Improving Thin-Film Properties of Poly(vinyl alcohol) by the Addition of Low-Weight Percentages of Cellulose Nanocrystals.

The increased demand for electronic devices, combined with a desire to minimize the environmental impact, necessitates the development of new eco-friendly materials. One promising approach is the incorporation of renewable and green materials that possess the desired mechanical and electrical properties while allowing for more ecologically friendly disposal of these devices. The addition of low-weight percentages (0.25-0.75 wt %) of cellulose nanocrystals (CNCs) was investigated as an environmentally friendly additive in aqueous dispersions of poly(vinyl alcohol) (PVA). It was found that these low CNC loadings were sufficient to induce a favorable increase in viscosity, which in turn dramatically enhanced the film quality of the PVA blends through an improvement in the critical radius of the spun film, overall film thickness, and homogeneity of the thin film. This corresponded to an increase in the number of functioning organic electronic devices that could be fabricated by spin coating, including metal-insulator-metal (MIM) capacitors and organic thin-film transistors (OTFTs). Most importantly, the incorporation of CNCs into PVA did not significantly alter the native dielectric properties of the polymer thin films when incorporated into both MIM capacitors and OTFTs.

Interfacial Ultraviolet Cross-Linking of Green Bilayer Dielectrics.

Electronic waste is a growing challenge which needs to be addressed through the integration of high-performance sustainable materials. Green dielectric polymers such as poly(vinyl alcohol) (PVA) have favorable electrical properties but are challenging to integrate into thin film electronics due to their physical properties. For example, PVA suffers from poor film formation and is hygroscopic. Bilayer dielectrics with interfacial cross-linking can enable the use of high-performance PVA with favorable surface chemistry by using a hydrophobic poly(caprolactone) (PCL) layer. In this study, we developed a benzodioxinone-terminated PCL layer, which can be UV cross-linked to the hydroxy groups of the PVA dielectric. This air-stable UV-cross-linking PCL dielectric was able to effectively cross-link with PVA, leading to high-performance capacitors and single-walled carbon nanotube-based thin film transistors. This UV cross-linking PCL dielectric led to significant improvements in shelf-life, ease of processing, and similar device performance compared to our previously reported thermally cross-linking PCL layer. The UV cross-linking at the interface between these bilayers can allow for the integration of high-speed roll-to-roll processing, which enables low-cost, sustainable, and high-performance electronics.

Poly(ionic liquid) Gating Materials for High-Performance Organic Thin-Film Transistors: The Role of Block Copolymer Self-Assembly at the Semiconductor Interface.

The widespread realization of wearable electronics requires printable active materials capable of operating at low voltages. Polymerized ionic liquid (PIL) block copolymers exhibit a thickness-independent double-layer capacitance that makes them a promising gating medium for the development of organic thin-film transistors (OTFTs) with low operating voltages and high switching speed. PIL block copolymer structure and self-assembly can influence ion conductivity and the resulting OTFT performance. In an OTFT, self-assembly of the PIL gate on the semiconducting polymer may differ from bulk self-assembly, which would directly influence electrical double-layer formation. To this end, we used poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) as a model semiconductor for our OTFTs, on which our PILs exhibited self-assembly. In this study, we explore this critical interface by grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy (AFM) of P(NDI2OD-T2) and a series of poly(styrene)-b-poly(1-(4-vinylbenzyl)-3-butylimidazolium-random-poly(ethylene glycol) methyl ether methacrylate) (poly(S)-b-poly(VBBI+[X]-r-PEGMA)) block copolymers with varying PEGMA/VBBI+ ratios and three different mobile anions (where X = TFSI-, PF6-, or BF4-). We investigate the thin-film self-assembly of block copolymers as a function of device performance. Overall, a mixed orientation at the interface leads to improved device performance, while predominantly hexagonal packing leads to nonfunctional devices, regardless of the anion present. These PIL gated OTFTs were characterized with a threshold voltage below 1 V, making understanding of their structure-property relationships crucial to enabling the further development of high-performance gating materials.

Excess Polymer in Single-Walled Carbon Nanotube Thin-Film Transistors: Its Removal Prior to Fabrication Is Unnecessary.

Ultrapure semiconducting single-walled carbon nanotube (sc-SWNT) dispersions produced through conjugated polymer sorting are ideal candidates for the fabrication of solution-processed organic electronic devices on a commercial scale. Protocols for sorting and dispersing ultrapure sc-SWNTs with conjugated polymers for thin-film transistor (TFT) applications have been well refined. Conventional wisdom dictates that removal of excess unbound polymer through filtration or centrifugation is necessary to produce high-performance TFTs. However, this is time-consuming, wasteful, and resource-intensive. In this report, we challenge this paradigm and demonstrate that excess unbound polymer during semiconductor film fabrication is not necessarily detrimental to device performance. Over 1200 TFT devices were fabricated from 30 unique polymer-sorted SWNT dispersions, prepared using two different alternating copolymers. Detailed Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) studies of the random-network semiconductor films demonstrated that a simple solvent rinse during TFT fabrication was sufficient to remove unbound polymer from the sc-SWNT films, thus eliminating laborious polymer removal before TFT fabrication. Furthermore, below a threshold polymer concentration, the presence of excess polymer during fabrication did not significantly impede TFT performance. Preeminent performance was achieved for devices prepared from native polymer-sorted SWNT dispersions containing the "original" amount of excess unbound polymer (immediately following enrichment). Lastly, we developed an open-source Machine Learning algorithm to quantitatively analyze AFM images of SWNT films for surface coverage, number of tubes, and tube alignment.

Controlled Synthesis of Poly(pentafluorostyrene-ran-methyl methacrylate) Copolymers by Nitroxide Mediated Polymerization and Their Use as Dielectric Layers in Organic Thin-film Transistors.

A library of statistically random pentafluorostyrene (PFS) and methyl methacrylate (MMA) copolymers with narrow molecular weight distributions was produced, using nitroxide mediated polymerization (NMP) to study the effect of polymer composition on the performance of bottom-gate top-contact organic thin-film transistors, when utilized as the dielectric medium. Contact angle measurements confirmed the ability to tune the surface properties of copolymer thin films through variation of its PFS/MMA composition, while impedance spectroscopy determined the effect of this variation on dielectric properties. Bottom-gate, top-contact copper phthalocyanine (CuPc) based organic thin-film transistors were fabricated using the random copolymers as a dielectric layer. We found that increasing the PFS content led to increased field-effect mobility, until a point after which the CuPc no longer adhered to the polymer dielectric.