Detalhe da pesquisa
1.
In-depth insights into polarization-dependent light extraction mechanisms of AlGaN-based deep ultraviolet light-emitting diodes.
Opt Express
; 31(10): 15653-15673, 2023 May 08.
Artigo
Inglês
| MEDLINE | ID: mdl-37157661
2.
Upconversion under Photon Trapping in ZnO/BN Nanoarray: An Ultrahigh Responsivity Solar-Blind Photodetecting Paper.
Small
; 18(22): e2200563, 2022 06.
Artigo
Inglês
| MEDLINE | ID: mdl-35289505
3.
Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping.
Phys Chem Chem Phys
; 24(9): 5529-5538, 2022 Mar 02.
Artigo
Inglês
| MEDLINE | ID: mdl-35172325
4.
Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall.
Nanotechnology
; 25(49): 495705, 2014 Dec 12.
Artigo
Inglês
| MEDLINE | ID: mdl-25412649
5.
Rhodium-embedded UV photodetectors based on localized surface plasmon resonance on AlN/GaN.
Nanoscale
; 15(22): 9684-9690, 2023 Jun 08.
Artigo
Inglês
| MEDLINE | ID: mdl-37165668
6.
Enhancing deep-UV emission at 234 nm by introducing a truncated pyramid AlN/GaN nanostructure with fine-tuned multiple facets.
Nanoscale
; 14(3): 653-662, 2022 Jan 20.
Artigo
Inglês
| MEDLINE | ID: mdl-35018953
7.
Towards n-type conductivity in hexagonal boron nitride.
Nat Commun
; 13(1): 3109, 2022 Jun 03.
Artigo
Inglês
| MEDLINE | ID: mdl-35661712
8.
Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED.
Nanoscale Res Lett
; 17(1): 13, 2022 Jan 15.
Artigo
Inglês
| MEDLINE | ID: mdl-35032237
9.
Nonvolatile Electrical Valley Manipulation in WS2 by Ferroelectric Gating.
ACS Nano
; 16(12): 20598-20606, 2022 Dec 27.
Artigo
Inglês
| MEDLINE | ID: mdl-36414329
10.
High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier.
Nanoscale Res Lett
; 17(1): 74, 2022 Aug 15.
Artigo
Inglês
| MEDLINE | ID: mdl-35969318
11.
Colorful Conductive Threads for Wearable Electronics: Transparent Cu-Ag Nanonets.
Adv Sci (Weinh)
; 9(24): e2201111, 2022 08.
Artigo
Inglês
| MEDLINE | ID: mdl-35839473
12.
Unidirectional Elimination of Hydrogen by a Giant Local Field Saves First- and Last-Mile Performances of Semiconductor Devices.
J Phys Chem Lett
; 13(9): 2084-2093, 2022 Mar 10.
Artigo
Inglês
| MEDLINE | ID: mdl-35213162
13.
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes.
Light Sci Appl
; 10: 129, 2021.
Artigo
Inglês
| MEDLINE | ID: mdl-34150202
14.
Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density.
Nanoscale Res Lett
; 16(1): 99, 2021 Jun 03.
Artigo
Inglês
| MEDLINE | ID: mdl-34081221
15.
Non-contact electrical detection of intrinsic local charge and internal electric field at nanointerfaces.
Nanotechnology
; 21(1): 015707, 2010 Jan 08.
Artigo
Inglês
| MEDLINE | ID: mdl-19946168
16.
Programmed Ultrafast Scan Welding of Cu Nanowire Networks with a Pulsed Ultraviolet Laser Beam for Transparent Conductive Electrodes and Flexible Circuits.
ACS Appl Mater Interfaces
; 12(31): 35211-35221, 2020 Aug 05.
Artigo
Inglês
| MEDLINE | ID: mdl-32654479
17.
Cu Nanowires Passivated with Hexagonal Boron Nitride: An Ultrastable, Selectively Transparent Conductor.
ACS Nano
; 14(6): 6761-6773, 2020 Jun 23.
Artigo
Inglês
| MEDLINE | ID: mdl-32401015
18.
Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes through Using Work Function Tunable Cu Nanowires as the Top Transparent Electrode.
J Phys Chem Lett
; 11(7): 2559-2569, 2020 Apr 02.
Artigo
Inglês
| MEDLINE | ID: mdl-32141757
19.
Highly transparent light emitting diodes on graphene encapsulated Cu nanowires network.
Sci Rep
; 8(1): 13721, 2018 Sep 13.
Artigo
Inglês
| MEDLINE | ID: mdl-30213977
20.
p-Type conductivity of hexagonal boron nitride as a dielectrically tunable monolayer: modulation doping with magnesium.
Nanoscale
; 10(9): 4361-4369, 2018 Mar 01.
Artigo
Inglês
| MEDLINE | ID: mdl-29446428