The Role of Interdigitated Electrodes in Printed and Flexible Electronics.

Flexible electronics, also referred to as printable electronics, represent an interesting technology for implementing electronic circuits via depositing electronic devices onto flexible substrates, boosting their possible applications. Among all flexible electronics, interdigitated electrodes (IDEs) are currently being used for different sensor applications since they offer significant benefits beyond their functionality as capacitors, like the generation of high output voltage, fewer fabrication steps, convenience of application of sensitive coatings, material imaging capability and a potential of spectroscopy measurements via electrical excitation frequency variation. This review examines the role of IDEs in printed and flexible electronics since they are progressively being incorporated into a myriad of applications, envisaging that the growth pattern will continue in the next generations of flexible circuits to come.

Radio-frequency induced heating of intra-cranial EEG electrodes: The more the colder?

Many neurological disorders are analyzed and treated with implantable electrodes. Many patients with such electrodes have to undergo MRI examinations - often unrelated to their implant - at the risk of radio-frequency induced heating. The number of electrode contact sites of these implants keeps increasing due to improvements in manufacturing and computational algorithms. Electrode grids with multiple receive channels couple to the RF fields present in MRI, but, due to their proximity, a combination of leads has a coupling response which is not a superposition of the individual leads' response. To investigate the problem of RF-induced heating of coupled multi-lead implants, temperature mapping was performed on a set of intra-cranial electroencephalogram (icEEG) electrode grid prototypes with increasing number of contact sites (1-16). Additionally, electric field measurements were used to investigate the radio-frequency heating characteristics of the implants in different media combinations, simulating the device being partially immersed inside the patient. MR measurements show RF-induced heating up to 19.6 K for the single electrode, reducing monotonically with larger number of contact sites to a minimum of 0.9 K for the largest grid. The SAR calculated from temperature measurements agrees well with electric field mapping: The same trend is visible for different insertion lengths, however, the energy dissipated by the whole implant varies with the grid size and insertion length. Thus, in the tested circumstances, a larger electrode number either reduced or had a similar risk of RF induced heating, indicating, that the size of electrode grids is a design parameter, which can be used to change an implants RF response and in turn to reduce the risk of RF induced heating and improve the safety of patient with neuro-implants undergoing MRI examinations.

It's the little things: On the complexity of planar electrode heating in MRI.

Neurological disorders are increasingly analysed and treated with implantable electrodes, and patients with such electrodes are studied with MRI despite the risk of radio-frequency (RF) induced heating during the MRI exam. Recent clinical research suggests that electrodes with smaller diameters of the electrical interface between implant and tissue are beneficial; however, the influence of this electrode contact diameter on RF-induced heating has not been investigated. In this work, electrode contact diameters between 0.3 and 4 mm of implantable electrodes appropriate for stimulation and electrocorticography were evaluated in a 1.5 T MRI system. In situ temperature measurements adapted from the ASTM standard test method were performed and complemented by simulations of the specific absorption rate (SAR) to assess local SAR values, temperature increase and the distribution of dissipated power. Measurements showed temperature changes between 0.8 K and 53 K for different electrode contact diameters, which is well above the legal limit of 1 K. Systematic errors in the temperature measurements are to be expected, as the temperature sensors may disturb the heating pattern near small electrodes. Compared to large electrodes, simulations suggest that small electrodes are subject to less dissipated power, but more localized power density. Thus, smaller electrodes might be classified as safe in current certification procedures but may be more likely to burn adjacent tissue. To assess these local heating phenomena, smaller temperature sensors or new non-invasive temperature sensing methods are needed.

A 3D Faraday Shield for Interdigitated Dielectrometry Sensors and Its Effect on Capacitance.

Interdigitated dielectrometry sensors (IDS) are capacitive sensors investigated to precisely measure the relative permittivity ( ϵ r ) of insulating liquids. Such liquids used in the power industry exhibit a change in ϵ r as they degrade. The IDS ability to measure ϵ r in-situ can potentially reduce maintenance, increase grid stability and improve safety. Noise from external electric field sources is a prominent issue with IDS. This paper investigates the novelty of applying a Faraday cage onto an IDS as a 3D shield to reduce this noise. This alters the spatially distributed electric field of an IDS affecting its sensing properties. Therefore, dependency of the sensor's signal with the distance to a shield above the IDS electrodes has been investigated experimentally and theoretically via a Green's function calculation and FEM. A criteria of the shield's distance s = s 0 has been defined as the distance which gives a capacitance for the IDS equal to 1 - e - 2 = 86.5 % of its unshielded value. Theoretical calculations using a simplified geometry gave a constant value for s 0 / λ = 1.65, where λ is the IDS wavelength. In the experiment, values for s 0 were found to be lower than predicted as from theory and the ratio s 0 / λ variable. This was analyzed in detail and it was found to be resulting from the specific spatial structure of the IDS. A subsequent measurement of a common insulating liquid with a nearby noise source demonstrates a considerable reduction in the standard deviation of the relative permittivity from σ unshielded = ± 9.5% to σ shielded = ± 0.6%. The presented findings enhance our understanding of IDS in respect to the influence of a Faraday shield on the capacitance, parasitic capacitances of the IDS and external noise impact on the measurement of ϵ r .

Sodium concentration imaging in dermis layer by square-wave open electrical impedance tomography (SW-oEIT) with spatial voltage thresholding (SVT).

In this study, sodium concentration in the dermis layer is imaged by the square wave open electrical impedance tomography (SW-oEIT) with spatial voltage thresholding (SVT). The SW-oEIT with SVT consists of three steps which are (1) voltage measurement, (2) spatial voltage thresholding, and (3) sodium concentration imaging. In the 1st step, the root mean square voltagevis calculated based on the measured voltagevunder the square wave currentIthrough the planar electrodes on the skin domain Ω. In the 2nd step, them-th measured voltagevis converted to a compensated voltagev*based on the voltage electrodes distancedvand threshold distancedΓin order to highlight the region of interest of the dermis layerΩd.In the 3rd step, sodium concentration is imaged by the Gauss-Newton reconstruction method. The SW-oEIT with SVT was applied to multi-layer skin simulation andex-vivoexperiments under various dermis sodium concentrationscin the range of 5-50 mM. As an image evaluation result, the spatial mean conductivity distributionσ*inΩdis successfully determined as increasingcon both simulations and experiments. The relationship between〈σ*〉andcwas evaluated by the determination coefficientR2and the normalized sensitivity〈S〉.The optimizeddΓwith the highest evaluation values ofR2=0.84 and〈S〉=0.83 is under the condition ofdΓ= 2 mm. Based on the signal evaluation, the SW-oEIT with SVT has a 15.32% higher correlation coefficientCCcompared to the conventionaloEIT based on sinewave injection.