Thin-film lithium niobate circulator-free dispersion compensator in a time-lens system for femtosecond-pulse generation.

We demonstrate a circulator-free thin-film lithium niobate (TFLN) dispersion compensator based on the cascading 2 × 2 multimode interferometer (MMI) and two identical chirped Bragg gratings (CBGs). The cascaded MMI-CBG structure provides a dispersion value of 920 ps/nm/m over a 20 nm bandwidth covering 1537 to 1557 nm, featuring a compact footprint of 1 mm × 0.7 mm. Utilizing this device within a TFLN electro-optic time-lens system, we successfully generate 863-fs pulses at a 37 GHz repetition rate. Our compact, scalable, low-loss, and circulator-free dispersion compensator is the building block for the efficient generation of high-peak-power femtosecond laser pulses.

Bias-drift insensitive full-field frequency response characterization of a thin-film lithium niobate-based intensity modulator.

We propose a rapid and precise scheme for characterizing the full-field frequency response of a thin-film lithium niobate-based intensity modulator (TFLN-IM) via a specially designed multi-tone microwave signal. Our proposed scheme remains insensitive to the bias-drift of IM. Experimental verification is implemented with a self-packaged TFLN-IM with a 3 dB bandwidth of 30 GHz. In comparison with the vector network analyzer (VNA) characterization results, the deviation values of the amplitude-frequency response (AFR) and phase-frequency response (PFR) within the 50 GHz bandwidth are below 0.3 dB and 0.15 rad, respectively. When the bias is drifted within 90% of the Vπ range, the deviation fluctuation values of AFR and PFR are less than 0.3 dB and 0.05 rad, respectively. With the help of the full-field response results, we can pre-compensate the TFLN-IM for the 64 Gbaud PAM-4 signals under the back-to-back (B2B) transmission, achieving a received optical power (ROP) gain of 2.3 dB. The versatility of our proposed full-field response characterization scheme can extend to various optical transceivers, offering the advantage of low cost, robust operation, and flexible implementation.

Arbitrary-ratio 1 × 2 optical power splitter based on thin-film lithium niobate.

Optical power splitters (OPSs) have been widely used in photonic integrated circuits, but an OPS with a large fabrication tolerance and free choice of power splitting ratio (PSR) is still highly desired for thin-film lithium niobate (TFLN) platform. Here, we propose and experimentally demonstrate several 1 × 2 OPSs with PSRs from 50:50 to 5:95 using TFLN platform. The proposed devices are built by multimode interference structure to achieve a broad bandwidth and large fabrication tolerance. Various PSRs can be obtained by adjusting the geometry structure of the multimode interference region. All of our fabricated devices feature an insertion loss lower than 0.3 dB at the wavelength of 1550 nm, and a PSR variation less than 3% in the range of 1520 nm to 1590 nm.

C-Band optical 90-degree hybrid using thin film lithium niobate.

The integrated optical 90-degree hybrid is a crucial component for coherent receivers. Here, we simulate and fabricate a 4 × 4 multimode interference coupler as a 90-degree hybrid using thin film lithium niobate (TFLN). The device features low loss (0.37 dB), high common mode rejection ratio (over 22 dB), compact footprint, and small phase error (below 2°) within the whole C-band experimentally, which is promising for integration with coherent modulators and photodetectors for TFLN-based high-bandwidth optical coherent transceivers.

Advances in integrated ultra-wideband electro-optic modulators [Invited].

Increasing data traffic and bandwidth-hungry applications require electro-optic modulators with ultra-wide modulation bandwidth for cost-efficient optical networks. Thus far, integrated solutions have emerged to provide high bandwidth and low energy consumption in compact sizes. Here, we review the design guidelines and delicate structures for higher bandwidth, applying them to lumped-element and traveling-wave electrodes. Additionally, we focus on candidate material platforms with the potential for ultra-wideband optical systems. By comparing the superiority and mechanism limitations of different integrated modulators, we design a future roadmap based on the recent advances.

Widely tunable O-band lithium niobite/III-V transmitter.

The ever-increasing traffic has been driving the demand for compact, high-speed, and low-power-consumption optical transmitters. Thin-film lithium niobite (TFLN) platforms have emerged as promising photonic integrated solutions for next-generation optical transmitters. In this study, we demonstrated the first widely tunable optical transmitter based on a butt-coupling a TFLN modulator with an electrically pumped tunable laser. The tunable laser exhibited a side-mode suppression ratio of > 60 dB, linewidth of 475 kHz, and wavelength-tuning range of over 40 nm. The TFLN modulator presented a voltage-length product of 2.9 V·cm and an electro-optic response of 1.5 dB roll-off at 50 GHz. The optical transmitter support data rate was as high as 160 Gb/s.

Thermally tunable and efficient second-harmonic generation on thin-film lithium niobate with integrated micro-heater.

In this Letter, we report thermo-optic tunable and efficient second-harmonic generation (SHG) based on an X-cut periodically poled lithium niobate (PPLN) waveguide. By applying an on-chip heater with thermo-isolation trenches and combining a type-0 quasi-phase matching mechanism, we experimentally achieve a high on-chip SHG conversion efficiency of 2500-3000% W-1 cm-2 and a large tuning power efficiency of 94 pm/mW inside a single 5-mm-long straight PPLN waveguide. Our design is for energy-efficient, high-performance nonlinear applications, such as wavelength conversion, highly tunable coherent light sources, and photon-pair generation.

Heterogeneously integrated III-V-on-lithium niobate broadband light sources and photodetectors.

Heterogeneous integration of III-V active devices on lithium niobate-on-insulator (LNOI) photonic circuits enable fully integrated transceivers. Here we present the co-integration of InP-based light-emitting diodes (LEDs) and photodetectors on an LNOI photonics platform. Both devices are realized based on the same III-V epitaxial layers stack adhesively bonded on an LNOI waveguide circuit. The light is evanescently coupled between the LNOI and III-V waveguide via a multiple-section adiabatic taper. The waveguide-coupled LEDs have a 3-dB bandwidth of 40 nm. The photodetector features a responsivity of 0.38 A/W in the 1550-nm wavelength range and a dark current of 9 nA at -0.5 V at room temperature.

Compact substrate-removed thin-film lithium niobate electro-optic modulator featuring polarization-insensitive operation.

A compact polarization-insensitive electro-optic (EO) modulator, which allows the laser and modulator to be located at different locations while using a standard single-mode fiber to interconnect them, is highly desirable for 5G or future 6G wireless networks. Herein, we propose a modulator based on substrate-removed thin-film lithium niobate. The proposed device exhibits a polarization-dependent loss of 0.35 dB and on-chip loss of approximately 2 dB. The polarization insensitivity of the proposed device was experimentally demonstrated using a four-level pulse-amplitude modulation format at 50 Gbaud (100 Gb/ s).

Efficient four-way vertical coupler array for chip-scale space-division-multiplexing applications.

We propose and demonstrate a three-dimensional nano-printed four-channel vertical coupler array on the silicon-on-insulator platform for efficient chip-to-multicore fiber coupling. The proposed structure provides less than 1 dB loss in a single lane and around 2-4 dB loss in multicore fiber coupling, over 100 nm 1 dB bandwidth, and large 1 dB misalignment tolerances of more than 5 µm in the xy plane and 20 µm in the z direction. The device shows great promise for photonic integrated devices for space-division-multiplexing technology based on multicore fiber.

Reconfigurable silicon bandpass filters based on cascaded Sagnac loop mirrors.

We demonstrate a high-performance reconfigurable bandpass filter implemented by cascaded Sagnac loop mirror (SLM)-based coupled resonator optical waveguides (CROWs) on the silicon-on-insulator platform. By dynamic thermal tuning of the reflectivity in each SLM, the proposed filter can achieve simultaneous 3 dB bandwidth tuning from 8.50 to 20.25 GHz and a central wavelength tuning range of 216.25 GHz. A box-like filtering response with an ultra-high extinction ratio up to 70 dB and an ultra-sharp roll-off of 0.61 are observed in a 6th-order SLM-coupled resonator optical waveguide (SLM-CROW). The proposed reconfigurable SLM-CROW filter can satisfy the demand for next-generation flexible-grid WDM networks.

Low-loss edge-coupling thin-film lithium niobate modulator with an efficient phase shifter: publisher's note.

This publisher's note contains corrections to Opt. Lett.46, 1478 (2021)OPLEDP0146-959210.1364/OL.418996.

Electrically pumped widely tunable O-band hybrid lithium niobite/III-V laser.

Significant improvements in the lithium niobate on insulator (LNOI) platform are pushing LNOI-based laser sources to the forefront of integrated photonics. Here, we report the first, to the best of our knowledge, electrically pumped hybrid lithium niobate/III-V laser by butt coupling an InP-based optical gain chip with a LNOI photonic integrated circuit (PIC). In the PIC, a Vernier filter consisting of two LNOI microring resonators is employed to select the lasing wavelength. A wavelength tuning range of more than 36 nm is achieved in the O band. The hybrid laser has a maximum on-chip optical power of 2.5 mW and threshold current density of 2.5kA/cm2. A side mode suppression ratio better than 60 dB is achieved.

Low-loss edge-coupling thin-film lithium niobate modulator with an efficient phase shifter.

Thin-film lithium-niobate-on-insulator (LNOI) is a very attractive platform for optical interconnect and nonlinear optics. It is essential to enable lithium niobate photonic integrated circuits with low power consumption. Here we present an edge-coupling Mach-Zehnder modulator on the platform with low fiber-chip coupling loss of 0.5 dB/facet, half-wave voltage Vπ of 2.36 V, electro-optic (EO) bandwidth of 60 GHz and an efficient thermal-optic phase shifter with half-wave power of 6.24 mW. In addition, we experimentally demonstrate single-lane 200 Gbit/s data transmission utilizing a discrete multi-tone signal. The LNOI modulator demonstrated here shows great potential in energy-efficient large-capacity optical interconnects.

Photonic integrated quantum key distribution receiver for multiple users.

Integrated photonics has the advantages of miniaturization, low cost, and CMOS compatibility, and it provides a stable, highly integrated, and practical platform for quantum key distribution (QKD). While photonic integration of optical components has greatly reduced the overall cost of QKD systems, single-photon detectors (SPDs) have become the most expensive part of a practical QKD system. In order to circumvent this obstacle and make full use of SPDs, we have designed and fabricated a QKD receiver chip for multiple users. Our chip is based on a time-division multiplexing technique and makes use of a single set of SPDs to support up to four users' QKD. Our proof-of-principle chip-based QKD system is capable of producing an average secret key rate of 13.68 kbps for four users with a quantum bit error rate (QBER) as low as 0.51% over a simulated distance of 20 km in fiber. Our result clearly demonstrates the feasibility of multiplexing SPDs for setting QKD channels with different users using photonic integrated chip and may find applications in the commercialization of quantum communication technology.

Low-loss and broadband fiber-to-chip coupler by 3D fabrication on a silicon photonic platform.

We propose and demonstrate a low-loss fiber-to-chip vertical coupler on the silicon photonic platform by using a 3D two-photon fabrication method. Such a coupler significantly reduces insertion loss, measured to be 1 dB, and provides a wide working wavelength range for both TE and TM polarizations over the entire C-band. Moreover, a large tolerance for misalignment of the coupling fiber, up to 4.5 µm for a 1 dB loss, enables the development of relaxed alignment techniques.

Compact high-efficiency four-mode vortex beam generator within the telecom C-band.

Vortex beams carrying orbital angular momentum have attracted a great deal of attention over the past few years. An integrated vortex beam generator with high efficiency is desirable for wide-ranging applications. Here we demonstrate a highly efficient silicon photonic integrated vortex beam generator based on superposed holographic fork gratings. A metal mirror is used to enhance emission efficiency by reflecting the power leaking down to the substrate back to air. Experimental characterization confirms that the emission efficiency of the generator increases by ${\sim} 5\,{\rm dB}$∼5dB. Moreover, the present device shows preferable features of broadband, polarization diversity, and compact footprint.

Compact high-efficiency four-mode vortex beam generator within the telecom C-band: publisher's note.

This publisher's note contains corrections to Opt. Lett.45, 1607 (2020)OPLEDP0146-959210.1364/OL.385878.

Highly efficient thermo-optic tunable micro-ring resonator based on an LNOI platform: publisher's note.

This publisher's note contains corrections to Opt. Lett.45, 6318 (2020)OPLEDP0146-959210.1364/OL.410192.

Highly efficient thermo-optic tunable micro-ring resonator based on an LNOI platform.

We demonstrate a high-efficiency thermo-optic (TO) tunable micro-ring resonator in thin-film lithium niobate. Thermal insulation trenches around the heated micro-ring resonator and the underlying silicon substrate significantly reduce the heating power consumption and improve the tuning efficiency. Compared to conventional TO devices without thermal insulation trenches, the proposed device achieves a full free spectral range wavelength shift with a 14.9 mW heating power, corresponding to a thermal tuning efficiency of 53.7 pm/mW, a more than 20-fold improvement of tuning efficiency. The approach enables energy-efficient high-performance TO devices such as optical switches, wavelength routers, and other reconfigurable photonic devices.