Near-Field Observation of the Photonic Spin Hall Effect.

The photonic spin Hall effect, referring to the spatial separation of photons with opposite spins due to spin-orbit interactions, has enabled potential for various spin-sensitive applications and devices. Here, using scattering-type near-field scanning optical microscopy, we observe spin-orbit interactions introduced by a subwavelength semiring antenna integrated in a plasmonic circuit. Clear evidence of unidirectional excitation of surface plasmon polaritons is obtained by direct comparison of the amplitude- and phase-resolved near-field maps of the plasmonic nanocircuit under excitation with photons of opposite spin states coupled to a plasmonic nanoantenna. We present details of the antenna design and experimental methods to investigate the spatial variation of complex electromagnetic fields in a spin-sensitive plasmonic circuit. The reported findings offer valuable insights into the generation, characterization, and application of the photonic spin Hall effect in photonic integrated circuits for future and emerging spin-selective nanophotonic systems.

Observation and Active Control of a Collective Polariton Mode and Polaritonic Band Gap in Few-Layer WS2 Strongly Coupled with Plasmonic Lattices.

Two-dimensional semiconductors host excitons with very large oscillator strengths and binding energies due to significantly reduced carrier screening. Two-dimensional semiconductors integrated with optical cavities are emerging as a promising platform for studying strong light-matter interactions as a route to explore a variety of exotic many-body effects. Here, in few-layered WS2 coupled with plasmonic nanoparticle lattices, we observe the formation of a collective polaritonic mode near the exciton energy and the formation of a complete polariton band gap with energy scale comparable to the exciton-plasmon coupling strength. A coupled oscillator model reveals that the collective mode arises from the cooperative coupling of the excitons to the plasmonic lattice diffraction orders via exciton-exciton interactions, leading to ultrastrong coupling. The emergence of the collective mode is accompanied by a superlinear increase of the polariton mode splitting as a function of the square root of the exciton oscillator strength. The presence of these many body effects, which are enhanced in systems which lack bulk polarization, not only allows the formation of a collective mode with periodically varying field profiles, but also further enhances the exciton-plasmon coupling. By integrating the hybrid WS2-plasmonic lattice device with a field-effect transistor, we demonstrate active tuning of the collective mode and the polariton band gap. We also report electrically tunable waveguiding in the polariton band gap region through a line defect, which can be turned off with gate bias that can extinguish the collective mode and the polariton band gap. These systems provide new opportunities for obtaining a deeper and systematic understanding of many body cooperative phenomena in two-dimensional materials coupled with periodic photonic systems and for designing more complex and actively controllable polaritonic devices including switchable polariton lasers, waveguides, and optical logical elements.

Silicon nitride grating based planar spectral splitting concentrator for NIR light harvesting.

We design a multi-layered solar spectral splitting planar concentrator for near infrared (NIR) light energy harvesting application. Each layer includes a silicon nitride based subwavelength diffraction grating on top of a glass substrate that is optimized to diffract the incoming solar radiation in a specific band from a broad spectral band (700-1400 nm in the NIR region) into guided modes propagating inside the glass substrate. The steep diffraction angle due to subwavelength grating results in concentrated light at the edge of each layer where it is then converted to electricity using a photovoltaic cell. The spectral splitting planar concentrator shows an overall NIR guiding efficiency of ∼18%, and power conversion efficiency of ∼11%. The design can be potentially used for building integrated photovoltaics application.

Neuromorphic photonics with electro-absorption modulators.

Photonic neural networks benefit from both the high-channel capacity and the wave nature of light acting as an effective weighting mechanism through linear optics. Incorporating a nonlinear activation function by using active integrated photonic components allows neural networks with multiple layers to be built monolithically, eliminating the need for energy and latency costs due to external conversion. Interferometer-based modulators, while popular in communications, have been shown to require more area than absorption-based modulators, resulting in a reduced neural network density. Here, we develop a model for absorption modulators in an electro-optic fully connected neural network, including noise, and compare the network's performance with the activation functions produced intrinsically by five types of absorption modulators. Our results show the quantum well absorption modulator-based electro-optic neuron has the best performance allowing for 96% prediction accuracy with 1.7×10-12 J/MAC excluding laser power when performing MNIST classification in a 2 hidden layer feed-forward photonic neural network.

Waveguide-based electro-absorption modulator performance: comparative analysis.

Electro-optic modulators perform a key function for data processing and communication. Rapid growth in data volume and increasing bits per second rates demand increased transmitter and thus modulator performance. Recent years have seen the introduction of new materials and modulator designs to include polaritonic optical modes aimed at achieving advanced performance in terms of speed, energy efficiency, and footprint. Such ad hoc modulator designs, however, leave a universal design for these novel material classes of devices missing. Here we execute a holistic performance analysis for waveguide-based electro-absorption modulators and use the performance metric switching energy per unit bandwidth (speed). We show that the performance is fundamentally determined by the ratio of the differential absorption cross-section of the switching material's broadening and the waveguide effective mode area. We find that the former shows highest performance for a broad class of materials relying on Pauli-blocking (absorption saturation), such as semiconductor quantum wells, quantum dots, graphene, and other 2D materials, but is quite similar amongst these classes. In this respect these materials are clearly superior to those relying on free carrier absorption, such as Si and ITO. The performance improvement on the material side is fundamentally limited by the oscillator sum rule and thermal broadening of the Fermi-Dirac distribution. We also find that performance scales with modal waveguide confinement. Thus, we find highest energy-bandwidth-ratio modulator designs to be graphene, QD, QW, or 2D material-based plasmonic slot waveguides where the electric field is in-plane with the switching material dimension. We show that this improvement always comes at the expense of increased insertion loss. Incorporating fundamental device physics, design trade-offs, and resulting performance, this analysis aims to guide future experimental modulator explorations.

MO detector (MOD): a dual-function optical modulator-detector for on-chip communication.

While augmenting network on chips (NoC) with photonic links enables high-bandwidth communication, the overhead for photonics is rather large, mainly driven by bulky footprints and the multi-functionality of transceivers. The latter requires, in addition to a photon source, signal modulation and detection. If the NoC were photonically augmented at every network point to enable all-to-all connectivity, the resulting photonic overhead would be excessive. Besides, the high bandwidth of a single optical bus may be sufficient to supply the data-sharing demand of a network. Spatial signal routing is a necessary function of data communication in NoCs. However, if photonic links are used to augment electronics, an energy-costly optical-electrical-optical (OEO) conversion is required since routing is currently executed in the electronic domain. Here we show a novel integrated broadband hybrid photonic-plasmonic device termed an MO detector featuring dual light modulation and detection. With 10 dB extinction ratio and 0.8 dB insertion loss at the modulation state and 0.7 A/W responsivity at the detection state based on the finite-different time-domain simulation, this transceiver-like device (i) eliminates the OEO conversion, (ii) reduces optical losses from photodetectors via bypassing the photodetector when not needed, and (iii) enables cognitive routing strategies for network-on-chips. As such, the MO detector acts as a micrometer-compact transceiver for next-generation NoCs.

Residue number system arithmetic based on integrated nanophotonics.

The residue number system (RNS) enables dimensionality reduction of an arithmetic problem by representing a large number as a set of smaller integers, where the number is decomposed by prime number factorization. These reduced problem sets can then be processed independently and in parallel, thus improving computational efficiency and speed. Here, we show an optical RNS hardware representation based on integrated nanophotonics. The digit-wise shifting in RNS arithmetic is expressed as spatial routing of an optical signal in 2×2 hybrid photonic-plasmonic switches. Here, the residue is represented by spatially shifting the input waveguides relative to the routers' outputs, where the moduli are represented by the number of waveguides. By cascading the photonic 2×2 switches, we design a photonic RNS adder and a multiplier forming an all-to-all sparse directional network. The advantage of this photonic arithmetic processor is the short (10's ps) computational execution time given by the optical propagation delay through the integrated nanophotonic router. Furthermore, we show how photonic processing in-the-network leverages the natural parallelism of optics such as wavelength-division-multiplexing in this RNS processor. A key application for such a photonic RNS engine is the functional analysis of convolutional neural networks.

Analytical approach of Brillouin amplification over threshold.

We report on an accurate closed-form analytical model for the gain of a Brillouin fiber amplifier that accounts for material loss in the depleted pump regime. We determined the operational model limits with respect to its relevant parameters and pump regimes through both numerical and experimental validation. As such, our results enable accurate performance prediction of Brillouin fiber amplifiers operating in the weak-pump, high-gain, and saturation regimes alike.

Attojoule-efficient graphene optical modulators.

Electro-optic modulation is a technology-relevant function for signal keying, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. With silicon-based modulators being bulky and inefficient, here we discuss graphene-based devices heterogeneously integrated. This study provides a critical and encompassing discussion of the physics and performance of graphene. We provide a holistic analysis of the underlying physics of modulators including graphene's index tunability, the underlying optical mode, and discuss resulting performance vectors for this novel class of hybrid modulators. Our results show that reducing the modal area and reducing the effective broadening of the active material are key to improving device performance defined by the ratio of energy-bandwidth and footprint. We further show how the waveguide's polarization must be in-plane with graphene, such as given by plasmonic-slot structures, for performance improvements. A high device performance can be obtained by introducing multi- or bi-layer graphene modulator designs. Lastly, we present recent results of a graphene-based hybrid-photon-plasmon modulator on a silicon platform and discuss electron beam lithography treatments for transferred graphene for the relevant Fermi level tuning. Being physically compact, this 100 aJ/bit modulator opens the path towards a novel class of attojoule efficient opto-electronics.

Graphene-based solitons for spatial division multiplexed switching.

Spatial division multiplexing utilizes the directionality of the light's propagating k-vector to separate it into distinct spatial directions. Here, we show that the anisotropy of orthogonal spatial solitons propagating in a single graphene monolayer results in phase-based multiplexing. We use the self-confinement properties of spatial solitons to increase the usable density of states (DOS) of this switching system. Furthermore, we show that crossing two orthogonal solitons exhibits a low (0.035 dB) mutual disturbance from another enabling independent k-vector switching. The efficient utilization of the DOS and multiplexing in real space enables data processing parallelism with applications in optical networking and computing.

Two-dimensional design and analysis of trench-coupler based Silicon Mach-Zehnder thermo-optic switch.

Optical switches are key components for routing of light transmission paths in data links. Existing waveguide-based Mach-Zehnder interferometer (MZI) switches occupy a significant amount of real estate on-chip. Here we propose a compact Silicon MZI thermo-optic 2 × 2 photonic switch, consisting of two frustrated total internal reflection (TIR) trench couplers and TIR mirror-based 90° waveguide bends, forming a rectangular MZI configuration. The switch allows for reconfigurable design footprints due to selected control of the optical signal being transmitted and reflected at the 90° crosses and bends. Our analysis results show that the switch exhibits a chip size of 42 µm × 42 µm, the extinction ratio of ~14 dB, the rise and fall time of 20 µs and 16 µs, and the low switching voltage and power of 0.35 V and 26 mW, respectively. This device configuration can readily scale its pattern at the two-dimensional directions, making them attractive for Silicon photonic integrated circuits.

Enhanced photon absorption in spiral nanostructured solar cells using layered 2D materials.

Recent investigations of semiconducting two-dimensional (2D) transition metal dichalcogenides have provided evidence for strong light absorption relative to its thickness attributed to high density of states. Stacking a combination of metallic, insulating, and semiconducting 2D materials enables functional devices with atomic thicknesses. While photovoltaic cells based on 2D materials have been demonstrated, the reported absorption is still just a few percent of the incident light due to their sub-wavelength thickness leading to low cell efficiencies. Here we show that taking advantage of the mechanical flexibility of 2D materials by rolling a molybdenum disulfide (MoS(2))/graphene (Gr)/hexagonal boron nitride stack to a spiral solar cell allows for optical absorption up to 90%. The optical absorption of a 1 µm long hetero-material spiral cell consisting of the aforementioned hetero stack is about 50% stronger compared to a planar MoS(2) cell of the same thickness; although the volumetric absorbing material ratio is only 6%. A core-shell structure exhibits enhanced absorption and pronounced absorption peaks with respect to a spiral structure without metallic contacts. We anticipate these results to provide guidance for photonic structures that take advantage of the unique properties of 2D materials in solar energy conversion applications.

Plasmon lasers at deep subwavelength scale.

Laser science has been successful in producing increasingly high-powered, faster and smaller coherent light sources. Examples of recent advances are microscopic lasers that can reach the diffraction limit, based on photonic crystals, metal-clad cavities and nanowires. However, such lasers are restricted, both in optical mode size and physical device dimension, to being larger than half the wavelength of the optical field, and it remains a key fundamental challenge to realize ultracompact lasers that can directly generate coherent optical fields at the nanometre scale, far beyond the diffraction limit. A way of addressing this issue is to make use of surface plasmons, which are capable of tightly localizing light, but so far ohmic losses at optical frequencies have inhibited the realization of truly nanometre-scale lasers based on such approaches. A recent theoretical work predicted that such losses could be significantly reduced while maintaining ultrasmall modes in a hybrid plasmonic waveguide. Here we report the experimental demonstration of nanometre-scale plasmonic lasers, generating optical modes a hundred times smaller than the diffraction limit. We realize such lasers using a hybrid plasmonic waveguide consisting of a high-gain cadmium sulphide semiconductor nanowire, separated from a silver surface by a 5-nm-thick insulating gap. Direct measurements of the emission lifetime reveal a broad-band enhancement of the nanowire's exciton spontaneous emission rate by up to six times owing to the strong mode confinement and the signature of apparently threshold-less lasing. Because plasmonic modes have no cutoff, we are able to demonstrate downscaling of the lateral dimensions of both the device and the optical mode. Plasmonic lasers thus offer the possibility of exploring extreme interactions between light and matter, opening up new avenues in the fields of active photonic circuits, bio-sensing and quantum information technology.

Multiplexed and electrically modulated plasmon laser circuit.

With unprecedented ability to localize electromagnetic field in time and space, the nanometer scale laser promises exceptionally broad scientific and technological innovation. However, as the laser cavity becomes subwavelength, the diffraction of light prohibits the directional emission, so-called the directionality, one of the fundamental attributes of the laser. Here, we have demonstrated a deep subwavelength waveguide embedded (WEB) plasmon laser that directs more than 70% of its radiation into an embedded semiconductor nanobelt waveguide with dramatically enhanced radiation efficiency. The unique configuration of WEB plasmon laser naturally integrates photonic and electronic functionality allowing both efficient electrical modulation and wavelength multiplexing. We have demonstrated a plasmonic circuit integrating five independently modulated multicolored plasmon laser sources multiplexed onto a single semiconductor nanobelt waveguide, illustrating the potential of plasmon lasers for large scale, ultradense photonic integration.

Enhancing Focusing and Defocusing Capabilities with a Dynamically Reconfigurable Metalens Utilizing Sb2Se3 Phase-Change Material.

Metalenses are emerging as an alternative to digital micromirror devices (DMDs), with the advantages of compactness and flexibility. The exploration of metalenses has ignited enthusiasm among optical engineers, positioning them as the forthcoming frontier in technology. In this paper, we advocate for the implementation of the phase-change material, Sb2Se3, capable of providing swift, reversible, non-volatile focusing and defocusing within the 1550 nm telecom spectrum. The lens, equipped with a robust ITO microheater, offers unparalleled functionality and constitutes a significant step toward dynamic metalenses that can be integrated with beamforming applications. After a meticulously conducted microfabrication process, we showcase a device capable of rapid tuning (0.1 MHz level) for metalens focusing and defocusing at C band communication, achieved by alternating the PCM state between the amorphous and crystalline states. The findings from the experiment show that the device has a high contrast ratio for switching of 28.7 dB.

Self-Powered Sb2Te3/MoS2 Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared.

Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS2/Sb2Te3 vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W-1, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction's band structure. This subsequently shifts the detector's optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits.

Electrical programmable multilevel nonvolatile photonic random-access memory.

Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase-Change Materials (PCMs) have been showed multilevel memory capability, but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package challenges. Here we demonstrate a multistate electrically programmed low-loss nonvolatile photonic memory based on a broadband transparent phase-change material (Ge2Sb2Se5, GSSe) with ultralow absorption in the amorphous state. A zero-static-power and electrically programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform, featuring efficient amplitude modulation up to 0.2 dB/µm and an ultralow insertion loss of total 0.12 dB for a 4-bit memory showing a 100× improved signal to loss ratio compared to other phase-change-materials based photonic memories. We further optimize the positioning of dual microheaters validating performance tradeoffs. Experimentally we demonstrate a half-a-million cyclability test showcasing the robust approach of this material and device. Low-loss photonic retention-of-state adds a key feature for photonic functional and programmable circuits impacting many applications including neural networks, LiDAR, and sensors for example.

Room-temperature sub-diffraction-limited plasmon laser by total internal reflection.

Plasmon lasers are a new class of coherent optical amplifiers that generate and sustain light well below its diffraction limit. Their intense, coherent and confined optical fields can enhance significantly light-matter interactions and bring fundamentally new capabilities to bio-sensing, data storage, photolithography and optical communications. However, metallic plasmon laser cavities generally exhibit both high metal and radiation losses, limiting the operation of plasmon lasers to cryogenic temperatures, where sufficient gain can be attained. Here, we present a room-temperature semiconductor sub-diffraction-limited laser by adopting total internal reflection of surface plasmons to mitigate the radiation loss, while using hybrid semiconductor-insulator-metal nanosquares for strong confinement with low metal loss. High cavity quality factors, approaching 100, along with strong λ/20 mode confinement, lead to enhancements of spontaneous emission rate by up to 18-fold. By controlling the structural geometry we reduce the number of cavity modes to achieve single-mode lasing.

Strongly enhanced molecular fluorescence inside a nanoscale waveguide gap.

We experimentally demonstrate dramatically enhanced light-matter interaction for molecules placed inside the nanometer scale gap of a plasmonic waveguide. We observe spontaneous emission rate enhancements of up to about 60 times due to strong optical localization in two dimensions. This rate enhancement is a nonresonant nature of the plasmonic waveguide under study overcoming the fundamental bandwidth limitation of conventional devices. Moreover, we show that about 85% of molecular emission couples into the waveguide highlighting the dominance of the nanoscale optical mode in competing with quenching processes. Such optics at molecular length scales paves the way toward integrated on-chip photon source, rapid transfer of quantum information, and efficient light extraction for solid-state-lighting devices.

A Chirality-Based Quantum Leap.

There is increasing interest in the study of chiral degrees of freedom occurring in matter and in electromagnetic fields. Opportunities in quantum sciences will likely exploit two main areas that are the focus of this Review: (1) recent observations of the chiral-induced spin selectivity (CISS) effect in chiral molecules and engineered nanomaterials and (2) rapidly evolving nanophotonic strategies designed to amplify chiral light-matter interactions. On the one hand, the CISS effect underpins the observation that charge transport through nanoscopic chiral structures favors a particular electronic spin orientation, resulting in large room-temperature spin polarizations. Observations of the CISS effect suggest opportunities for spin control and for the design and fabrication of room-temperature quantum devices from the bottom up, with atomic-scale precision and molecular modularity. On the other hand, chiral-optical effects that depend on both spin- and orbital-angular momentum of photons could offer key advantages in all-optical and quantum information technologies. In particular, amplification of these chiral light-matter interactions using rationally designed plasmonic and dielectric nanomaterials provide approaches to manipulate light intensity, polarization, and phase in confined nanoscale geometries. Any technology that relies on optimal charge transport, or optical control and readout, including quantum devices for logic, sensing, and storage, may benefit from chiral quantum properties. These properties can be theoretically and experimentally investigated from a quantum information perspective, which has not yet been fully developed. There are uncharted implications for the quantum sciences once chiral couplings can be engineered to control the storage, transduction, and manipulation of quantum information. This forward-looking Review provides a survey of the experimental and theoretical fundamentals of chiral-influenced quantum effects and presents a vision for their possible future roles in enabling room-temperature quantum technologies.