Population differences in associations of serotonin transporter promoter polymorphism (5HTTLPR) di- and triallelic genotypes with blood pressure and hypertension prevalence.

Based on prior research finding the 5HTTLPR L allele associated with increased cardiovascular reactivity to laboratory stressors and increased risk of myocardial infarction, we hypothesized that the 5HTTLPR L allele will be associated with increased blood pressure (BP) and increased hypertension prevalence in 2 large nationally representative samples in the United States and Singapore. METHODS: Logistic regression and linear models tested associations between triallelic (L'S', based on rs25531) 5HTTLPR genotypes and hypertension severity and mean systolic and diastolic blood pressure (SBP and DBP) collected during the Wave IV survey of the National Longitudinal Study of Adolescent to Adult Health (Add Health, N=11,815) in 2008-09 and during 2004-07 in 4196 Singaporeans. RESULTS: In US Whites, L' allele carriers had higher SBP (0.9 mm Hg, 95% CI=0.26-1.56) and greater odds (OR=1.23, 95% CI=1.10-1.38) of more severe hypertension than those with S'S' genotypes. In African Americans, L' carriers had lower mean SBP (-1.27mm Hg, 95% CI=-2.53 to -0.01) and lower odds (OR = 0.78, 95% CI=0.65-0.94) of more severe hypertension than those with the S'S' genotype. In African Americans, those with L'L' genotypes had lower DBP (-1.13mm Hg, 95% CI=-2.09 to -0.16) than S' carriers. In Native Americans, L' carriers had lower SBP (-6.05mm Hg, 95% CI=-9.59 to -2.51) and lower odds of hypertension (OR = 0.34, 95% CI=0.13-0.89) than those with the S'S' genotype. In Asian/Pacific Islanders those carrying the L' allele had lower DBP (-1.77mm Hg, 95% CI=-3.16 to -0.38) and lower odds of hypertension (OR = 0.68, 95% CI=0.48-0.96) than those with S'S'. In the Singapore sample S' carriers had higher SBP (3.02mm Hg, 95% CI=0.54-5.51) and DBP (1.90mm Hg, 95% CI=0.49-3.31) than those with the L'L' genotype. CONCLUSIONS: These findings suggest that Whites carrying the L' allele, African Americans and Native Americans with the S'S' genotype, and Asians carrying the S' allele will be found to be at higher risk of developing cardiovascular disease and may benefit from preventive measures.

PDGFRß+/c-kit+ pulp cells are odontoblastic progenitors capable of producing dentin-like structure in vitro and in vivo.

BACKGROUND: Successful pulp regeneration depends on identification of pulp stem cells capable of differentiation under odontoblastic lineage and producing pulp-dentinal like structure. Recent studies demonstrate that platelet-derived growth factor (PDGF) plays an important role in damage repair and tissue regeneration. The aim of this study was to identify a subpopulation of dental pulp cells responsive to PDGF and with dentin regeneration potential. METHODS: Pulp tissues were isolated from 12 freshly extracted human impacted third molars. Pulp cells were sorted by their expression of PDGFRß and stem cell marker genes via flow cytometry. For the selected cells, proliferation was analyzed by a colorimetric cell proliferation assay, differentiation was assessed by real time PCR detection the expression of odontoblast marker genes, and mineralization was evaluated by Alizarin Red S staining. GFP marked PDGFRß+/c-kit+ pulp cells were transplanted into emptied root canals of nude rat lower left incisors. Pulp-dentinal regeneration was examined by immunohistochemistry. RESULTS: PDGFRß+/c-kit+ pulp cells proliferated significantly faster than whole pulp cells. In mineralization media, PDGFRß+/c-kit+ pulp cells were able to develop under odontoblastic linage as demonstrated by a progressively increased expression of DMP1, DSPP, and osteocalcin. BMP2 seemed to enhance whereas PDGF-BB seemed to inhibit odontoblastic differentiation and mineralization of PDGFRß+/c-kit+ pulp cells. In vivo root canal transplantation study revealed globular dentin and pulp-like tissue formation by PDGFRß+/c-kit+ cells. CONCLUSIONS: PDGFRß+/c-kit+ pulp cells appear to have pulp stem cell potential capable of producing dentinal like structure in vitro and in vivo.

Demonstration of a 3D-Assembled Dual-Mode Photodetector Based on Tubular Graphene/III-V Semiconductors Heterostructure and Coplanar Three Electrodes.

3D assembly technology is a cutting-edge methodology for constructing high-performance and multifunctional photodetectors since some attractive photodetection features such as light trapping effect, omnidirectional ability, and high spatial resolution can be introduced. However, there has not been any report of 3D-assembled multimode photodetectors owing to the lack of design and fabrication guideline of electrodes serving for 3D heterostructures. In this study, a 3D-assembled dual-mode photodetector (3DdmPD) was realized successfully via the clever electrical contact between the rolled-up tubular graphene/GaAs/InGaAs heterostructure and planar metal electrode. Arbitrary switching of three coplanar electrodes makes the as-fabricated tubular 3D photodetector work at the unbiased photodiode mode, which is suitable for energy conservation high-speed photodetection, or the biased photoconductive mode, which favors extremely weak light photodetection, fully showing the advantages of multifunctional detection. In more detail, the Ilight/Idark ratio reached as high as 2 × 104, and a responsivity of 42.3 mA/W, a detectivity of 1.5 × 1010 Jones, as well as a rising/falling time (τr/τf) of 360/370 µs were achieved under the self-driven photodiode mode. Excitingly, 3DdmPD shows omnidirectional photodetection ability at the same time. When 3DdmPD works at the photoconductive mode with 5 V bias, its responsivity is extremely high as 7.9 × 104 A/W and corresponding detectivity is increased to 1.0 × 1011 Jones. Benefiting from the totally independent coplanar electrodes, 3DdmPD is much more easily integrated as arrays that are expected to offer the function of high-speed omnidirectional image-sensing with ultralow power consumption than the planar counterparts which share communal bottom electrodes. We believe that our work can contribute to the progress of 3D-assembled optoelectronic devices.

Formation mechanism and optical properties of InAs quantum dots on the surface of GaAs nanowires.

Formation mechanism and optical properties of InAs quantum dots (QDs) on the surface of GaAs nanowires (NWs) were investigated. This NW-QDs hybrid structure was fabricated by Au-catalyzed metal organic chemical vapor deposition. We found that the formation and distribution of QDs were strongly influenced by the deposition time of InAs as well as the diameter of GaAs NWs. A model based on the adatom diffusion mechanism was proposed to describe the evolution process of the QDs. Photoluminescence emission from the InAs QDs with a peak wavelength of 940 nm was observed at room temperature. The structure also exhibits a decoupling feature that QDs act as gain medium, while NW acts as Fabry-Perot cavity. This hybrid structure could serve as an important element in high-performance NW-based optoelectronic devices, such as near-infrared lasers, optical detectors, and solar cells.

Hybrid integrated photodetector with flat-top steep-edge spectral response.

Hybrid integrated photodetectors with flat-top steep-edge spectral responses that consist of an Si-based multicavity Fabry-Perot (F-P) filter and an InP-based p-i-n absorption structure (with a 0.2 µm In(0.53)Ga(0.47)As absorption layer), have been designed and fabricated. The performance of the hybrid integrated photodetectors is theoretically investigated by including key factors such as the thickness of each cavity, the pairs of each reflecting mirror, and the thickness of the benzocyclobutene bonding layer. The device is fabricated by bonding an Si-based multicavity F-P filter with an InP-based p-i-n absorption structure. A hybrid integrated photodetector with a peak quantum efficiency of 55% around 1549.2 nm, the -0.5 dB band of 0.43 nm, the 25 dB band of 1.06 nm, and 3 dB bandwidth more than 16 GHz, is simultaneously obtained. Based on multicavity F-P structure, this device has good flat-top steep-edge spectral response.

Growth of InAs quantum dots on GaAs nanowires by metal organic chemical vapor deposition.

InAs quantum dots (QDs) are grown epitaxially on Au-catalyst-grown GaAs nanowires (NWs) by metal organic chemical vapor deposition (MOCVD). These QDs are about 10-30 nm in diameter and several nanometers high, formed on the {112} side facets of the GaAs NWs. The QDs are very dense at the base of the NW and gradually sparser toward the top until disappearing at a distance of about 2 µm from the base. It can be concluded that these QDs are formed by adatom diffusion from the substrate as well as the sidewalls of the NWs. The critical diameter of the GaAs NW that is enough to form InAs QDs is between 120 and 160 nm according to incomplete statistics. We also find that these QDs exhibit zinc blende (ZB) structure that is consistent with that of the GaAs NW and their edges are faceted along particular surfaces. This hybrid structure may pave the way for the development of future nanowire-based optoelectronic devices.

A robust, flexible adhesive tape-based SERS substrate fabricated by polymer etching and subsequent Au coating on the exposed SiO2 nanosphere monolayer.

With the rapid development of trace detection, high-performance flexible surface-enhanced Raman scattering (SERS) substrates have enjoyed steady growth of interest. In this paper, a facile method to improve the robustness of the flexible SERS substrate via the synergistic effect of rigid SiO2 nanospheres and flexible tape was demonstrated for the first time. In detail, the spin-coated SiO2 nanosphere monolayer was transferred from the host silicon wafer into the tape by peeling-off process, followed by O2 plasma etching of tape polymer to expose the nanospheres, and final Au coating to form plentiful SERS "hotspots". The as-prepared SERS sample shows a detection limit of Rhodamine 6G (R6G) down to 10-10 M and can afford a 500 times bending-releasing cyclic test. Our research provides a promising strategy to prepare robust SERS substrates which exhibit good potential in practical molecule detection on curved surfaces.

Growth of stacking-faults-free zinc blende GaAs nanowires on Si substrate by using AlGaAs/GaAs buffer layers.

Vertical GaAs nanowires on Si (111) substrate were grown by metal organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. Stacking-faults-free zinc blende nanowires were realized by using AlGaAs/GaAs buffer layers and growing under the optimized conditions, that the alloy droplet act as a catalyst rather than an adatom collector and its size and composition would keep stable during growth. The stable droplet contributes to the growth of stacking-faults-free nanowires. Moreover, by using the buffer layers, epitaxial growth of well-aligned NWs was not limited by the misfit strain induced critical diameter, and the unintentional doping of the GaAs nanowires with Si was reduced.

Repeat expansion and methylation-sensitive triplet-primed polymerase chain reaction for fragile X mental retardation 1 gene screening in institutionalised intellectually disabled individuals.

INTRODUCTION: Fragile X syndrome (FXS) is the most prevalent X-linked intellectual disability (ID) and a leading genetic cause of autism, characterised by cognitive and behavioural impairments. The hyperexpansion of a CGG repeat in the fragile X mental retardation 1 (FMR1) gene leads to abnormal hypermethylation, resulting in the lack or absence of its protein. Tools for establishing the diagnosis of FXS have been extensively developed, including assays based on triplet-primed polymerase chain reaction (TP-PCR) for detection and quantification of the CGG trinucleotide repeat expansion, as well as determination of the methylation status of the alleles. This study aimed to utilise a simple, quick and affordable method for high sensitivity and specificity screening and diagnosis of FXS in institutionalised individuals with ID. METHODS: A total of 109 institutionalised individuals at the Center for Social Rehabilitation of Intellectual Disability Kartini, Temanggung, Central Java, Indonesia, were screened in a three-step process using FastFrax™ Identification, Sizing and Methylation Status Kits. RESULTS: Two samples that were classified as indeterminate with respect to the 41-repeat control at the identification step were subsequently determined to be non-expanded by both sizing and methylation status analyses. Two samples classified as expanded at the identification step were determined to carry full mutation expansions > 200 repeats that were fully methylated using sizing and methylation status analyses, respectively, yielding a disease prevalence of 1.83%. CONCLUSION: Repeat expansion and methylation-specific TP-PCR is practical, effective and inexpensive for the diagnosis of FXS, especially in high-risk populations of individuals with ID of undetermined aetiology.

Reconfigurable multi-channel WDM drop module using a tunable wavelength-selective photodetector array.

An integrated reconfigurable four-channel wavelength-division-multiplexed drop module for use in the long-wavelength was demonstrated using a tunable wavelength-selective photodetector array. The array consists of an InP-based p-i-n absorption structure and a GaAs-based multistep Fabry-Pérot filtering cavity. The high quality GaAs/InP heteroepitaxy was realized by employing a thin low temperature buffer layer. The GaAs-based multistep cavity was fabricated by wet etching and regrowth. The dropped central wavelengths were 1538, 1550, 1559, and 1570nm. The tunable range reached 10nm with a tuning power efficiency of 14.2nm/W. A spectral linewidth less than 0.5nm (FWHM), a 3dB bandwidth of 9.2GHz, and the peak quantum efficiencies from 13% to 20% were simultaneously obtained, in agreement with the theoretical simulation.