The Strain Effects and Interfacial Defects of Large ZnSe/ZnS Core/Shell Nanocrystals.

The shell growth of large ZnSe/ZnS nanocrystals( is of great importance in the pursuit of pure-blue emitters for display applications, however, suffers from the challenges of spectral blue-shifts and reduced photoluminescence quantum yields. In this work, the ZnS shell growth on different-sized ZnSe cores is investigated. By controlling the reactivity of Zn and S precursors, the ZnS shell growth can be tuned from defect-related strain-released to defect-free strained mode, corresponding to the blue- and red-shifts of resultant nanocrystals respectively. The shape of strain-released ZnSe/ZnS nanocrystals can be kept nearly spherical during the shell growth, while the shape of strained nanocrystals evolutes from spherical into island-like after the critical thickness. Furthermore, the strain between ZnSe core and ZnS shell can convert the band alignment from type-I into type-II core/shell structure, resulting in red-shifts and improved quantum yield. By correlating the strain effects with interfacial defects, a strain-released shell growth model is proposed to obtain large ZnSe/ZnS nanocrystals with isotropic shell morphology.

Tuning Hot Carrier Dynamics of InP/ZnSe/ZnS Quantum Dots by Shell Morphology Control.

Isotropic InP/ZnSe/ZnS quantum dots (QDs) are prepared at a high reaction temperature, which facilitates ZnSe shell growth on random facets of the InP core. Fast crystal growth enables stacking faults elimination, which induces anisotropic growth, and as a result, improves the photoluminescence (PL) quantum yield by nearly 20%. Herein, the effect of the QD morphology on photophysical properties is investigated by observing the PL blinking and ultrafast charge carrier dynamics. It is found that hot hole trapping is considerably suppressed in isotropic InP QDs, indicating that the stacking faults in the anisotropic InP/ZnSe structures act as defects for luminescence. These results highlight the importance of understanding the correlation between QD shapes and hot carrier dynamics, and present a way to design highly luminescent QDs for further promising display applications.

Bulk-like ZnSe Quantum Dots Enabling Efficient Ultranarrow Blue Light-Emitting Diodes.

Blue-emitting heavy-metal free QDs simultaneously exhibiting photoluminescence quantum yield close to unity and narrow emission line widths are essential for next-generation electroluminescence displays, yet their synthesis is highly challenging. Herein, we develop the synthesis of blue-emitting QDs by growing a thin shell of ZnS on ZnSe cores with their size larger than bulk Bohr diameter. The bulk-like size of ZnSe cores enables the emission to locate in the blue region with a narrow emission width close to its intrinsic peak width. The obtained bulk-like ZnSe/ZnS core/shell QDs display high quantum yield of 95% and extremely narrow emission width of ∼9.6 nm. Moreover, the bulk-like size of ZnSe cores reduces the energy level difference between QDs and adjacent layers in LEDs and improves charge transport. The LEDs fabricated with these high-quality QDs show bright pure blue emission with an external quantum efficiency of 12.2% and a relatively long operating lifetime.

Negative Trion Auger Recombination in Highly Luminescent InP/ZnSe/ZnS Quantum Dots.

Upon demonstrating self-luminescing quantum dot based light-emitting devices (QD-LEDs), rapid Auger recombination acts as one of the performance limiting factors. Here, we report the Auger processes of highly luminescent InP/ZnSe/ZnS QDs with different midshell structures that affect the performances of QD-LEDs. Transient PL measurements reveal that exciton-exciton binding energy is dependent on the midshell thickness, which implies that the intercarrier Coulomb interaction caused by the introduction of excess charges may come under the influence of midshell thickness which is in contrast with the nearly stationary single exciton behavior. Photochemical electron-doping and optical measurements of a single QD show that negative trion Auger recombination exhibits strong correlation with midshell thickness, which is supported by the dynamics of a hot electron generated in the midshell. These results highlight the role of excess electrons and the effects of engineered shell structures in InP/ZnSe/ZnS QDs, which eventually determine the Auger recombination and QD-LED performances.

Increasing the Energy Gap between Band-Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots.

Non-toxic InP-based nanocrystals have been developed for promising candidates for commercial optoelectronic applications and they still require further improvement on photophysical properties, compared to Cd-based quantum dots (QDs), for better device efficiency and long-term stability. It is, therefore, essential to understand the precise mechanism of carrier trapping even in the state-of-the-art InP-based QD with near-unity luminescence. Here, it is shown that using time-resolved spectroscopic measurements of systematically size-controlled InP/ZnSe/ZnS core/shell/shell QDs with the quantum yield close to one, carrier trapping decreases with increasing the energy difference between band-edge and trap states, indicating that the process follows the energy gap law, well known in molecular photochemistry for nonradiative internal conversion between two electronic states. Similar to the molecular view of the energy gap law, it is found that the energy gap between the band-edge and trap states is closely associated with ZnSe phonons that assist carrier trapping into defects in highly luminescent InP/ZnSe/ZnS QDs. These findings represent a striking departure from the generally accepted view of carrier trapping mechanism in QDs in the Marcus normal region, providing a step forward understanding how excitons in nanocrystals interact with traps, and offering valuable guidance for making highly efficient and stable InP-based QDs.

ZnSe/ZnS Core/Shell Quantum Dots with Superior Optical Properties through Thermodynamic Shell Growth.

Epitaxial growth of a protective semiconductor shell on a colloidal quantum dot (QD) core is the key strategy for achieving high fluorescence quantum efficiency and essential stability for optoelectronic applications and biotagging with emissive QDs. Herein we investigate the effect of shell growth rate on the structure and optical properties in blue-emitting ZnSe/ZnS QDs with narrow emission line width. Tuning the precursor reactivity modifies the growth mode of ZnS shells on ZnSe cores transforming from kinetic (fast) to thermodynamic (slow) growth regimes. In the thermodynamic growth regime, enhanced fluorescence quantum yields and reduced on-off blinking are achieved. This high performance is ascribed to the effective avoidance of traps at the interface between the core and the shell, which are detrimental to the emission properties. Our study points to a general strategy to obtain high-quality core/shell QDs with enhanced optical properties through controlled reactivity yielding shell growth in the thermodynamic limit.

Highly Stable Biotemplated InP/ZnSe/ZnS Quantum Dots for In Situ Bacterial Monitoring.

Despite their unique optical and electrical characteristics, traditional semiconductor quantum dots (QDs) made of heavy metals or carbon are not ideally suited for biomedical applications. Cytotoxicity and environmental concerns are key limiting factors affecting the adoption of QDs from laboratory research to real-world medical applications. Recently, advanced InP/ZnSe/ZnS QDs have emerged as alternatives to traditional QDs due to their low toxicity and optical properties; however, bioconjugation has remained a challenge due to surface chemistry limitations that can lead to instability in aqueous environments. Here, we report water-soluble, biotemplated InP/ZnSe/ZnS-aptamer quantum dots (QDAPTs) with long-term stability and high selectivity for targeting bacterial membrane proteins. QDAPTs show fast binding reaction kinetics (less than 5 min), high brightness, and high levels of stability (3 months) after biotemplating in aqueous solvents. We use these materials to demonstrate the detection of bacterial membrane proteins on common surfaces using a hand-held imaging device, which attests to the potential of this system for biomedical applications.

A Novel Strategy to Enhance the Photostability of InP/ZnSe/ZnS Quantum Dots with Zr Doping.

Plentiful research of InP semiconductor quantum dots (QDs) has been launched over the past few decades for their excellent photoluminescence properties and environmentally friendly characteristics in various applications. However, InP QDs show inferior photostability because they are extremely sensitive to the ambient environment. In this study, we propose a novel method to enhance the photostability of InP/ZnSe/ZnS QDs by doping zirconium into the ZnS layer. We certify that Zr can be oxidized to Zr oxides, which can prevent the QDs from suffering oxidation during light irradiation. The InP/ZnSe/ZnS:Zr QDs maintained 78% of the original photoluminescence quantum yields without significant photodegradation under the irradiation of LED light (450 nm, 3.0 W power intensity) for 14 h, while conventional InP/ZnSe/ZnS QDs dramatically decreased to 29%.

Ultrafast Charge Carrier Dynamics in InP/ZnSe/ZnS Core/Shell/Shell Quantum Dots.

The excellent performance of InP/ZnSe/ZnS core/shell/shell quantum dots (CSS-QDs) in light-emitting diodes benefits from the introduction of a ZnSe midshell. Understanding the changes of ultrafast carrier dynamics caused by the ZnSe midshell is important for their optoelectronic applications. Herein, we have compared the ultrafast carrier dynamics in CSS-QDs and InP/ZnS core/shell QDs (CS-QDs) using femtosecond transient absorption spectroscopy. The results show that the ZnSe midshell intensifies the electron delocalization and prolongs the in-band relaxation time of electrons from 238 fs to 350 fs, and that of holes from hundreds of femtoseconds to 1.6 ps. We also found that the trapping time caused by deep defects increased from 25.6 ps to 76 ps, and there were significantly reduced defect emissions in CSS-QDs. Moreover, the ZnSe midshell leads to a significantly increased density of higher-energy hole states above the valence band-edge, which may reduce the probability of Auger recombination caused by the positive trion. This work enhances our understanding of the excellent performance of the CSS-QDs applied to light-emitting diodes, and is likely to be helpful for the further optimization and design of optoelectronic devices based on the CSS-QDs.

Toxic effects of ZnSe/ZnS quantum dots on the reproduction and genotoxiticy of rare minnow (Gobiocypris rarus).

ZnSe/ZnS quantum dots (QDs) have excellent optical properties, but researchers have not clearly determined whether they cause harm to organisms. In the present study, the effect of ZnSe/ZnS QDs on the parents and offspring of rare minnow were evaluated for the first time. Exposure to ZnSe/ZnS QDs altered the testicular structure, caused sperm DNA damage and decreased sperm motility in males. They also suppressed the expression of reproduction-related genes, such as androgen receptor (Ar), DM-related transcription factor 1 (Dmrt1), estrogen receptor (Er), and X-ray repair cross complementing gene 1 (Xrcc1). Continued monitoring of the F1 generation revealed that the embryonic development of the F1 generation was abnormal and the growth index of the F1 generation of adult fish showed hormesis. A comet assay showed that the F1 generation still had DNA damage in the 400 and 800 nmol/L groups at 96 h post-fertilization (hpf). Thus, ZnSe/ZnS QDs damaged the reproductive system of the rare minnow, and this effect continued to the F1 generation.

Novel synthesis of Mn: ZnSe@ZnS core-shell quantum dots based on photoinduced fluorescence enhancement.

A novel Type-I Mn: ZnSe@ZnS core-shell quantum dots (QDs) was reported through a two-step procedure by using low-cost inorganic salts and naturalbiomacromolecule as raw materials. Based on a designed structure of L-cysteine-capped Mn: ZnSe QDs in aqueous media with the controllable surface, Mn: ZnSe@ZnS core-shell QDs were formed due to photoactive ions and defect curing under continuous constant light. The influences of experimental variables, including synthesis conditions of Mn: ZnSe QDs, different types and affecting factors of photo irradiation had been systematically investigated. Under the effect of photoinduced fluorescence enhancement, the photoluminescence (PL) intensity increases significantly by about 5-10 times after 1-3 h of UV irradiation. The position of the fluorescence peak was red-shifted by about 17 nm, emitting orange-red fluorescence. The photoluminescence quantum yield (PL QY) was markedly improved (up to 35%). The structure and morphology of Mn: ZnSe@ZnS core-shell QDs were also confirmed by Fourier transform infrared spectroscopy (FTIR), X-ray powder diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS) in detail. The mechanism of photoinduced fluorescence enhancement was attributed to L-cysteine allowed to release S2- to form a ZnS shell, and the passivated surface non-radiative relaxation centers of Mn: ZnSe@ZnS QDs was successfully synthesized with highuniform size, excellent photoluminescence performance, and good stability, all ofwhichmakethemgood potential candidates for white LEDs, and biological labels.

Flexible Memristive Devices Based on InP/ZnSe/ZnS Core-Multishell Quantum Dot Nanocomposites.

The effects of the ZnS shell layer on the memory performances of flexible memristive devices based on quantum dots (QDs) with an InP/ZnSe/ZnS core-multishell structure embedded in a poly(methylmethacrylate) layer were investigated. The on/off ratios of the devices based on QDs with an InP/ZnSe core-shell structure and with an InP/ZnSe/ZnS core-multishell structure were approximately 4.2 × 102 and 8.5 × 103, respectively, indicative of enhanced charge storage capability in the latter. After bending, the memory characteristics of the memristive devices based on QDs with the InP/ZnSe/ZnS structure were similar to those before bending. In addition, those devices maintained the same on/off ratios for retention time of 1 × 104 s, and the number of endurance cycles was above 1 × 102. The reset voltages ranged from -2.3 to -3.1 V, and the set voltages ranged from 1.3 to 2.1 V, indicative of reliable electrical characteristics. Furthermore, the possible operating mechanisms of the devices are presented on the basis of the electron trapping and release mode.

High sensitive detection method for protein by combining the magnetic separation with cation exchange based signal amplification.

PSA is a member of low abundance proteins and serves as a critical indicator of the development and therapy efficacy for prostate cancer. In this study, a facile and high sensitive method was developed for serum PSA detection by integrating the immunomagnetic separation and cation exchange based signal amplification. On the basis of nanoparticle preparation and immunoprobe construction, PSA in serum was captured, separated by the immunomagnetic probe and then interacted with the quantum dots (QDs) based immunofluorescence probe; Zn2+ inside QDs was replaced by Ag+ within seconds, after which fluorescence signal was amplified by Fluozin-3, the Zn2+ responsive dye. Under optimized conditions, low detection limit (1.56pg/mL), wide linear range (1.56-25ng/mL) and good repeatability (intra-coefficient variation=3.18%) were achieved, which is superior to commercialized ELISA kit. These results demonstrated the potential of our high sensitive method for PSA detection in clinical.

Fluorescence resonance energy transfer between ZnSe ZnS quantum dots and bovine serum albumin in bioaffinity assays of anticancer drugs.

In the current work, using ZnSe ZnS quantum dots (QDs) as representative nanoparticles, the affinities of seven anticancer drugs for bovine serum albumin (BSA) were studied using fluorescence resonance energy transfer (FRET). The FRET efficiency of BSA-QD conjugates can reach as high as 24.87% by electrostatic interaction. The higher binding constant (3.63×10(7)Lmol(-1)) and number of binding sites (1.75) between ZnSe ZnS QDs and BSA demonstrated that the QDs could easily associate to plasma proteins and enhance the transport efficacy of drugs. The magnitude of binding constants (10(3)-10(6)Lmol(-1)), in the presence of QDs, was between drugs-BSA and drugs-QDs in agreement with common affinities of drugs for serum albumins (10(4)-10(6)Lmol(-1)) in vivo. ZnSe ZnS QDs significantly increased the affinities for BSA of Vorinostat (SAHA), Docetaxel (DOC), Carmustine (BCNU), Doxorubicin (Dox) and 10-Hydroxycamptothecin (HCPT). However, they slightly reduced the affinities of Vincristine (VCR) and Methotrexate (MTX) for BSA. The recent work will not only provide useful information for appropriately understanding the binding affinity and binding mechanism at the molecular level, but also illustrate the ZnSe ZnS QDs are perfect candidates for nanoscal drug delivery system (DDS).

Systematic investigation of the toxicity interaction of ZnSe@ZnS QDs on BSA by spectroscopic and microcalorimetry techniques.

The interaction of ZnSe@ZnS quantum dots (QDs) and bovine serum albumin (BSA) was investigated by means of fluorescence (FL) spectrometry, circular dichroism (CD) spectra, and isothermal titration calorimetry (ITC). The fluorescence intensity of BSA decreased regularly with the increasing of QDs concentration. The decrease of BSA fluorescence intensity was proved to be a kind of static quenching. CD results show the helicity of BSA decreased from 38.04% to 26.51% with the addition of QDs, which suggests a stronger structural change that is related to a low degree of surface coverage. And also, both ion strength and pH value could affect the interaction between BSA and QDs, suggesting that both the static electronic attraction and H-bond contribute to the interaction between BSA and QDs. The thermodynamics of interaction between BSA and QDs were calculated from ITC data. Both enthalpy and entropy changes were favorable for the interaction in Tris-buffer, while only enthalpy change was favorable for the interaction in NaCl or HCl solution.