RESUMO
A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550â nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294â K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45â mVâ K(-1). Operating at 210â K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550â nm with a dark count rate of 1 × 10(8)â Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70â ps being the smallest timing jitter measured.