Optoelectronic memory using two-dimensional materials.

An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe and MoS2 atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage.

Ternary CuIn7Se11 : towards ultra-thin layered photodetectors and photovoltaic devices.

A few-layered ternary Cu-In-Se compound is synthesized, the photoconductivity is measured, and 2D photovoltaic devices are fabricated. Few-layered CuIn7 Se11 has a strong photoresponse and the potential to serve as the active medium in ultra-thin photovoltaic devices.