Monolithic integrated light-emitting-diode/photodetector sensor for photoactive analyte monitoring: design and simulation.

We present the simulation and design optimization of an integrated light-emitting-diode/photodetector (LED-PD) sensor system for monitoring of light absorbance changes developing in analyte-sensitive compounds. The sensor integrates monolithically both components in a single chip, offering advantages such as downsizing, reduced assembly complexity, and lower power consumption. The changes in the optical parameters of the analyte-sensitive ink are detected by monitoring the power transmission from the LED to the PD. Ray tracing and coupled modeling approach (CMA) simulations are employed to investigate the interaction of the emitted light with the ink. In highly absorbing media, CMA predicts more accurate results by considering evanescent waves. Simulations also suggest that an approximately 39% change in optical transmission can be achieved by adjusting the ink-deposited layer thickness and varying the extinction coefficient from 10-4 to 3×10-4.

Design study of a micro illumination platform based on GaN microLED arrays.

The design study of a micro illumination tool based on GaN microLED arrays is presented. The high spatio-temporal resolution and the capability of generating fully customized optical patterns that characterize the proposed platform would enable the manipulation of biological systems, e.g., for optogenetics applications. Based on ray tracing simulations, the design aspects that mainly affect the device performance have been identified, and the related structural parameters have been optimized to improve the extraction efficiency and the spatial resolution of the resulting light patterns. Assuming that the device is a bottom emitter, and the light is extracted from the n-side, the presence of mesa-structures on the p-side of the GaN layer can affect both the efficiency and the resolution, being optimized for different values of the mesa-side inclination angle. The full width at half maximum (FWHM) of the extracted spots is mainly determined by the substrate thickness, and the relation between the FWHM and the array pitch represents a criterion to define the resolution. Namely, when F W H M

Fundamental Definitions for Axially-Strained Piezo-Semiconductive Nanostructures.

Piezoelectric nanotransducers may offer key advantages in comparison with conventional piezoelectrics, including more choices for types of mechanical input, positions of the contacts, dimensionalities and shapes. However, since most piezoelectric nanostructures are also semiconductive, modeling becomes significantly more intricate and, therefore, the effects of free charges have been considered only in a few studies. Moreover, the available reports are complicated by the absence of proper nomenclature and figures of merit. Besides, some of the previous analyses are incomplete. For instance, the local piezopotential and free charges within axially strained conical piezo-semiconductive nanowires have only been systematically investigated for very low doping (1016 cm-3) and under compression. Here we give the definitions for the enhancement, depletion, base and tip piezopotentials, their characteristic lengths and both the tip-to-base and the depletion-to-enhancement piezopotential-ratios. As an example, we use these definitions for analyzing the local piezopotential and free charges in n-type ZnO truncated conical nanostructures with different doping levels (intrinsic, 1016 cm-3, 1017 cm-3) for both axial compression and traction. The definitions and concepts presented here may offer insight for designing high performance piezosemiconductive nanotransducers.

Sensitivity Enhancement of MEMS Diaphragm Hydrophones Using an Integrated Ring MOSFET Transducer.

A high-sensitivity MEMS diaphragm hydrophone has been proposed. The designed hydrophone has a higher sensitivity in comparison with its previous counterparts. Readout electronics includes an integrated MOSFET and an external operational amplifier. An integrated ring MOSFET with a piezoelectric gate has been used as the strain to the electrical current transducer. The drain of the MOSFET has been connected to an operational amplifier that converts the transistor current to the voltage and also amplifies it. An analytical relation for the sensitivity has been derived which is in an outstanding agreement with the finite-element analysis. It has been proven that the changes in the channel length and mobility are negligible, and the transistor current is merely under the influence of the pressure-induced charges on the piezoelectric surface which directly produces the vertical electric field. It has been shown that the ring MOSFET transducer can help designing MEMS hydrophones with smaller dimensions while keeping the sensitivity as much as the larger structures.