Evidence for Trans-Oligoene Chain Formation in Graphene Induced by Iodine.

Functionalization of pristine graphene by hydrogen and fluorine is well studied, resulting in graphane and fluorographene structures. In contrast, functionalization of pristine graphene with iodine has not been reported. Here, the functionalization of graphene with iodine using photochemical activation is presented, which is thermally reversible at 400 °C. Additional dispersive dominant Raman modes that are probed by resonance Raman spectroscopy are observed. Additionally, iodinated graphene is probed by Kelvin probe force microscopy and by transport measurements showing p-doping surpassing non-covalent iodine doping by charge transfer-complex formation. The emergent Raman modes combined with strong p-doping indicate that iodine functionalization is distinct from simple iodine doping. A reaction mechanism based on these findings is proposed, identifying the large size of iodine atoms as the probable cause governing regiochemically controlled addition due to steric hinderance of reactive sites. The modification of the electronic structure is explained by the confinement of 1D trans-oligoene chains between sp3-defects. These results demonstrate the uniqueness of iodine reactivity toward graphene and the modification of the electronic structure of iodinated graphene, highlighting its dependence on the spatial arrangement of substituents.

Probing the Formation of Dark Interlayer Excitons via Ultrafast Photocurrent.

Optically dark excitons determine a wide range of properties of photoexcited semiconductors yet are hard to access via conventional time-resolved spectroscopies. Here, we develop a time-resolved ultrafast photocurrent technique (trPC) to probe the formation dynamics of optically dark excitons. The nonlinear nature of the trPC makes it particularly sensitive to the formation of excitons occurring at the femtosecond time scale after the excitation. As a proof of principle, we extract the interlayer exciton formation time of 0.4 ps at 160 µJ/cm2 fluence in a MoS2/MoSe2 heterostructure and show that this time decreases with fluence. In addition, our approach provides access to the dynamics of carriers and their interlayer transport. Overall, our work establishes trPC as a technique to study dark excitons in various systems that are hard to probe by other approaches.

Nanomechanical Spectroscopy of 2D Materials.

We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a high Q silicon nitride nanomechanical resonator illuminated by a wavelength-tunable laser source. From the heating-related frequency shift of the resonator as well as its optical reflection measured as a function of photon energy, we obtain the real and imaginary parts of the dielectric function. Our measurements are unaffected by substrate-related screening and do not require any assumptions on the underling optical constants. This fast (τrise ∼ 135 ns), sensitive (noise-equivalent power = 90⁣pW√Hz), and broadband (1.2-3.1 eV, extendable to UV-THz) method provides an attractive alternative to spectroscopic or ellipsometric characterization techniques.

Tunable Graphene Phononic Crystal.

In the field of phononics, periodic patterning controls vibrations and thereby the flow of heat and sound in matter. Bandgaps arising in such phononic crystals (PnCs) realize low-dissipation vibrational modes and enable applications toward mechanical qubits, efficient waveguides, and state-of-the-art sensing. Here, we combine phononics and two-dimensional materials and explore tuning of PnCs via applied mechanical pressure. To this end, we fabricate the thinnest possible PnC from monolayer graphene and simulate its vibrational properties. We find a bandgap in the megahertz regime within which we localize a defect mode with a small effective mass of 0.72 ag = 0.002 mphysical. We exploit graphene's flexibility and simulate mechanical tuning of a finite size PnC. Under electrostatic pressure up to 30 kPa, we observe an upshift in frequency of the entire phononic system by ∼350%. At the same time, the defect mode stays within the bandgap and remains localized, suggesting a high-quality, dynamically tunable mechanical system.

Spin/Valley Coupled Dynamics of Electrons and Holes at the MoS2-MoSe2 Interface.

The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure MoS2-MoSe2 to study optical pumping of spin/valley polarized carriers across the interface and to elucidate the mechanisms governing their subsequent relaxation. By applying time-resolved Kerr and reflectivity spectroscopies, we find that the photoexcited carriers conserve their spin for both tunneling directions across the interface. Following this, we measure dramatically different spin/valley depolarization rates for electrons and holes, ∼30 and <1 ns-1, respectively, and show that this difference relates to the disparity in the spin-orbit splitting in conduction and valence bands of TMDs. Our work provides insights into the spin/valley dynamics of photoexcited carriers unaffected by complex excitonic processes and establishes TMD heterostructures as generators of spin currents in spin/valleytronic devices.

Intrinsic and Extrinsic Defect-Related Excitons in TMDCs.

We investigate the excitonic peak associated with defects and disorder in low-temperature photoluminescence of monolayer transition metal dichalcogenides (TMDCs). To uncover the intrinsic origin of defect-related (D) excitons, we study their dependence on gate voltage, excitation power, and temperature in a prototypical TMDC monolayer MoS2. Our results suggest that D excitons are neutral excitons bound to ionized donor levels, likely related to sulfur vacancies, with a density of 7 × 1011 cm-2. To study the extrinsic contribution to D excitons, we controllably deposit oxygen molecules in situ onto the surface of MoS2 kept at cryogenic temperature. We find that, in addition to trivial p-doping of 3 × 1012 cm-2, oxygen affects the D excitons, likely by functionalizing the defect sites. Combined, our results uncover the origin of D excitons, suggest an approach to track the functionalization of TMDCs, to benchmark device quality, and pave the way toward exciton engineering in hybrid organic-inorganic TMDC devices.

Giant Tunable Mechanical Nonlinearity in Graphene-Silicon Nitride Hybrid Resonator.

High quality factor mechanical resonators have shown great promise in the development of classical and quantum technologies. Simultaneously, progress has been made in developing controlled mechanical nonlinearity. Here, we combine these two directions of progress in a single platform consisting of coupled silicon nitride (SiNx) and graphene mechanical resonators. We show that nonlinear response can be induced on a large area SiNx resonator mode and can be efficiently controlled by coupling it to a gate-tunable, freely suspended graphene mode. The induced nonlinear response of the hybrid modes, as measured on the SiNx resonator surface is giant, with one of the highest measured Duffing constants. We observe a novel phononic frequency comb which we use as an alternate validation of the measured values, along with numerical simulations which are in overall agreement with the measurements.

Motion Transduction with Thermo-mechanically Squeezed Graphene Resonator Modes.

There is a recent surge of interest in amplification and detection of tiny motion in the growing field of opto- and electromechanics. Here, we demonstrate widely tunable, broad bandwidth, and high gain all-mechanical motion amplifiers based on graphene/silicon nitride (SiNx) hybrids. In these devices, a tiny motion of a large-area SiNx membrane is transduced to a much larger motion in a graphene drum resonator coupled to SiNx. Furthermore, the thermal noise of graphene is reduced (squeezed) through parametric tension modulation. The parameters of the amplifier are measured by photothermally actuating SiNx and interferometrically detecting graphene displacement. We obtain a displacement power gain of 38 dB and demonstrate 4.7 dB of squeezing, resulting in a detection sensitivity of 3.8 [Formula: see text], close to the thermal noise limit of SiNx.

Selective Functionalization of Graphene at Defect-Activated Sites by Arylazocarboxylic tert-Butyl Esters.

The development of versatile functionalization concepts for graphene is currently in the focus of research. Upon oxo-functionalization of graphite, the full surface of graphene becomes accessible for C-C bond formation to introduce out-of-plane functionality. Herein, we present the arylation of graphene with arylazocarboxylic tert-butyl esters, which generates aryl radicals after activation with an acid. Surprisingly, the degree of functionalization is related to the concentration of lattice vacancy defects in the graphene material. Consequently, graphene materials that are free from lattice defects are not reactive. The reaction can be applied to graphene dispersed in solvents and leads to bitopic functionalization as well as monotopic functionalization when the graphene is deposited on surfaces. As the arylazocarboxylic tert-butyl ester moiety can be attached to various molecules, the presented method paves the way to functional graphene derivatives, with the density of defects determining the degree of functionalization.

Hidden Area and Mechanical Nonlinearities in Freestanding Graphene.

We investigated the effect of out-of-plane crumpling on the mechanical response of graphene membranes. In our experiments, stress was applied to graphene membranes using pressurized gas while the strain state was monitored through two complementary techniques: interferometric profilometry and Raman spectroscopy. By comparing the data obtained through these two techniques, we determined the geometric hidden area which quantifies the crumpling strength. While the devices with hidden area ∼0% obeyed linear mechanics with biaxial stiffness 428±10 N/m, specimens with hidden area in the range 0.5%-1.0% were found to obey an anomalous nonlinear Hooke's law with an exponent ∼0.1.

Hot Electron-Based Near-Infrared Photodetection Using Bilayer MoS2.

Recently, there has been much interest in the extraction of hot electrons generated from surface plasmon decay, as this process can be used to achieve additional bandwidth for both photodetectors and photovoltaics. Hot electrons are typically injected into semiconductors over a Schottky barrier between the metal and semiconductor, enabling generation of photocurrent with below bandgap photon illumination. As a two-dimensional semiconductor single and few layer molybdenum disulfide (MoS2) has been demonstrated to exhibit internal photogain and therefore becomes an attractive hot electron acceptor. Here, we investigate hot electron-based photodetection in a device consisting of bilayer MoS2 integrated with a plasmonic antenna array. We demonstrate sub-bandgap photocurrent originating from the injection of hot electrons into MoS2 as well as photoamplification that yields a photogain of 10(5). The large photogain results in a photoresponsivity of 5.2 A/W at 1070 nm, which is far above similar silicon-based hot electron photodetectors in which no photoamplification is present. This technique is expected to have potential use in future ultracompact near-infrared photodetection and optical memory devices.

Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors.

We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogeneous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient nonradiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 leads to large (∼500%) changes in the FRET rate. This in turn allows for up to ∼75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.

Observation of the fractional quantum Hall effect in graphene.

When electrons are confined in two dimensions and subject to strong magnetic fields, the Coulomb interactions between them can become very strong, leading to the formation of correlated states of matter, such as the fractional quantum Hall liquid. In this strong quantum regime, electrons and magnetic flux quanta bind to form complex composite quasiparticles with fractional electronic charge; these are manifest in transport measurements of the Hall conductivity as rational fractions of the elementary conductance quantum. The experimental discovery of an anomalous integer quantum Hall effect in graphene has enabled the study of a correlated two-dimensional electronic system, in which the interacting electrons behave like massless chiral fermions. However, owing to the prevailing disorder, graphene has so far exhibited only weak signatures of correlated electron phenomena, despite intense experimental and theoretical efforts. Here we report the observation of the fractional quantum Hall effect in ultraclean, suspended graphene. In addition, we show that at low carrier density graphene becomes an insulator with a magnetic-field-tunable energy gap. These newly discovered quantum states offer the opportunity to study correlated Dirac fermions in graphene in the presence of large magnetic fields.

High-field electrical and thermal transport in suspended graphene.

We study the intrinsic transport properties of suspended graphene devices at high fields (≥1 V/µm) and high temperatures (≥1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6 × 10(7) cm/s (1.7 × 10(7) cm/s) and peak (average) thermal conductivity of 530 W m(-1) K(-1) (310 W m(-1) K(-1)) at 1000 K. The saturation velocity is 2-4 times and the thermal conductivity 10-17 times greater than in silicon at such elevated temperatures. However, the thermal conductivity shows a steeper decrease at high temperature than in graphite, consistent with stronger effects of second-order three-phonon scattering. Our analysis of sample-to-sample variation suggests the behavior of "cleaner" devices most closely approaches the intrinsic high-field properties of graphene. This study reveals key features of charge and heat flow in graphene up to device breakdown at ~2230 K in vacuum, highlighting remaining unknowns under extreme operating conditions.

Bandgap engineering of strained monolayer and bilayer MoS2.

We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E' Raman mode of MoS2, and extract a Grüneisen parameter of ~1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is approximately linear with strain, ~45 meV/% strain for monolayer MoS2 and ~120 meV/% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ~1%. These observations constitute a demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides.

Strain fingerprinting of exciton valley character in 2D semiconductors.

Intervalley excitons with electron and hole wavefunctions residing in different valleys determine the long-range transport and dynamics observed in many semiconductors. However, these excitons with vanishing oscillator strength do not directly couple to light and, hence, remain largely unstudied. Here, we develop a simple nanomechanical technique to control the energy hierarchy of valleys via their contrasting response to mechanical strain. We use our technique to discover previously inaccessible intervalley excitons associated with K, Γ, or Q valleys in prototypical 2D semiconductors WSe2 and WS2. We also demonstrate a new brightening mechanism, rendering an otherwise "dark" intervalley exciton visible via strain-controlled hybridization with an intravalley exciton. Moreover, we classify various localized excitons from their distinct strain response and achieve large tuning of their energy. Overall, our valley engineering approach establishes a new way to identify intervalley excitons and control their interactions in a diverse class of 2D systems.

Photosystem I on graphene as a highly transparent, photoactive electrode.

We report the fabrication of a hybrid light-harvesting electrode consisting of photosystem I (PSI) proteins extracted from spinach and adsorbed as a monolayer onto electrically contacted, large-area graphene. The transparency of graphene supports the choice of an opaque mediator at elevated concentrations. For example, we report a photocurrent of 550 nA/cm(2) from a monolayer of PSI on graphene in the presence of 20 mM methylene blue, which yields an opaque blue solution. The PSI-modified graphene electrode has a total thickness of less than 10 nm and demonstrates photoactivity that is an order of magnitude larger than that for unmodified graphene, establishing the feasibility of conjoining these nanomaterials as potential constructs in next-generation photovoltaic devices.

Graphene bimetallic-like cantilevers: probing graphene/substrate interactions.

The remarkable mechanical properties of graphene, the thinnest, lightest, and strongest material in existence, are desirable in applications ranging from composite materials to sensors and actuators. Here, we demonstrate that these mechanical properties are strongly affected by the interaction with the substrate onto which graphene is deposited. By measuring the temperature-dependent deflection of graphene/substrate "bimetallic" cantilevers we determine strain, thermal expansion coefficient, and the adhesion force acting on graphene films attached to a substrate. Graphene deposited on silicon nitride (SiN(x)) is under much larger strain, ε(g) ∼ 1.5 × 10(-2), compared to graphene on gold (Au), ε(g) < 10(-3). The thermal expansion coefficient α(g) of graphene attached to SiN(x) is found to be negative, in the range from (- 5... - 1) × 10(-6)K(-1) and smaller in magnitude than α(g) of suspended graphene. We also estimate the interfacial shear strength of the graphene/SiN(x) interface to be ∼1 GPa at room temperature.

Generating intense electric fields in 2D materials by dual ionic gating.

The application of an electric field through two-dimensional materials (2DMs) modifies their properties. For example, a bandgap opens in semimetallic bilayer graphene while the bandgap shrinks in few-layer 2D semiconductors. The maximum electric field strength achievable in conventional devices is limited to ≤0.3 V/nm by the dielectric breakdown of gate dielectrics. Here, we overcome this limit by suspending a 2DM between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, producing an intense electric field larger than 4 V/nm. This field is strong enough to close the bandgap of few-layer WSe2, thereby driving a semiconductor-to-metal transition. The ability to apply fields an order of magnitude higher than what is possible in dielectric-gated devices grants access to previously-inaccessible phenomena occurring in intense electric fields.

High-Power-Density Energy-Harvesting Devices Based on the Anomalous Nernst Effect of Co/Pt Magnetic Multilayers.

The anomalous Nernst effect (ANE) is a thermomagnetic phenomenon with potential applications in thermal energy harvesting. While many recent works studied the approaches to increase the ANE coefficient of materials, relatively little effort was devoted to increasing the power supplied by the effect. Here, we demonstrate a nanofabricated device with record power density generated by the ANE. To accomplish this, we fabricate micrometer-sized devices in which the thermal gradient is 3 orders of magnitude higher than conventional macroscopic devices. In addition, we use Co/Pt multilayers, a system characterized by a high ANE thermopower (∼1 µV/K), low electrical resistivity, and perpendicular magnetic anisotropy. These innovations allow us to obtain power densities of around 13 ± 2 W/cm3. We believe that this design may find uses in harvesting wasted energy, e.g., in electronic devices.