Topological Spaser.

We theoretically introduce a topological spaser, which consists of a hexagonal array of plasmonic metal nanoshells containing an achiral gain medium in their cores. Such a spaser can generate two mutually time-reversed chiral surface plasmon modes in the K and K^{'} valleys, which carry the opposite topological charges, ±1, and are described by a two-dimensional E^{'} representation of the D_{3h} point symmetry group. Due to the mode competition, this spaser exhibits a bistability: only one of these two modes generates, which is a spontaneous symmetry breaking. Such a spaser can be used for an ultrafast all-optical memory and information processing, and biomedical detection and sensing with chirality resolution.

Controlling dielectrics with the electric field of light.

The control of the electric and optical properties of semiconductors with microwave fields forms the basis of modern electronics, information processing and optical communications. The extension of such control to optical frequencies calls for wideband materials such as dielectrics, which require strong electric fields to alter their physical properties. Few-cycle laser pulses permit damage-free exposure of dielectrics to electric fields of several volts per ångström and significant modifications in their electronic system. Fields of such strength and temporal confinement can turn a dielectric from an insulating state to a conducting state within the optical period. However, to extend electric signal control and processing to light frequencies depends on the feasibility of reversing these effects approximately as fast as they can be induced. Here we study the underlying electron processes with sub-femtosecond solid-state spectroscopy, which reveals the feasibility of manipulating the electronic structure and electric polarizability of a dielectric reversibly with the electric field of light. We irradiate a dielectric (fused silica) with a waveform-controlled near-infrared few-cycle light field of several volts per angström and probe changes in extreme-ultraviolet absorptivity and near-infrared reflectivity on a timescale of approximately a hundred attoseconds to a few femtoseconds. The field-induced changes follow, in a highly nonlinear fashion, the turn-on and turn-off behaviour of the driving field, in agreement with the predictions of a quantum mechanical model. The ultrafast reversibility of the effects implies that the physical properties of a dielectric can be controlled with the electric field of light, offering the potential for petahertz-bandwidth signal manipulation.

Optical-field-induced current in dielectrics.

The time it takes to switch on and off electric current determines the rate at which signals can be processed and sampled in modern information technology. Field-effect transistors are able to control currents at frequencies of the order of or higher than 100 gigahertz, but electric interconnects may hamper progress towards reaching the terahertz (10(12) hertz) range. All-optical injection of currents through interfering photoexcitation pathways or photoconductive switching of terahertz transients has made it possible to control electric current on a subpicosecond timescale in semiconductors. Insulators have been deemed unsuitable for both methods, because of the need for either ultraviolet light or strong fields, which induce slow damage or ultrafast breakdown, respectively. Here we report the feasibility of electric signal manipulation in a dielectric. A few-cycle optical waveform reversibly increases--free from breakdown--the a.c. conductivity of amorphous silicon dioxide (fused silica) by more than 18 orders of magnitude within 1 femtosecond, allowing electric currents to be driven, directed and switched by the instantaneous light field. Our work opens the way to extending electronic signal processing and high-speed metrology into the petahertz (10(15) hertz) domain.

High harmonic generation in graphene quantum dots.

We study theoretically the generation of high harmonics in disk graphene quantum dots placed in linearly polarized short pulse. The quantum dots (QD) are described within an effective model of the Dirac type and the length gauge was used to describe the interaction of quantum dots with an optical pulse. The generated radiation spectra of graphene quantum dots can be controlled by varying the quantum dot size, i.e. its radius. With increasing the quantum dot radius, the intensities of low harmonics mainly decrease, while the cutoff frequency increases. The sensitivity of the cutoff frequency to the QD size increases with the intensity of the pulse.

Ultrafast field-driven valley polarization of transition metal dichalcogenide quantum dots.

We study theoretically the electron dynamics of transition metal dichalcogenide (TMDC) quantum dots (QDs) in the field of an ultrashort and ultrafast circularly polarized optical pulse. The QDs have the shape of a disk and their electron systems are described within an effective model with infinite mass boundary conditions. Similar to TMDC monolayers, a circularly polarized pulse generates ultrafast valley polarization of such QDs. The dependence of the valley polarization on the size of the dot is sensitive to the dot material and, for different materials, show both monotonic increase with the dot radius and nonmonotonic behavior with a local maximum at a finite dot radius.

Ultrafast pulse pumping of topological nanospaser.

We theoretically examine a topological nanospaser that is optically pumped using an ultra-fast circularly-polarized pulse. The spasing system consists of a silver nanospheroid, which supports surface plasmon (SP) excitations, and a transition metal dichalcogenide (TMDC) monolayer nanoflake. The silver nanospheroid screens the incoming pulse and creates a non-uniform spatial distribution of electron excitations in the TMDC nanoflake. These excitations decay into the localized SPs, which can be of two types with the corresponding magnetic quantum number ±1. The amount and the type of the generated SPs depend on the intensity of the optical pulse. For small pulse amplitude, only one plasmonic mode is predominantly generated, resulting in far-field elliptically polarized radiation. For large amplitude of the optical pulse, both plasmonic modes are generated in almost the same amount, resulting in linearly polarized far-field radiation.

Topological resonance in graphene-like materials.

In topological materials, interacting with short and strong optical pulses, electrons can accumulate a topological phase during the pulse. Such phase can compensate the dynamic phase resulting in topological resonance, which is visible as a large inter-band transfer of electron population. We study theoretically the topological resonance in materials of the gapped multilayer graphene type. We show that the resonance can be observed only in the systems with finite bandgap. For graphene monolayer the topological resonance can occur only in the field of an elliptically polarized pulse, while for graphene systems with many layers the topological resonance can be also realized in a linearly polarized pulse.

Infrared optical spectrum of topological crystalline insulator SnTe (001) surface states.

We investigate the effects of varying temperature and chemical potential on the optical absorption spectrum of (001) surface states of topological crystalline insulator SnTe using a four-band effective k ⋅ p Hamiltonian. The spectrum is characterized by a narrow peak at 52 meV and a shoulder feature at 160 meV. Both absorptions have maximal intensity at 0 K or when chemical potential is located at the charge neutrality point. Then, as temperature increases or as chemical potential diverges, they both decrease in intensity. The 52 meV peak originates from transitions between high density of states regions surrounding van Hove singularities and is the spectrum's most prominent feature. Additionally, a third absorption from 110 meV to 150 meV, initially absent at 0 K or chemical potential at charge neutrality point, gradually builds in intensity as temperature increases or as chemical potential diverges. This absorption arises from transitions between low and high energy bands of opposite helicity. Importantly, we find that all distinct spectral features are diminished if the magnitude of chemical potential diverges to values above the van Hove singularity energies. If a given sample's chemical potential is well-controlled, conventional infrared spectroscopy may be used to identify the spectral signatures of SnTe (001) surface states at room temperatures and without use of large magnetic fields.

Bilayer graphene in strong ultrafast laser fields.

We theoretically investigate the interaction of an ultrastrong femtosecond-long linearly polarized optical pulse with AB-stacked bilayer graphene (BLG). The pulse excite electrons from the valence into the conduction band (CB), resulting in finite CB population. Such a redistribution of electrons results in the generation of current which can be manipulated by the angle of incidence of the pulse. For the normal incidence, the current along a direction transverse to the polarization of the optical pulse is zero. However, the interlayer symmetry is broken up by a finite angle of incidence due to which BLG possesses a single axis of symmetry. Thus, for an oblique incidence, if the pulse is polarized normal to the symmetry axis then there is an induction of electric current in the direction perpendicular to the polarization of the pulse. We show that the magnitude and the direction of such a current as well as charge transfer along this direction can be manipulated by tuning the angle of incidence of the laser pulse. Further, the symmetry of the system prohibits the generation of transverse current if the pulse is polarized along the axis of symmetry of BLG.

Electrical current through DNA containing mismatched base pairs.

Mismatched base pairs, such as different conformations of the G.A mispair, cause only minor structural changes in the host DNA molecule, thereby making mispair recognition an arduous task. Electron transport in DNA that depends strongly on the hopping transfer integrals between the nearest base pairs, which in turn are affected by the presence of a mispair, might be an attractive approach in this regard. We report here on our investigations, via the I-V characteristics, of the effect of a mispair on the electrical properties of homogeneous and generic DNA molecules. The I-V characteristics of DNA were studied numerically within the double-stranded tight-binding model. The parameters of the tight-binding model, such as the transfer integrals and on-site energies, are determined from first-principles calculations. The changes in electrical current through the DNA chain due to the presence of a mispair depend on the conformation of the G.A mispair and are appreciable for DNA consisting of up to 90 base pairs. For homogeneous DNA sequences the current through DNA is suppressed and the strongest suppression is realized for the G(anti).A(syn) conformation of the G.A mispair. For inhomogeneous (generic) DNA molecules, the mispair result can be either a suppression or an enhancement of the current, depending on the type of mispairs and actual DNA sequence.

Ultrafast optical currents in gapped graphene.

We theoretically study the interaction of ultrashort optical pulses with gapped graphene. Such a strong pulse results in a finite conduction band population and a corresponding electric current, both during and after the pulse. Since gapped graphene has broken inversion symmetry, it has an axial symmetry about the y -axis but not about the x-axis. We show that, in this case, if the linear pulse is polarized along the x-axis, the rectified electric current is generated in the y  direction. At the same time, the conduction band population distribution in the reciprocal space is symmetric about the x-axis. Thus, the rectified current in gapped graphene has an inter-band origin, while the intra-band contribution to the rectified current is zero.

Energy spectra and optical transitions in germanene quantum dots.

The band gap of buckled graphene-like materials, such as silicene and germanene, depends on external perpendicular electric field. Then a specially design profile of electric field can produce trapping potential for electrons. We study theoretically the energy spectrum and optical transitions for such designed quantum dots (QDs) in graphene-like materials. The energy spectra depend on the size of the QD and applied electric field in the region of the QD. The number of the states in the QD increases with increasing the size of the dot and the energies of the states have almost linear dependence on the applied electric field with the slope which increases with increasing the dot size. The optical properties of the QDs are characterized by two types of absorption spectra: interband (optical transitions between the states of the valence and conduction bands) and intraband (transitions between the states of conduction/valence band). The interband absorption spectra have triple-peak structure with peak separation around 10 meV, while intraband absorption spectra, which depend on the number of electrons in the dot, have double-peak structure.

Semimetallization of dielectrics in strong optical fields.

At the heart of ever growing demands for faster signal processing is ultrafast charge transport and control by electromagnetic fields in semiconductors. Intense optical fields have opened fascinating avenues for new phenomena and applications in solids. Because the period of optical fields is on the order of a femtosecond, the current switching and its control by an optical field may pave a way to petahertz optoelectronic devices. Lately, a reversible semimetallization in fused silica on a femtosecond time scale by using a few-cycle strong field (~1 V/Å) is manifested. The strong Wannier-Stark localization and Zener-type tunneling were expected to drive this ultrafast semimetallization. Wider spread of this technology demands better understanding of whether the strong field behavior is universally similar for different dielectrics. Here we employ a carrier-envelope-phase stabilized, few-cycle strong optical field to drive the semimetallization in sapphire, calcium fluoride and quartz and to compare this phenomenon and show its remarkable similarity between them. The similarity in response of these materials, despite the distinguishable differences in their physical properties, suggests the universality of the physical picture explained by the localization of Wannier-Stark states. Our results may blaze a trail to PHz-rate optoelectronics.

Tunable spin-selective transport through DNA with mismatched base pairs.

In our theoretical analysis of spin-selective transport through a homogeneous poly(G)-poly(C) DNA we explore the influence of a mismatched base pair in the DNA chain. The spin polarization of the electrical current through DNA is strongly sensitive to the presence of the mispair in a DNA with less than 20 base pairs. Replacing a canonical G-C base pair by a G-A mispair in homogeneous DNA can strongly decrease, increase up to an order of magnitude, or even change the sign of spin polarization of the electrical current. The mispair induced spin-selective current through DNA also depends on the location of the mispair within the DNA.

A quantum dot in topological insulator nanofilm.

We introduce a quantum dot in topological insulator nanofilm as a bump at the surface of the nanofilm. Such a quantum dot can localize an electron if the size of the dot is large enough, ≳5 nm. The quantum dot in topological insulator nanofilm has states of two types, which belong to two ('conduction' and 'valence') bands of the topological insulator nanofilm. We study the energy spectra of such defined quantum dots. We also consider intraband and interband optical transitions within the dot. The optical transitions of the two types have the same selection rules. While the interband absorption spectra have multi-peak structure, each of the intraband spectra has one strong peak and a few weak high frequency satellites.