RESUMEN
Inverted perovskite solar cells (PSCs) are considered as the most promising avenue for the commercialization of PSCs due to their potential inherent stability. However, suboptimal interface contacts between electron transport layer (ETL) (such as C60) and the perovskite absorbing layer within inverted PSCs always result in reduced efficiency and poor stability. Herein, a surface state manipulation strategy has been developed by employing a highly electronegative 4-fluorophenethylamine hydrochloride (p-F-PEACl) to effectively address the issue of poor interface contacts in the inverted PSCs. The p-F-PEACl demonstrates a robust interaction with perovskite film through bonding of amino group and Cl- with I- and Pb2+ ions in the perovskite, respectively. As such, the surface defects of perovskite film can be significantly reduced, leading to suppressed non-radiative recombination. Moreover, p-F-PEACl also plays a dual role in enhancing the surface potential and improving energy-level alignment at the interfaces between the perovskite and C60 carrier transport layer, which directly contributes to efficient charge extraction. Finally, the open-circuit voltage (Voc) of devices increases from 1.104 V to 1.157 V, leading to an overall efficiency improvement from 22.34% to 24.78%. Furthermore, the p-F-PEACl-treated PSCs also display excellent stability.
RESUMEN
Targeted treatment of the interface between electron transport layers (ETL) and perovskite layers is highly desirable for achieving passivating effects and suppressing carrier nonradiative recombination, leading to high performance and long-term stability in perovskite solar cells (PSCs). In this study, a series of non-fullerene acceptors (NFAs, Y-H, Y-F, and Y-Cl) are introduced to optimize the properties of the perovskite/ETL interface. This optimization involves passivating Pb2+ defects, releasing stress, and modulating carrier dynamics through interactions with the perovskite. Remarkably, after modifying with NFAs, the absorption range of perovskite films into the near-infrared region is extended. As expected, Y-F, with the largest electrostatic potential, facilitates the strongest interaction between the perovskite and its functional groups. Consequently, champion power conversion efficiencies of 21.17%, 22.21%, 23.25%, and 22.31% are achieved for control, Y-H-, Y-F-, and Y-Cl-based FA0.88Cs0.12PbI2.64Br0.36 (FACs) devices, respectively. This treatment also enhances the heat stability and air stability of the corresponding devices. Additionally, these modifier layers are applied to enhance the efficiency of Cs0.05(FA0.95MA0.05)0.95PbI2.64Br0.36 (FAMA) devices. Notably, a champion PCE exceeding 24% is achieved in the Y-F-based FAMA device. Therefore, this study provides a facile and effective approach to target the interface, thereby improving the efficiency and stability of PSCs.
RESUMEN
Nickel oxide (NiOx) is a promising hole transport layer (HTL) to fabricate efficient and large-scale inverted perovskite solar cells (PSCs) due to its low cost and superior chemical stability. However, inverted PSCs based on NiOx are still lagging behind that of other HTL because of the poor quality of buried interface contact. Herein, a bidentate ligand, 4,6-bis (diphenylphosphino) phenoxazine (2DPP), is used to regulate the NiOx surface and perovskite buried interface. The diphosphine Lewis base in the 2DPP molecule can coordinate both with NiOx and lead ions at NiOx/perovskite interface, leading to high-quality perovskite films with minimized defects. It is found that the inverted PSCs with 2DPP-modified buried interface exhibit double advantages of being both fast charge extraction and reduced nonradiative recombination, which is a combination of multiple factors including favorable energetic alignment, improved interface contact and strong binding between NiOx/2DPP and perovskite. The optimal PSC based on 2DPP modification yields a champion power conversion efficiency (PCE) of 21.9%. The unencapsulated PSC maintains above 75% of its initial PCE in the air with a relative humidity (RH) of 30-40% for 1000 h.
RESUMEN
Considering the direct influence of substrate surface nature on perovskite (PVK) film growth, buried interfacial engineering is crucial to obtain ideal perovskite solar cells (PSCs). Herein, 1-(3-aminopropyl)-imidazole (API) is introduced at polytriarylamine (PTAA)/PVK interface to modulate the bottom property of PVK. First, the introduction of API improves the growth of PVK grains and reduces the Pb2+ defects and residual PbI2 present at the bottom of the film, contributing to the acquisition of high-quality PVK film. Besides, the presence of API can optimize the energy structure between PVK and PTAA, which facilitates the interfacial charge transfer. Density functional theory (DFT) reveals that the electron donor unit (R-C â N) of the API prefers to bind with Pb2+ traps at the PVK interface, while the formation of hydrogen bonds between the R-NH2 of API and I- strengthens the above binding ability. Consequently, the optimum API-treated inverted formamidinium-cesium (FA/Cs) PSCs yields a champion power conversion efficiency (PCE) of 22.02% and exhibited favorable stability.
RESUMEN
The quality of the buried heterojunction of nickel oxide (NiOX)/perovskite is crucial for efficient charge carrier extraction and minimizing interfacial non-radiative recombination in inverted perovskite solar cells (PSCs). However, NiOX has limitations as a hole transport layer (HTL) due to energy level mismatch, low conduction, and undesirable redox reactions with the perovskite layer, which impede power conversion efficiency (PCE) and long-term stability. In this study, para-amino 2,3,5,6-tetrafluorobenzoic acid (PATFBA) is proposed as a bifacial defect passivator to tailor the NiOX/perovskite interface. The acid group and adjacent fluorine atoms of PATFBA effectively passivate NiOX surface defects, thereby improving its Ni3+/Ni2+ ratio, hole extraction capability, and energy band alignment with perovskite, while also providing active sites for homogenous nucleation. Meanwhile, the amine and adjacent fluorine atomsstabilize the buried perovskite interface by passivating interfacial defects, resulting in higher crystalline perovskite films with supressed non-radaitive recombination. Furthermore, the PATFBA buffer layer prevents redox reactions between Ni3+ and perovskite.These synergistic bi-directional interactions lead to optimized inverted PSCs with a PCE of 20.51% compared to 16.89% for pristine devices and the unencapsulated PATFBA-modified devices exhibit outstanding thermal and long-term stability. This work provides a new engineering approach to buried interfaces through the synergy of functional groups.
RESUMEN
The electron extraction from perovskite/C60 interface plays a crucial role in influencing the photovoltaic performance of inverted perovskite solar cells (PSCs). Here, we develop a one-stone-for-three-birds strategy via employing a novel fullerene derivative bearing triple methyl acrylate groups (denoted as C60-TMA) as a multifunctional interfacial layer to optimize electron extraction at the perovskite/C60 interface. It is found that the C60-TMA not only passivates surface defects of perovskite via coordination interactions between C=O groups and Pb2+ cations but also bridge electron transfer between perovskite and C60. Moreover, it effectively induces the secondary grain growth of the perovskite film through strong bonding effect, and this phenomenon has never been observed in prior art reports on fullerene related studies. The combination of the above three upgrades enables improved perovskite film quality with increased grain size and enhanced crystallinity. With these advantages, C60-TMA treated PSC devices exhibit a much higher power conversion efficiency (PCE) of 24.89% than the control devices (23.66%). Besides, C60-TMA benefits improved thermal stability of PSC devices, retaining over 90% of its initial efficiency after aging at 85 °C for 1200 h, primarily due to the reinforced interfacial interactions and improved perovskite film quality.
RESUMEN
Trap-assisted non-radiative recombination losses and moisture-induced degradation significantly impede the development of highly efficient and stable inverted (p-i-n) perovskite solar cells (PSCs), which require high-quality perovskite bulk. In this research, we mitigate these challenges by integrating thermally stable perovskite layers with Lewis base covalent organic frameworks (COFs). The ordered pore structure and surface binding groups of COFs facilitate cyclic, multi-site chelation with undercoordinated lead ions, enhancing the perovskite quality across both its bulk and grain boundaries. This process not only reduces defects but also promotes improved energy alignment through n-type doping at the surface. The inclusion of COF dopants in p-i-n devices achieves power conversion efficiencies (PCEs) of 25.64% (certified 24.94%) for a 0.0748-cm2 device and 23.49% for a 1-cm2 device. Remarkably, these devices retain 81% of their initial PCE after 978 hours of accelerated aging at 85ËC, demonstrating remarkable durability. Additionally, COF-doped devices demonstrate excellent stability under illumination and in moist conditions, even without encapsulation.
RESUMEN
Designing an efficient modification molecule to mitigate non-radiative recombination at the NiOx/perovskite interface and improve perovskite quality represents a challenging yet crucial endeavor for achieving high-performance inverted perovskite solar cells (PSCs). Herein, we synthesized a novel fullerene-based hole transport molecule, designated as FHTM, by integrating C60 with 12 carbazole-based moieties, and applied it as a modification molecule at the NiOx/perovskite interface. The in-situ self-doping effect, triggered by electron transfer between carbazole-based moiety and C60 within the FHTM molecule, along with the extended π conjugated moiety of carbazole groups, significantly enhances FHTM's hole mobility. Coupled with optimized energy level alignment and enhanced interface interactions, the FHTM significantly enhances hole extraction and transport in corresponding devices. Additionally, the introduced FHTM efficiently promotes homogeneous nucleation of perovskite, resulting in high-quality perovskite films. These combined improvements led to the FHTM-based PSCs yielding a champion efficiency of 25.58% (Certified: 25.04%), notably surpassing that of the control device (20.91%). Furthermore, the unencapsulated device maintained 93% of its initial efficiency after 1000 hours of maximum power point tracking under continuous one-sun illumination. This study highlights the potential of functionalized fullerenes as hole transport materials, opening up new avenues for their application in the field of PSCs.
RESUMEN
Formamidinium lead iodide (FAPbI3) represents an optimal absorber material in perovskite solar cells (PSCs), while the application of FAPbI3 in inverted-structured PSCs has yet to be successful, mainly owing to its inferior film-forming on hydrophobic or defective hole-transporting substrates. Herein, we report a substantial improvement of FAPbI3-based inverted PSCs, which is realized by a multifunctional amphiphilic molecular hole-transporter, (2-(4-(10H-phenothiazin-10-yl)phenyl)-1-cyanovinyl)phosphonic acid (PTZ-CPA). The phenothiazine (PTZ) based PTZ-CPA, carrying a cyanovinyl phosphonic acid (CPA) group, forms a superwetting hole-selective underlayer that enables facile deposition of high-quality FAPbI3 thin films. Compared to a previously established carbazole-based hole-selective material (2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)phosphonic acid (MeO-2PACz), the crystallinity of FAPbI3 is enhanced and the electronic defects are passivated by the PTZ-CPA more effectively, resulting in remarkable increases in photoluminescence quantum yield (four-fold) and Shockley-Read-Hall lifetime (eight-fold). Moreover, the PTZ-CPA shows a larger molecular dipole moment and improved energy level alignment with FAPbI3, benefiting the interfacial hole-collection. Consequently, FAPbI3-based inverted PSCs achieve an unprecedented efficiency of 25.35 % under simulated air mass 1.5 (AM1.5) sunlight. The PTZ-CPA based device shows commendable long-term stability, maintaining over 90 % of its initial efficiency after continuous operation at 40 °C for 2000â hours.
RESUMEN
Inverted perovskite solar cells (IPSCs) have witnessed an impressive development in recent years. However, their efficiency is still significantly behind theoretical limits, and device instabilities hinder their commercialization. Two main obstacles to further enhancing their performance via one-step deposition are: 1) the unsatisfactory film quality of perovskite and 2) the poor surface contact. To address the above issues, 4-butanediol ammonium Bromide (BD) is utilized to passivate Pb2+ defects by forming PbN bonds and fill vacancies of formamidinium ions at the buried surface of perovskite. The wettability of poly [bis (4-phenyl) (2,4,6-triMethylphenyl) amine] films is also improved due to the formation of hydrogen bonds between PTAA and BD molecules, resulting in better surface contacts and enhanced perovskite crystallinity. As a result, BD-modified perovskite thin films show a significant increase in the mean grain size, as well as a dramatic enhancement in the PL decay lifetime. The BD-treated device exhibits an efficiency of up to 21.26%, considerably higher than the control device. Moreover, the modified devices show dramatically enhanced thermal and ambient stability compared to the control ones. This methodology paves the way to obtain high-quality perovskite films for fabricating high-performance IPSCs.
RESUMEN
Wide-bandgap perovskite solar cells (PSCs) are attracting increasing attention because they play an irreplaceable role in tandem solar cells. Nevertheless, wide-bandgap PSCs suffer large open-circuit voltage (VOC ) loss and instability due to photoinduced halide segregation, significantly limiting their application. Herein, a bile salt (sodium glycochenodeoxycholate, GCDC, a natural product), is used to construct an ultrathin self-assembled ionic insulating layer firmly coating the perovskite film, which suppresses halide phase separation, reduces VOC loss, and improves device stability. As a result, 1.68 eV wide-bandgap devices with an inverted structure deliver a VOC of 1.20 V with an efficiency of 20.38%. The unencapsulated GCDC-treated devices are considerably more stable than the control devices, retaining 92% of their initial efficiency after 1392 h storage under ambient conditions and retaining 93% after heating at 65 °C for 1128 h in an N2 atmosphere. This strategy of mitigating ion migration via anchoring a nonconductive layer provides a simple approach to achieving efficient and stable wide-bandgap PSCs.
RESUMEN
The improving intrinsic stability, determining the life span of devices, is a challenging task in the industrialization of inverted perovskite solar cells. The most important prerequisite for boosting intrinsic stability is high-quality perovskite films deposition. Here, a molecule, N-(2-pyridyl)pivalamide (NPP) is utilized, as a multifunctional resonance bridge between poly(triarylamine) (PTAA) and perovskite film to regulate the perovskite film quality and promote hole extraction for enhancing the device intrinsic stability. The pyridine groups in NPP couple with the phenyl groups in PTAA through π-π stacking to improve hole extraction capacities and minimize interfacial charge recombination, and the resonance linkages (NCO) in NPP dynamically modulate the perovskite buried defects through strong PbO bonds based on the fast self-adaptive tautomerization between resonance forms (NCO and N+ CO- ). Because of the combined effect of the reduction defect density and improved energy level in the perovskite buried interfaces as well as the optimized crystal orientation in perovskite film enabled by the NPP substrate, the devices based on NPP-grown perovskite films show an efficiency approaching 20% with negligible hysteresis. More impressively, the unencapsulated device displays start-of-the-art intrinsic photostability, operating under continuous 1-sun illumination for 2373 h at 65 °C without loss of PCE.
RESUMEN
Lead halide-based perovskites solar cells (PSCs) are intriguing candidates for photovoltaic technology due to their high efficiency, low cost, and simple fabrication processes. Currently, PSCs with efficiencies of >25% are mainly based on methylammonium (MA)-free and bromide (Br) free, formamide lead iodide (FAPbI3 )-based perovskites, because MA is thermally unstable due to its volatile nature and Br incorporation will induce blue shift in the absorption spectrum. Therefore, MA-free, Br-free formamidine-based perovskites are drawing huge research attention in recent years. The hole transporting layer (HTL) is crucial in fabricating highly efficient and stable inverted p-i-n structured PSCs by enhancing charge extraction, lowering interfacial recombination, and altering band alignment, etc. Here, this work employs a NiOx /PTAA bi-layer HTL combined with GuHCl (guanidinium hydrochloride) additive engineering and PEAI (phenylethylammonium iodide) passivation strategy to optimize the charge carrier dynamics and tune defects chemistry in the MA-free, Br-free RbCsFAPbI3 -based perovskite absorber, which boosts the device efficiency up to 22.78%. Additionally, the device retains 95% of its initial performance under continuous 1 sun equivalent LED light illumination at 45 °C for up to 500 h.
RESUMEN
NiOx-based inverted perovskite solar cells (PSCs) have attracted growing attention due to their low cost and large-scale application potential. However, the efficiency and stability of inverted planar heterojunction PSCs is still unsatisfactory owing to insufficient charge-extraction caused by undesirable interfacial contact between perovskite and NiOx hole transport layers (HTLs). Herein an interfacial passivation strategy with guanidinium salts (guanidinium thiocyanate (GuASCN), guanidine hydrobromide (GuABr), guanidine hydriodate (GuAI)) as passivator is employed to solve this problem. We systematically study the effect of various guanidinium salts on the crystallinity, morphology, and photophysical properties of perovskite films. Guanidine salt as interfacial passivator can decrease interface resistance, reduce carrier non-radiative recombination, and boost carrier extraction. Notably, the GuABr-treated unencapsulated devices can still maintain more than 90 % of their initial PCE after aging for 1600â h at 16-25 °C and 35 %-50 % relative humidity in ambient conditions. This work reveals the significance of counterions in improving the photovoltaic performance and stability of PSCs.
RESUMEN
Inverted perovskite solar cells (PSCs) have received widespread attention due to their facile fabrication and wide applications. However, their power conversion efficiency (PCE) is reported lower than that of regular PSCs because of the undesirable interfacial contact between perovskite and the hydrophobic hole transport layer (HTL). Here, an interface regulation strategy is proposed to overcome this limitation. A small molecule ([2-(9H-carbazol-9-yl) ethyl] phosphonic acid, abbreviated as 2P), composed of carbazole and phosphonic acid groups, is inserted between perovskite and HTL. Morphological characterization and theoretical calculation reveal that perovskite bonds stronger on 2P-modified HTL than on pristine HTL. The improved interfacial contact facilitates hole extraction and retards degradation. Upon the incorporation of 2P, inverted PSCs deliver a high PCE of over 22% with superior stability, keeping 84.6% of initial efficiency after 7200 h storage under an ambient atmosphere with a relative humidity of ≈30-40%. This strategy provides a simple and efficient way to boost the performance of inverted PSCs.
RESUMEN
Inverted-structure perovskite solar cells (PSCs) are known for their superior device stability. However, based on nickel-oxide (NiOx ) substrate, disordered crystallization and bottom interface instability of perovskite film are still the main factors that compromise the power conversion efficiency (PCE) of PSCs. Here, 2D perovskite of thiomorpholine 1,1-dioxide lead iodide (Td2 PbI4 ) is introduced as a template to prepare 3D perovskite thin film with high crystal orientation and large grain size via a bottom-up growth method. By adding TdCl to the precursor solution, pre-crystallized 2D Td2 PbI4 seeds can accumulate at the bottom interface, lowering the barrier of nucleation, and templating the growth of 3D perovskite films with improved (100) orientation and reduced defects during crystallization. In addition, 2D Td2 PbI4 at the bottom interface also hinders the interfacial redox reaction and reduces the hole extraction barrier on the buried interface. Based on this, the Td-0.5 PSC achieves a PCE of 22.09% and an open-circuit voltage of 1.16 V. Moreover, Td-0.5 PSCs show extremely high stability, which retains 84% of its initial PCE after 500 h of continuous illumination under maximum power point operating conditions in N2 atmosphere. This work paves the way for performance improvement of inverted PSCs on NiOx substrate.
RESUMEN
The synthesis of CuSCN/CuI nanocomposite by single-step electrodeposition is developed. The surface morphology and film thickness are controlled by changing the electrochemical potential and deposition time. The mixed-phase formation of CuSCN/CuI is confirmed through x-ray diffraction and Raman spectral analysis. Nanopetal (NP) like morphology of CuSCN/CuI is observed in FESEM micrographs. Interestingly, the NPs density and thickness are increased with increasing the deposition potential and time. The device fabricated using CuSCN/CuI nanocomposite as a hole transport layer (HTL) which is grown for 2 min delivers the best photovoltaic performance. The maximum power conversion efficiency of 18.82% is observed for CuSCN/CuI NP with a density of 1153µm-2and thickness of 142 nm. The charge transfer ability of the CuSCN/CuI NP HTL is analyzed by electrochemical impedance spectroscopy. Based on the observation, moderate charge transport resistance and optimum film thickness are required for achieving maximum photovoltaic performance in perovskite solar cells (PVSCs). Thus, the developed CuSCN/CuI NP HTL is a potential candidate for PVSCs.
RESUMEN
Delicately designed dopant-free hole-transporting materials (HTMs) with ordered structure have become one of the major strategies to achieve high-performance perovskite solar cells (PSCs). In this work, we report two donor-π linker-donor (D-π-D) HTMs, N01 and N02, which consist of facilely synthesized 4,8-di(n-hexyloxy)-benzo[1,2-b:4,5-b']dithiophene as a π linker, with 10-bromohexyl-10H-phenoxazine and 10-hexyl-10H-phenoxazine as donors, respectively. The N01 molecules form a two-dimensional conjugated network governed by C-Hâ â â O and C-Hâ â â Br interaction between phenoxazine donors, and synchronously construct a three-dimension lamellar structure with the aid of interlaminar π-π interaction. Consequently, N01 as a dopant-free small-molecule HTM exhibits a higher intrinsic hole mobility and more favorable interfacial properties for hole transport, hole extraction and perovskite growth, enabling an inverted PSC to achieve a very impressive power conversion efficiency of 21.85 %.
RESUMEN
Currently, the performance improvement for inverted perovskite solar cells (PVSCs) is mainly limited by the high open circuit voltage (VOC ) loss caused by detrimental non-radiative recombination (NRR) processes. Herein, we report a simple and efficient way to simultaneously reduce the NRR processes inside perovskites and at the interface by rationally designing a new pyridine-based polymer hole-transporting material (HTM), PPY2, which exhibits suitable energy levels with perovskites, high hole mobility, effective passivation of the uncoordinated Pb2+ and iodide defects, as well as the capability of promoting the formation of high-quality polycrystalline perovskite films. In absence of any dopants, the inverted PVSCs using PPY2 as the HTM deliver an encouraging PCE up to 22.41 % with a small VOC loss (0.40â V), among the best device performances for inverted PVSCs reported so far. Furthermore, PPY2-based unencapsulated devices show an excellent long-term photostability, and over 97 % of its initial PCE can be maintained after one sun constant illumination for 500â h.
RESUMEN
It is highly desirable to employ n-type polymers as electron transporting layers (ETLs) in inverted perovskite solar cells (PSCs) due to their good electron mobility, high hydrophobicity, and simplicity of film forming. In this research, the capability of three n-type donor-acceptor1 -donor-acceptor2 (D-A1 -D-A2 ) conjugated polymers (pBTT, pBTTz, and pSNT) is first explored as ETLs because these polymers possess electron mobilities as high as 0.92, 0.46, and 4.87 cm2 (Vs)-1 in n-channel organic transistors, respectively. The main structural difference among pBTT, pBTTz, and pSNT is the position of sp2 -nitrogen atoms (sp2 -N) in the polymer main chains. Therefore, the effect of different substitution positions on the PSC performances is comprehensively studied. The as-fabricated p-i-n PSCs with pBTT, pBTTz, and pSNT as ETLs show the maximum photoconversion efficiencies of 12.8%, 14.4%, and 12.0%, respectively. To be highlighted, pBTTz-based device can maintain 80% of its stability after ten days due to its good hydrophobicity, which is further confirmed by a contact angle technique. More importantly, the pBTTz-based device shows a neglected hysteresis. This study reveals that the n-type polymers can be promising candidates as ETLs to approach solution-processed highly-efficient inverted PSCs.