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Inorganic halide perovskite nanocrystals (NCs) are being widely explored as next-generation optoelectronic materials. Critical to understanding the optoelectronic properties and stability behavior of perovskite NCs is the material's surface structure, where the local atomic configuration deviates from that of the bulk. Through low-dose aberration-corrected scanning transmission electron microscopy and quantitative imaging analysis techniques, we directly observed the atomic structure at the surface of the CsPbBr3 NCs. CsPbBr3 NCs are terminated by a Cs-Br plane, and the surface Cs-Cs bond length decreases significantly (â¼5.6%) relative to the bulk, imposing compressive strain and inducing polarization, which we also observed in CsPbI3 NCs. Density functional theory calculations suggest such a reconstructed surface contributes to the separation of holes and electrons. These findings enhance our fundamental understanding of the atomic-scale structure, strain, and polarity at the surface of inorganic halide perovskites and provide valuable insights into designing stable and efficient optoelectronic devices.
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Covalent organic frameworks (COFs) are molecule-based 2D and 3D materials that possess a wide range of mechanical and electronic properties. We have performed a joint experimental and theoretical study of the electronic structure of boroxine-linked COFs grown under ultrahigh vacuum conditions and characterized using scanning tunneling spectroscopy on Au(111) and hBN/Cu(111) substrates. Our results show that a single hBN layer electronically decouples the COF from the metallic substrate, thus suppressing substrate-induced broadening and revealing new features in the COF electronic local density of states (LDOS). The resulting sharpening of LDOS features allows us to experimentally determine the COF band gap, bandwidths, and the electronic hopping amplitude between adjacent COF bridge sites. These experimental parameters are consistent with the results of first-principles theoretical predictions.
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Emergent quantum phenomena in electronically coupled two-dimensional heterostructures are central to next-generation optical, electronic, and quantum information applications. Tailoring electronic band gaps in coupled heterostructures would permit control of such phenomena and is the subject of significant research interest. Two-dimensional polymers (2DPs) offer a compelling route to tailored band structures through the selection of molecular constituents. However, despite the promise of synthetic flexibility and electronic design, fabrication of 2DPs that form electronically coupled 2D heterostructures remains an outstanding challenge. Here, we report the rational design and optimized synthesis of electronically coupled semiconducting 2DP/2D transition metal dichalcogenide van der Waals heterostructures, demonstrate direct exfoliation of the highly crystalline and oriented 2DP films down to a few nanometers, and present the first thickness-dependent study of 2DP/MoS2 heterostructures. Control over the 2DP layers reveals enhancement of the 2DP photoluminescence by two orders of magnitude in ultrathin sheets and an unexpected thickness-dependent modulation of the ultrafast excited state dynamics in the 2DP/MoS2 heterostructure. These results provide fundamental insight into the electronic structure of 2DPs and present a route to tune emergent quantum phenomena in 2DP hybrid van der Waals heterostructures.
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Disulfuros/química , Electrones , Molibdeno/química , Polímeros/química , Modelos Moleculares , Conformación MolecularRESUMEN
A series of rubrene derivatives were synthesized and the influence of the side group in enhancing photo-oxidative stability was evaluated. Photo-oxidation half-lives were determined via UV-vis absorption spectroscopy, which revealed thiophene containing derivatives to be the most stable species. The electron affinity of the compounds did not correlate with stability as previously reported in literature. Our work shows that shorter excited-state lifetimes result in increased photo-oxidative stability in these rubrene derivatives. These results confirm that faster relaxation kinetics out-compete the formation of reactive oxygen species that ultimately degrade linear oligoacenes. This report highlights the importance of using molecular design to tune excited-state lifetimes in order to generate more stable oligoacenes.
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Poly(isoindigo-alt-3,4-difluorothiophene) (PIID[2F]T) analogues used as "polymer acceptors" in bulk-heterojunction (BHJ) solar cells achieve >7 % efficiency when used in conjunction with the polymer donor PBFTAZ (model system; copolymer of benzo[1,2-b:4,5-b']dithiophene and 5,6-difluorobenzotriazole). Considering that most efficient polymer-acceptor alternatives to fullerenes (e.g. PC61 BM or its C71 derivative) are based on perylenediimide or naphthalenediimide motifs thus far, branched alkyl-substituted PIID[2F]T polymers are particularly promising non-fullerene candidates for "all-polymer" BHJ solar cells.
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Branched-alkyl-substituted poly(thieno[3,4-c]pyrrole-4,6-dione-alt-3,4-difluorothiophene) (PTPD[2F]T) can be used as a polymer acceptor in bulk heterojunction (BHJ) solar cells with a low-band-gap polymer donor (PCE10) commonly used with fullerenes. The "all-polymer" BHJ devices made with PTPD[2F]T achieve efficiencies of up to 4.4 %. While, to date, most efficient polymer acceptors are based on perylenediimide or naphthalenediimide motifs, our study of PTPD[2F]T polymers shows that linear, all-thiophene systems with adequately substituted main chains can also be conducive to efficient BHJ solar cells with polymer donors.
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Linear and non-linear optical properties of indeno[2,1-b]fluorene (1) and its structural isomers with 20 π-electrons have been studied using many body methods. As compared to other π electron systems of similar conjugation length, the experimentally measured optical gap (vertical excitation energy) and the singlet-triplet gap of 1 are quite small. The diradical character calculated using the ab initio density matrix renormalization group (DMRG) of 1 is the largest among its isomers, which explains its lowest singlet-triplet gap. The optical gaps calculated by the DMRG method, employing the long-range interacting Pariser-Parr-Pople model, show good agreement with the experimental values as compared to those calculated by DFT, MP2, and CASPT2 methods. Using correlated Hamiltonian and the DMRG approach, the third harmonic generation coefficient is found to correlate well with the diradical character.
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Tracking the dynamics of ultrafast hole injection into copper thiocyanate (CuSCN) at the interface can be experimentally challenging. These challenges include restrictions in accessing the ultraviolet spectral range through transient electronic spectroscopy, where the absorption spectrum of CuSCN is located. Time-resolved vibrational spectroscopy solves this problem by tracking marker modes at specific frequencies and allowing direct access to dynamical information at the molecular level at donor-acceptor interfaces in real time. This study uses photoabsorber PM6 (poly[(2,6-(4,8-bis(5-(2-ethylhexyl-3-fluoro)thiophen-2-yl)-benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7'-bis(2-ethylhexyl)-benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))]) as a model system to explore and decipher the hole transfer dynamics of CuSCN using femtosecond (fs) mid-infrared (IR) spectroscopy. The time-resolved results indicate that excited PM6 exhibits a sharp vibrational mode at 1599 cm-1 attributed to the carbonyl group, matching the predicted frequency position obtained from time-dependent density functional theory (DFT) calculations. The fs mid-IR spectroscopy demonstrates a fast formation (<168 fs) and blue spectral shift of the CN stretching vibration from 2118 cm-1 for CuSCN alone to 2180 cm-1 for PM6/CuSCN, confirming the hole transfer from PM6 to CuSCN. The short interfacial distance and high frontier orbital delocalization obtained from the interfacial DFT models support a coherent and ultrafast regime for hole transfer. These results provide direct evidence for hole injection at the interface of CuSCN for the first time using femtosecond mid-IR spectroscopy and serve as a new investigative approach for interfacial chemistry and solar cell communities.
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One of the most effective approaches to optimizing the performance of perovskite solar cells is to fully understand the ultrafast carrier dynamics at the interfaces between absorber and transporting layers at both the molecular and atomic levels. Here, the injection dynamics of hot and relaxed charge carriers at the interface between the hybrid perovskite, formamidinium lead bromide (FAPbBr3), and the organic electron acceptor, IEICO-4F, are investigated and deciphered by using femtosecond (fs) mid-infrared (IR), transient absorption (TA), and fluorescence spectroscopies. The visible femtosecond-TA measurements reveal the generation of hot carriers and their transition to free carriers in the pure FAPbBr3 film. Meanwhile, the efficient extraction of hot carriers in the mixed FAPbBr3/IEICO-4F film is clearly evidenced by the complete disappearance of their spectral signature. More specifically, the time-resolved results reveal that hot carriers are injected from FAPbBr3 to IEICO-4F within 150 fs, while the transfer time for the relaxed carriers is about 205 fs. The time-resolved mid-IR experiments also demonstrate the ultrafast formation of two peaks at 2115 and 2233 cm-1, which can be attributed to the C≡N symmetrical and asymmetrical vibrational modes of anionic IEICO-4F, thus providing crystal clear evidence for the electron transfer process between the donor and acceptor units. Moreover, photoluminescence (PL) lifetime measurements reveal an approximately 10-fold decrease in the donor lifetime in the presence of IEICO-4F, thereby confirming the efficient electron injection from the perovskite to the acceptor unit. In addition, the efficient electron injection at the FAPbBr3/IEICO-4F interface and its impact on the C≡N bond character are experimentally evidenced and align with density functional theory (DFT) calculations. This work offers new insights into the electron injection process at the FAPbBr3/IEICO-4F interface, which is crucial for developing efficient optoelectronic devices.
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Intermolecular charge transfer (CT) complexes have emerged as versatile platforms with customizable optical properties that play a pivotal role in achieving tunable photoresponsive materials. In this study, we introduce an innovative approach for enhancing the modulation bandwidth and net data rates in optical wireless communications (OWCs) by manipulating combinations of monomeric molecules within intermolecular CT complexes. Concurrently, we extensively investigate the intermolecular charge transfer mechanism through diverse steady-state and ultrafast time-resolved spectral techniques in the mid-infrared range complemented by theoretical calculations using density functional theory. These intermolecular CT complexes empower precise control over the -3 dB bandwidth and net data rates in OWC applications. The resulting color converters exhibit promising performance, achieving a net data rate of â¼100 Mb/s, outperforming conventional materials commonly used in the manufacture of OWC devices. This research underscores the substantial potential of engineering intermolecular charge transfer complexes as an ongoing progression and commercialization within the OWC. This carries profound implications for future initiatives in high-speed and secure data transmission, paving the way for promising endeavors in this area.
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Wafer-scale transfer processes of 2D materials significantly expand their application space in scalable microelectronic devices with excellent and tunable properties through van der Waals (vdW) stacking. Unlike many 2D materials, wafer-scale transfer of MXene films for vdW contact engineering has not yet been reported. With their rich surface chemistry and tunable properties, the transfer of MXenes can enable enormous possibilities in electronic devices using interface engineering. Taking advantage of the MXene hydrophilic surface, a straightforward, green, and fast process for the transfer of MXene films at the wafer scale (4-inch) is developed. Uniform vdW stacking of several types of large-area heterojunctions including MXene/MXene (Ti3C2Tx, Nb2CTx, and V2CTx), MXene/MoS2, and MXene/Au is further demonstrated. Multilayer support is applied to minimize damage or deformation in the transfer process of patterned Ti3C2Tx film. It allows us to fabricate thin film transistors and manipulate the MXene/MoS2 interface through the intercalation of various 2D liquids. Particularly noteworthy is the significant enhancement of the interfacial carrier transfer efficiency by ≈2 orders of magnitude using hydrogen iodide (HI) intercalation. This finding indicates a wide range of possibilities for interface engineering by transferring MXene films and employing liquid-assisted interfacial intercalation.
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We study absorption spectra and two photon absorption coefficient of expanded porphyrins (EPs) by the density matrix renormalization group (DMRG) technique. We employ the Pariser-Parr-Pople (PPP) Hamiltonian which includes long-range electron-electron interactions. We find that, in the 4n+2 EPs, there are two prominent low-lying one-photon excitations, while in 4n EPs, there is only one such excitation. We also find that 4n+2 EPs have large two-photon absorption cross sections compared to 4n EPs. The charge density rearrangement in the one-photon excited state is mostly at the pyrrole nitrogen site and at the meso carbon sites. In the two-photon states, the charge density rearrangement occurs mostly at the aza-ring sites. In the one-photon state, the C-C bond length in aza rings shows a tendency to become uniform. In the two-photon state, the bond distortions are on C-N bonds of the pyrrole ring and the adjoining C-C bonds which connect the pyrrole ring to the aza or meso carbon sites.
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Porfirinas/química , Teoría Cuántica , Estructura Molecular , Fenómenos ÓpticosRESUMEN
X-ray imaging technology is critical to numerous different walks of daily life, ranging from medical radiography and security screening all the way to high-energy physics. Although several organic chromophores are fabricated and tested as X-ray imaging scintillators, they generally show poor scintillation performance due to their weak X-ray absorption cross-section and inefficient exciton utilization efficiency. Here, a singlet fission-based high-performance organic X-ray imaging scintillator with near unity exciton utilization efficiency is presented. Interestingly, it is found that the X-ray sensitivity and imaging resolution of the singlet fission-based scintillator are dramatically improved by an efficient energy transfer from a thermally activated delayed fluorescence (TADF) sensitizer, in which both singlet and triplet excitons can be efficiently harnessed. The fabricated singlet fission-based scintillator exhibits a high X-ray imaging resolution of 27.5 line pairs per millimeter (lp mm-1 ), which exceeds that of most commercial scintillators, demonstrating its high potential use in medical radiography and security inspection.
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X-ray imaging scintillators play a crucial role in medical examinations and safety inspections, making them an essential technology in our modern lives. However, commercially available high-performance scintillators are fabricated exclusively from ceramic materials that require harsh preparation conditions and are costly to produce. Organic scintillators have emerged as a promising alternative due to their transparency and ease of fabrication at a low cost. Unfortunately, organic scintillators suffer from inefficient exciton utilization efficiency, leading to poor performance in X-ray imaging screens and hindering their commercialization. In this study, we explore the use of thermally activated delayed fluorescence (TADF) chromophores (4CzIPN-I and 4CzTPN) to enhance the absorption of ionizing radiation in X-ray imaging screens by an order of magnitude. By leveraging the unique features of TADF chromophores through simultaneously singlet-singlet and triplet-triplet efficient energy transfers at the interface between two different TADF systems, we demonstrate an impressive X-ray sensitivity and radioluminescence intensity. Our time-resolved experiments and density functional theory (DFT) calculations provide further evidence for the effectiveness of this approach. The resulting X-ray imaging screens based on this efficient interfacial energy transfer process in TADF systems exhibit outstanding X-ray imaging resolution of 20 line pairs/mm, the highest resolution reported thus far for organic scintillators. This resolution is at least two times higher than that achieved by commonly used commercial inorganic scintillators in the X-ray imaging market. These findings introduce a new component for greatly improving the performance of organic X-ray imaging scintillators, supporting a wide range of emerging X-ray applications with exceptional spatial resolution.
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Nano-heterostructures have attracted immense attention recently due to their remarkable interfacial properties determined by the heterointerface of different nanostructures. Here, using first-principles density functional theory (DFT) calculations, we examine what range the variable electronic properties such as the electronic band gap can be tuned by combining two dissimilar nanostructures consisting of atomically thin nanostructured MoS2 clusters with small silver and gold nanoparticles (Ag/Au NPs). Most interestingly, our calculations show that the electronic band gap of the nanostructured MoS2 cluster can be tuned from 2.48 to 1.58 and 1.61 eV, by the formation of heterostructures with silver and gold metal nanoclusters, respectively. This band gap is ideal for various applications ranging from flexible nanoelectronics to nanophotonics applications. Furthermore, the adsorption of H2 molecules on both nano-heterostructures is investigated, and the computed binding energies are found to be within the desirable range. The reported theoretical results provide inspiration for engineering various optoelectronic applications for nanostructured MoS2-based heterostructures.
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While the search for 2D organic semimetallic Dirac materials displaying, like graphene, a Dirac cone at the Fermi level remains active, attention is also being paid to the quantum phase transition from semimetal to antiferromagnet. Such a transition in graphene-like materials is predicted based on theoretical investigations of the 2D honeycomb lattice; it occurs (within a Hubbard model) when the on-site electron-electron Coulomb repulsion (U) is much larger than the nearest-neighbor inter-site electronic coupling (t). Here, monomers carrying long-lived radicals are considered and used as building blocks to design 2D hexagonal π-conjugated covalent organic frameworks (COFs). Both the nonmagnetic semimetallic phase and magnetically ordered phases are evaluated. It is found that the electronic coupling between adjacent radical centers in these COFs is more than an order of magnitude smaller than in graphene while the on-site Coulomb repulsion is reduced to a lesser extent. The resulting large U/t ratio drives these COFs into the antiferromagnetic side of the phase diagram. This work provides a first theoretical evidence of the realization of an antiferromagnetic Mott insulating phase in 2D π-conjugated COFs and allows a strategy to achieve quantum phase transitions from antiferromagnet to spin liquid and to semimetal to be outlined.
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An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.
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n-Type doping of mixed single- and double-layer graphene grown by chemical vapor deposition (CVD) using decamethyl-cobaltocene reveals a local-quasilinear relationship between the work function and the logarithm of the dopant solution concentration. The relationship that arises from bandgap opening is deduced by comparing the relationship between the two factors for single- or double-layer graphene. This work has extensive applicability and practical significance in doping CVD-grown graphene.