Graphene Schottky Junction on Pillar Patterned Silicon Substrate.

A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly bias- and temperature-dependent reverse current. Below room temperature, the reverse current grows exponentially with the applied voltage because the pillar-enhanced electric field lowers the Schottky barrier. Conversely, at higher temperatures, the charge carrier thermal generation is dominant and the reverse current becomes weakly bias-dependent. A quasi-saturated reverse current is similarly observed at room temperature when the charge carriers are photogenerated under light exposure. The device shows photovoltaic effect with 0.7% power conversion efficiency and achieves 88 A/W photoresponsivity when used as photodetector.

Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode.

Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 µ S was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.