Optical parametric amplification in silicon nitride waveguides for coherent Raman imaging.

We present tunable waveguide-based optical parametric amplification by four-wave mixing (FWM) in silicon nitride waveguides, with the potential to be set up as an all-integrated device, for narrowband coherent anti-Stokes Raman scattering (CARS) imaging. Signal and idler pulses are generated via FWM with only 3 nJ pump pulse energy and stimulated by using only 4 mW of a continuous-wave seed source, resulting in a 35 dB enhancement of the idler spectral power density in comparison to spontaneous FWM. By using waveguides with different widths and tuning the wavelength of the signal wave seed, idler wavelengths covering the spectral region from 1.1 µm up to 1.6 µm can be generated. The versatility of the chip-based FWM light source is demonstrated by acquiring CARS images.

Toward integrated synchronously pumped optical parametric oscillators in silicon nitride.

We present a tunable, hybrid waveguide-fiber optical parametric oscillator (OPO) synchronously pumped by an ultra-fast fiber laser exploiting four-wave mixing (FWM) generated in silicon nitride waveguides. Parametric oscillation results in a 35 dB enhancement of the idler spectral power density in comparison to spontaneous FWM, with the ability of wide wavelength tuning over 86 nm in the O-band. Measurements of the oscillation threshold and the efficiency of the feedback loop reveal how an integration of the OPO on a single silicon nitride chip can be accomplished at standard repetition rates of pump lasers in the order of 100 MHz.

Ring resonator enhanced mode-hop-free wavelength tuning of an integrated extended-cavity laser.

Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of the cavity. This reduces the wavelength range of continuous laser tuning that can be achieved with a given phase shift of an intracavity phase tuning element. We present a method that increases the range of continuous tuning to that of a short equivalent laser cavity, while maintaining the ultra-narrow linewidth of a long cavity. Using a single-frequency hybrid integrated InP-Si3N4 diode laser with 120 nm coverage around 1540 nm, with a maximum output of 24 mW and lowest intrinsic linewidth of 2.2 kHz, we demonstrate a six-fold increased continuous and mode-hop-free tuning range of 0.22 nm (28 GHz) as compared to the free-spectral range of the laser cavity.

Hybrid integrated InP-Si3N4 diode laser with a 40-Hz intrinsic linewidth.

We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip. Employing solely dielectrics for single-roundtrip, single-mode resolved feedback filtering enables linewidth narrowing with increasing laser power, without limitations through nonlinear loss. We achieve single-frequency oscillation with up to 23 mW fiber coupled output power, 70-nm wide spectral coverage in the 1.55 µm wavelength range with 3 mW output and obtain more than 60 dB side mode suppression. Such properties and options for further linewidth narrowing render the approach of high interest for direct integration in photonic circuits serving microwave photonics, coherent communications, sensing and metrology with highest resolution.

Spontaneous four-wave mixing in silicon nitride waveguides for broadband coherent anti-Stokes Raman scattering spectroscopy.

We present a light source for coherent anti-Stokes Raman scattering (CARS) based on broadband spontaneous four-wave mixing, with the potential to be further integrated. By using 7 mm long silicon nitride waveguides, which offer tight mode confinement and a high nonlinear refractive index coefficient, broadband signal and idler pulses were generated with 4 nJ of input pulse energy. In comparison to fiber-based experiments, the input energy and the waveguide length were reduced by two orders of magnitude, respectively. The idler and residual pump pulses were used for CARS measurements, enabling chemically selective and label-free spectroscopy over the entire fingerprint region, with an ultrafast fiber-based pump source at 1033 nm wavelength. The presented simple light source paves the path towards cost-effective, integrated lab-on-a-chip CARS applications.

Surface acoustic waves for acousto-optic modulation in buried silicon nitride waveguides.

We theoretically investigate the use of Rayleigh surface acoustic waves (SAWs) for refractive index modulation in optical waveguides consisting of amorphous dielectrics. Considering low-loss Si3N4 waveguides with a standard core cross-section of 4.4×0.03 µm2 size, buried 8-µm deep in a SiO2 cladding, we compare surface acoustic wave generation in various different geometries via a piezo-active, lead zirconate titanate film placed on top of the surface and driven via an interdigitized transducer (IDT). Using numerical solutions of the acoustic and optical wave equations, we determine the strain distribution of the SAW under resonant excitation. From the overlap of the acoustic strain field with the optical mode field, we calculate and maximize the attainable amplitude of index modulation in the waveguide. For the example of a near-infrared wavelength of 840 nm, a maximum shift in relative effective refractive index of 0.7x10-3 was obtained for TE polarized light, using an IDT period of 30-35 µm, a film thickness of 2.5-3.5 µm, and an IDT voltage of 10 V. For these parameters, the resonant frequency is in the range of 70-85 MHz. The maximum shift increases to 1.2x10-3, with a corresponding resonant frequency of 87 MHz, when the height of the cladding above the core is reduced to 3 µm. The relative index change is about 300 times higher than in previous work based on non-resonant proximity piezo-actuation, and the modulation frequency is about 200 times higher. Exploiting the maximum relative index change of 1.2×10-3 in a low-loss, balanced Mach-Zehnder modulator should allow full-contrast modulation in devices as short as 120 µm (half-wave voltage length product = 0.24 Vcm).

Linewidth narrowing via low-loss dielectric waveguide feedback circuits in hybrid integrated frequency comb lasers.

We present an integrated hybrid semiconductor-dielectric (InP-Si3N4) waveguide laser that generates frequency combs at a wavelength around 1.5 µm with a record-low intrinsic optical linewidth of 34 kHz. This is achieved by extending the cavity photon lifetime using a low-loss dielectric waveguide circuit. In our experimental demonstration, the on-chip, effective optical path length of the laser cavity is extended to 6 cm. The resulting linewidth narrowing shows the high potential of on-chip, highly coherent frequency combs with direct electrical pumping, based on hybrid and heterogeneous integrated circuits making use of low-loss dielectric waveguides.

8×8 reconfigurable quantum photonic processor based on silicon nitride waveguides.

The development of large-scale optical quantum information processing circuits ground on the stability and reconfigurability enabled by integrated photonics. We demonstrate a reconfigurable 8×8 integrated linear optical network based on silicon nitride waveguides for quantum information processing. Our processor implements a novel optical architecture enabling any arbitrary linear transformation and constitutes the largest programmable circuit reported so far on this platform. We validate a variety of photonic quantum information processing primitives, in the form of Hong-Ou-Mandel interference, bosonic coalescence/anti-coalescence and high-dimensional single-photon quantum gates. We achieve fidelities that clearly demonstrate the promising future for large-scale photonic quantum information processing using low-loss silicon nitride.

Low-power broadband all-optical switching via intermodal cross-phase modulation in integrated optical waveguides.

We demonstrate the potential of all-optical switches in integrated waveguides based on intermodal cross-phase modulation between transverse modes. For this purpose, the differential phase between two transverse modes of a probe beam was altered by cross-phase modulation with a control beam propagating only in the fundamental mode. A switching behavior was accomplished by spatially filtering the resulting multimode interference of the probe modes, which changed depending on the control beam power. All-optical switching with a contrast of 82% at 1280 nm over a frequency range of 4.4 THz at 1.6 nJ was achieved, representing an improvement of the product of necessary power and waveguide length by a factor of nearly 2000 compared to similar experiments in graded-index fibers. Additionally, we show that the center wavelength of the switch can be tailored by changing the cross-sectional geometry of the waveguide or the involved probe modes.

Two-octave spanning supercontinuum generation in stoichiometric silicon nitride waveguides pumped at telecom wavelengths.

We demonstrate supercontinuum generation in stoichiometric silicon nitride (Si3N4 in SiO2) integrated optical waveguides, pumped at telecommunication wavelengths. The pump laser is a mode-locked erbium fiber laser at a wavelength of 1.56 µm with a pulse duration of 120 fs. With a waveguide-internal pulse energy of 1.4 nJ and a waveguide with 1.0 µm × 0.9 µm cross section, designed for anomalous dispersion across the 1500 nm telecommunication range, the output spectrum extends from the visible, at around 526 nm, up to the mid-infrared, at least to 2.6 µm, the instrumental limit of our detection. This output spans more than 2.2 octaves (454 THz at the -30 dB level). The measured output spectra agree well with theoretical modeling based on the generalized nonlinear Schrödinger equation. The infrared part of the supercontinuum spectra shifts progressively towards the mid-infrared, well beyond 2.6 µm, by increasing the width of the waveguides.

Ultrafast, low-power, all-optical switching via birefringent phase-matched transverse mode conversion in integrated waveguides.

We demonstrate the potential of birefringence-based, all-optical, ultrafast conversion between the transverse modes in integrated optical waveguides by modelling the conversion process by numerically solving the multi-mode coupled nonlinear Schroedinger equations. The observed conversion is induced by a control beam and due to the Kerr effect, resulting in a transient index grating which coherently scatters probe light from one transverse waveguide mode into another. We introduce birefringent phase matching to enable efficient all-optically induced mode conversion at different wavelengths of the control and probe beam. It is shown that tailoring the waveguide geometry can be exploited to explicitly minimize intermodal group delay as well as to maximize the nonlinear coefficient, under the constraint of a phase matching condition. The waveguide geometries investigated here, allow for mode conversion with over two orders of magnitude reduced control pulse energy compared to previous schemes and thereby promise nonlinear mode switching exceeding efficiencies of 90% at switching energies below 1 nJ.

On-chip visible-to-infrared supercontinuum generation with more than 495 THz spectral bandwidth.

We report ultra-broadband supercontinuum generation in high-confinement Si3N4 integrated optical waveguides. The spectrum extends through the visible (from 470 nm) to the infrared spectral range (2130 nm) comprising a spectral bandwidth wider than 495 THz, which is the widest supercontinuum spectrum generated on a chip.

High confinement, high yield Si(3)N(4) waveguides for nonlinear optical applications.

In this paper we present a novel fabrication technique for silicon nitride (Si(3)N(4)) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si(3)N(4). Using this technique no stress-induced cracks in the Si(3)N(4) layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

Integrated microwave photonic splitter with reconfigurable amplitude, phase, and delay offsets.

This work presents an integrated microwave photonics splitter with reconfigurable amplitude, phase, and delay offsets. The core components for this function are a dual-parallel Mach-Zehnder modulator, a deinterleaver, and tunable delay lines, all implemented using photonic integrated circuits. Using a demonstrator with an optical free spectral range of 25 GHz, we show experimentally the RF splitting function over two continuous bands, i.e., 0.9-11.6 GHz and 13.4-20 GHz. This result promises a deployable solution for creating wideband, reconfigurable RF splitters in integrated forms.

Spectral purification and infrared light recycling in extreme ultraviolet lithography sources.

We present the design of a novel collector mirror for laser produced plasma (LPP) light sources to be used in extreme ultraviolet (EUV) lithography. The design prevents undesired infrared (IR) drive laser light, reflected from the plasma, from reaching the exit of the light source. This results in a strong purification of the EUV light, while the reflected IR light becomes refocused into the plasma for enhancing the IR-to-EUV conversion. The dual advantage of EUV purification and conversion enhancement is achieved by incorporating an IR Fresnel zone plate pattern into the EUV reflective multilayer coating of the collector mirror. Calculations using Fresnel-Kirchhoff's diffraction theory for a typical collector design show that the IR light at the EUV exit is suppressed by four orders of magnitude. Simultaneously, 37% of the reflected IR light is refocused back the plasma.

On-chip microwave photonic beamformer circuits operating with phase modulation and direct detection.

We propose and experimentally demonstrate the working principles of two novel microwave photonic (MWP) beamformer circuits operating with phase modulation (PM) and direct detection (DD). The proposed circuits incorporate two major signal processing functionalities, namely a broadband beamforming network employing ring resonator-based delay lines and an optical sideband manipulator that renders the circuit outputs equivalent to those of intensity-modulated MWP beamformers. These functionalities allow the system to employ low-circuit-complexity modulators and detectors, which brings significant benefits on the system construction cost and operation stability. The functionalities of the proposed MWP beamformer circuits were verified in experimental demonstrations performed on two sample circuits realized in Si(3)N(4)/SiO(2) waveguide technology. The measurements exhibit a 2 × 1 beamforming effect for an instantaneous RF transmission band of 3‒7 GHz, which is, to our best knowledge, the first verification of on-chip MWP beamformer circuits operating with PM and DD.

Integrated CARS source based on seeded four-wave mixing in silicon nitride.

We present a theoretical investigation of an integrated nonlinear light source for coherent anti-Stokes Raman scattering (CARS) based on silicon nitride waveguides. Wavelength tunable and temporally synchronized signal and idler pulses are obtained by using seeded four-wave mixing. We find that the calculated input pump power needed for nonlinear wavelength generation is more than one order of magnitude lower than in previously reported approaches based on optical fibers. The tuning range of the wavelength conversion was calculated to be 1418 nm to 1518 nm (idler) and 788 nm to 857 nm (signal), which corresponds to a coverage of vibrational transitions from 2350 cm-1 to 2810 cm-1. A maximum conversion efficiency of 19.1% at a peak pump power of 300 W is predicted.

Silicon nitride microwave photonic circuits.

We present an overview of several microwave photonic processing functionalities based on combinations of Mach-Zehnder and ring resonator filters using the high index contrast silicon nitride (TriPleX™) waveguide technology. All functionalities are built using the same basic building blocks, namely straight waveguides, phase tuning elements and directional couplers. We recall previously shown measurements on high spurious free dynamic range microwave photonic (MWP) link, ultra-wideband pulse generation, instantaneous frequency measurements, Hilbert transformers, microwave polarization networks and demonstrate new measurements and functionalities on a 16 channel optical beamforming network and modulation format transformer as well as an outlook on future microwave photonic platform integration, which will lead to a significantly reduced footprint and thereby enables the path to commercially viable MWP systems.

The noise-limited-resolution for stimulated emission depletion microscopy of diffusing particles.

With recent developments in microscopy, such as stimulated emission depletion (STED) microscopy, far-field imaging at resolutions better than the diffraction limit is now a commercially available technique. Here, we show that, in the special case of a diffusive regime, the noise-limited resolution of STED imaging is independent of the saturation intensity of the fluorescent label. Thermal motion limits the signal integration time, which, for a given excited-state lifetime, limits the total number of photons available for detection.

Ellipsometry with randomly varying polarization states.

We show that, under the right conditions, one can make highly accurate polarization-based measurements without knowing the absolute polarization state of the probing light field. It is shown that light, passed through a randomly varying birefringent material has a well-defined orbit on the Poincar sphere, which we term a generalized polarization state, that is preserved. Changes to the generalized polarization state can then be used in place of the absolute polarization states that make up the generalized state, to measure the change in polarization due to a sample under investigation. We illustrate the usefulness of this analysis approach by demonstrating fiber-based ellipsometry, where the polarization state of the probe light is unknown, and, yet, the ellipsometric angles of the investigated sample (Ψ and Δ) are obtained with an accuracy comparable to that of conventional ellipsometry instruments by measuring changes to the generalized polarization state.