminescence is shown to be dominated solely by native point defects, while no role of extrinsic impurities was found. The radiative recombination is shown to originate from excitons bound to vacancies of Zn (VZn), VZn-complexes, and their phonon replicas. The binding energies of the acceptor-bound excitons, ionization energies of the acceptors, and average number of phonons emitted for shallow donor-VZn acceptor pair related transition were determined. Distinct from previous studies on PL from arrays of ZnSe NWs, this work provides an unambiguous interpretation of the PL spectra and assignment of PL peaks to WZ ZnSe. Narrow excitonic emission of linewidths 2.9 meV indicate excellent optical quality of WZ ZnSe NWs.

Interface interaction induced ultra-dense nanoparticles assemblies.

We demonstrate a simple and clean physical methodology for fabricating such nanoparticle assemblies (dense arrays and/or dendrites) related to the interfacial interaction between the constructed materials and the anodized aluminum oxide (AAO) porous templates. The interfacial interaction can be regulated by the surface tension of the constructed materials and the AAO membrane, and the AAO-template structure, such as pore size, membrane thickness and surface morphologies. Depending on the interfacial interaction between the constructed materials and the AAO templates, NP arrays with mean particle diameters from 3.8 ± 1.0 nm to 12.5 ± 2.9 nm, mean inter-edge spacings from 3.5 ± 1.4 nm to 7.9 ± 3.4 nm and areal densities from 5.6 × 10(11) NPs per cm(2) to 1.5 × 10(12) NPs per cm(2) are fabricated over large areas (currently ~2 cm × 3 cm). The fabrication process includes firstly thermal evaporation of metal layers no more than 10 nm thick on the pre-coated Si wafer by AAO templates with a thickness of less than 150 nm and mean pore sizes no more than 12 nm, and then removal of the AAO templates. The NP arrays can be stable for hours at a temperature slightly below the melting point of the constructed materials (e.g., ~800 °C for Au NPs for 4 hours) with little change in size and inter-particle separation. Using one of them (e.g., 11.8 nm Au NPs) as growth-oriented catalysts, ultra-thin (12.1 ± 2.3 nm) dense nanowires can be conveniently obtained. Furthermore, dendrite superstructures can be generated easily from eutectic alloy NPs with diameters of ~10 nm pre-formed by thermal evaporation of metal layers more than 20 nm thick on surface-patterned thick AAO templates (e.g., 500 nm). The resulting dendrites, dense arrays and other superstructures (i.e., nanorods and nanowires) formed using NP arrays as catalysts, should have broad applications in catalysis, information technology, photovoltaics and biomedical engineering.

Probing the gate--voltage-dependent surface potential of individual InAs nanowires using random telegraph signals.

We report a novel method for probing the gate-voltage dependence of the surface potential of individual semiconductor nanowires. The statistics of electronic occupation of a single defect on the surface of the nanowire, determined from a random telegraph signal, is used as a measure for the local potential. The method is demonstrated for the case of one or two switching defects in indium arsenide (InAs) nanowire field effect transistors at temperatures T=25-77 K. Comparison with a self-consistent model shows that surface potential variation is retarded in the conducting regime due to screening by surface states with density Dss≈10(12) cm(-2) eV(-1). Temperature-dependent dynamics of electron capture and emission producing the random telegraph signals are also analyzed, and multiphonon emission is identified as the process responsible for capture and emission of electrons from the surface traps. Two defects studied in detail had capture activation energies of EB≈50 meV and EB≈110 meV and cross sections of σ∞≈3×10(-19) cm2 and σ∞≈2×10(-17) cm2, respectively. A lattice relaxation energy of Sℏω=187±15 meV was found for the first defect.

Defect studies of ZnSe nanowires.

During the synthesis of ZnSe nanowires various point and extended defects can form, leading to observed stacking faults and twinning defects, and strong defect related emission in photoluminescence spectra. In this paper, we report on the development of a simple thermodynamic model for estimating the defect concentration in ZnSe nanowires grown under varying Se vapour pressure and for explaining the results of our experimental findings. Positron annihilation spectroscopy was used successfully for the first time for nanowires and the results support predictions from the defect model as well as agreeing well with our structural and optical characterization results. Under very high Se vapour pressure, Se nodules were observed to form on the sidewalls of the nanowire, indicating that beyond a limit, excess Se will begin to precipitate out of the liquid alloy droplet in the vapour-liquid-solid growth of nanowires.