Metal/metal sulfide functionalized single-walled carbon nanotubes: FTO-free counter electrodes for dye sensitized solar cells.

The use of single-walled carbon nanotubes (CNT) thin films to replace conventional fluorine-doped tin oxide (FTO) and both FTO and platinum (Pt) as the counter electrode in dye sensitized solar cells (DSSC) requires surface modification due to high sheet resistance and charge transfer resistance. In this paper, we report a simple, solution-based method of preparing FTO-free counter electrodes based on metal (Pt) or metal sulfide (Co(8.4)S(8), Ni(3)S(2)) nanoparticles/CNT composite films to improve device performance. Based on electrochemical studies, the relative catalytic activity of the composite films was Pt > Co(8.4)S(8) > Ni(3)S(2). We achieved a maximum efficiency of 3.76% for the device with an FTO-free counter electrode (Pt/CNT). The device with an FTO- and Pt-free (CoS/CNT) counter electrode gives 3.13% efficiency.

Solution processed transition metal sulfides: application as counter electrodes in dye sensitized solar cells (DSCs).

A solution processed method for fabricating transition metal sulfides on fluorine doped tin oxide (FTO) as efficient counter electrodes in iodine/iodide based solar cells has been demonstrated. Conversion efficiencies of 7.01% and 6.50% were obtained for nickel and cobalt sulfides, respectively, comparable to the conventional thermally platinised FTO electrodes (7.32%). A comparable charge transfer resistance of Ni(3)S(2) and Co(8.4)S(8) to conventional Pt was found to be a key factor for such high efficiencies. Cyclic voltammetry, Kelvin probe microscopy, Electrochemical Impedance Spectroscopy, and Tafel polarization were performed to study the underlying reasons behind such efficient counter electrode performance.

Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells.

We have investigated the impact of Cu2ZnSnS4-Molybdenum (Mo) interface quality on the performance of sputter-grown Cu2ZnSnS4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoSx) interfacial layer is observed in sputter grown CZTS films after sulphurization. Thickness of MoSx layer is found ~142 nm when CZTS layer (550 nm thick) is sulphurized at 600 °C. Thickness of MoSx layer significantly increased to ~240 nm in case of thicker CZTS layer (650 nm) under similar sulphurization condition. We also observe that high temperature (600 °C) annealing suppress the elemental impurities (Cu, Zn, Sn) at interfacial layer. The amount of out-diffused Mo significantly varies with the change in sulphurization temperature. The out-diffused Mo into CZTS layer and reconstructed interfacial layer remarkably decreases series resistance and increases shunt resistance of the solar cell. The overall efficiency of the solar cell is improved by nearly five times when 600 °C sulphurized CZTS layer is applied in place of 500 °C sulphurized layer. Molybdenum and sulphur diffusion reconstruct the interface layer during heat treatment and play the major role in charge carrier dynamics of a photovoltaic device.

Antimony Doping in Solution-processed Cu2 ZnSn(S,Se)4 Solar Cells.

Kesterite Cu2 ZnSn(S,Se)4 (CZTSSe) is obtained using a facile precursor-solution method followed by selenization. Power-conversion efficiency of 6.0 % is achieved and further improved to 8.2 % after doping the absorber with 0.5 mol % Sb. XRD and Raman spectroscopy show similar characteristics for the undoped and doped CZTSSe. Increasing the Sb concentration increases the grain size and lowers the series resistance. However, further Sb doping beyond 0.5 mol % degrades device performance due to lower open-circuit voltage (and therefore lower fill factor). The effect of Sb doping and the doping concentration are investigated by power-dependent and temperature-dependent photoluminescence studies, revealing that trap density is significant reduced with 0.5 mol % Sb doping. Additional doping beyond 0.5 mol % creates more defects that quench the photoexcited carriers and decrease the open-circuit voltage.