Utilizing Domain Engineering to Achieve High-Polarization Relaxor Ferroelectrics for Low-Consumption Ceramic Capacitors.

This study focuses on incorporating NaNbO3 (NN) into the Ba0.85Ca0.15Zr0.9Ti0.1O3 (BCZT) lattice to form (1 - x)BCZT-xNN ceramics. Although antiferroelectricity was not observed, an observed domain-movement-diminishment behavior with increasing NN dopant induced the formation of high polarization walls (HPWs) between adjacent C-phases. The 0.90BCZT-0.10NN composition exhibited superior polarization compared to most BCZT-based ferroelectrics, as validated by mathematical derivation. Integration of these findings revealed a Wrec of 3.86 J/cm3 at 360 kV/cm, with a high Wrec/Eb ratio defining energy consumption efficiency in dielectric capacitors. This work introduces a novel approach to fabricating low-consumption dielectric capacitors. Additionally, a significantly high Wrec of 5.36 J/cm3 was achieved with an NN dopant concentration of 0.30.

A polarization double-enhancement strategy to achieve super low energy consumption with ultra-high energy storage capacity in BCZT-based relaxor ferroelectrics.

Due to dielectric capacitors' already-obtained fast charge-discharge speed, research has been focused on improving their Wrec. Increasing the polarization and enhancing the voltage endurance are efficient ways to reach higher Wrec, however simultaneous modification still seems a paradox. For example, in the ferroelectric-to-relaxor ferroelectric (FE-to-RFE) phase transition strategy, which has been widely used in the latest decade, electric breakdown strength (Eb) and energy storage efficiency (η) always increase, while at the same time, the maximum polarization (Pmax) inevitably decreases. The solution to this problem can be obtained from another degree of freedom, like defect engineering. By incorporating Bi(Zn2/3Ta1/3)O3 (BZT) into the Ba0.15Ca0.85Zr0.1Ti0.9O3 (BCZT) lattice to form (1 - x)Ba0.15Ca0.85Zr0.1Ti0.9O3-xBi(Zn2/3Ta1/3)O3 (BCZT-xBZT) solid-solution ceramics, in this work, ultrahigh ferroelectric polarization was achieved in BCZT-0.15BZT, which is caused by the polarization double-enhancement, comprising the contribution of interfacial and dipole polarization. In addition, due to the electron compensation, a Schottky contact formed at the interface between the electrode and the ceramic, which in the meantime, enhanced its Eb. A Wrec of 8.03 J cm-3, which is the highest among the BCZT-based ceramics reported so far, with an extremely low energy consumption, was finally achieved. BCZT-0.15BZT also has relatively good polarization fatigue after long-term use, good energy storage frequency stability and thermal stability, as well as excellent discharge properties.

Stabilizing Crystal Framework of an Overlithiated Li1+xMn2O4 Cathode by Heterointerfacial Epitaxial Strain for High-Performance Microbatteries.

To meet the increasing demands of high-energy and high-power-density lithium-ion microbatteries, overlithiated Li1+xMn2O4 (0 ≤ x ≤ 1) is an attractive cathode candidate due to the high theoretical capacity of 296 mAh g-1 and the interconnected lithium-ion diffusion pathways. However, overlithiation triggers the irreversible cubic-tetragonal phase transition due to Jahn-Teller distortion, causing rapid capacity degradation. In contrast to conventional lithium-ion batteries, microbatteries offer the opportunity to develop specific thin-film-based modification strategies. Here, heterointerfacial lattice strain is proposed to stabilize the spinel crystal framework of an overlithiated Li1+xMn2O4 (LMO) cathode by epitaxial thin film growth on an underlying SrRuO3 (SRO) electronic conductor layer. It is demonstrated that the lattice misfit at the LMO/SRO heterointerface results in an in-plane epitaxial constraint in the full LMO film. This suppresses the lattice expansion during overlithiation that typically occurs in the in-plane direction. It is proposed by density functional theory modeling that the epitaxial constraint can accommodate the internal lattice stress originating from the cubic-tetragonal transition during overlithiation. As a result, a doubling of the capacity is achieved by reversibly intercalating a second lithium ion in a LiMn2O4 epitaxial cathode with a complete reversible phase transition. An impressive cycling stability can be obtained with reversible capacity retentions of above 90.3 and 77.4% for the 4 and 3 V range, respectively. This provides an effective strategy toward a stable overlithiated Li1+xMn2O4 epitaxial cathode for high-performance microbatteries.

Enhanced permittivity of negative permittivity middle-layer sandwich polymer matrix composites through conductive filling with flake MAX phase ceramics.

Polymer matrix composites are expected to promote the development of embedded packaging technology for circuit boards, but it is still impossible to obtain polymer matrix composites with high permittivity and low loss tangent simultaneously. In this study, a laminated composite with a middle-layer possessing negative permittivity effects was prepared by hot pressing sintering using MAX phase ceramics as a conductive filler. High permittivity (170@1 kHz) and low loss tangent (0.3@1 kHz) were achieved in traditional sandwich polymer matrix composites (SPMCs). Its high permittivity can be explained by the series capacitor model and the interfacial polarization promoted by the flake structure of the MAX phase ceramics. Low loss tangent is guaranteed by the ohmic barrier effect caused by the huge resistance difference between adjacent layers in the composite material. These SPMCs with special structure are expected to provide new ideas for developing embedded capacitors.

Large Energy Density, Excellent Thermal Stability, and High Cycling Endurance of Lead-Free BaZr0.2Ti0.8O3 Film Capacitors.

A large energy storage density (ESD) of 30.4 J/cm3 and high energy efficiency of 81.7% under an electrical field of 3 MV/cm was achieved at room temperature by the fabrication of environmentally friendly lead-free BaZr0.2Ti0.8O3 epitaxial thin films on Nb-doped SrTiO3 (001) substrates by using a radio-frequency magnetron sputtering system. Moreover, the BZT film capacitors exhibit great thermal stability of the ESD from 16.8 J/cm3 to 14.0 J/cm3 with efficiency of beyond 67.4% and high fatigue endurance (up to 106 cycles) in a wide temperature range from room temperature to 125 °C. Compared to other BaTiO3-based energy storage capacitor materials and even Pb-based systems, BaZr0.2Ti0.8O3 thin film capacitors show either high ESD or great energy efficiency. All of these excellent results revealed that the BaZr0.2Ti0.8O3 film capacitors have huge potential in the application of modern electronics, such as locomotive and pulse power, in harsh working environments.

Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering.

Ultrahigh energy storage density of 52.4 J cm-3 with optimistic efficiency of 72.3% is achieved by interface engineering of epitaxial lead-free oxide multilayers at room temperature. Moreover, the excellent thermal stability of the performances provides solid basis for widespread applications of the thin film systems in modern electronic and power modules in harsh working environments.