Efficient 330-Gb/s PAM-8 modulation using silicon microring modulators.

We propose and demonstrate a high-efficiency silicon microring modulator for next-generation optical transmitters operating at line rates above 300 Gb/s. The modulator supports high-order PAM-8 modulation up to 110 Gbaud (330 Gb/s), with a driving voltage of 1.8 Vpp. The small driving voltage and device capacitance yields a dynamic energy consumption of 3.1 fJ/bit. Using the modulator, we compare PAM-8 with ultrahigh baud rate PAM-4 of up to 130 Gbaud (260 Gb/s) and show PAM-8 is better suited for 300-Gb/s lane rate operation in bandwidth-constrained short-reach systems.

C-band 67†GHz silicon photonic microring modulator for dispersion-uncompensated 100 Gbaud PAM-4.

A very-high-bandwidth integrated silicon microring modulator (MRM) designed on a commercial silicon photonics (SiP) platform for C-band operation is presented. The MRM has a 3 dB electro-optic (EO) bandwidth of over 67 GHz and features a small footprint of 24 µm × 70 µm. Using the MRM, we demonstrate intensity modulation-direct detection (IM-DD) transmission with 4-level pulse amplitude modulation (PAM-4)  signaling of over 100 Gbaud. By utilizing the optical peaking effect and negative chirp in the MRM, we extend the transmission distance, which is limited by the fiber-dispersion-induced frequency fading. Using a standard single-mode fiber (SSMF) for transmission across distances of up to 2 km, we measured the data transmission of 100 Gbaud PAM-4 signals with a bit error rate (BER) under the general 7% hard-decision forward-error correction (HD-FEC) threshold. The MRM enables an extended transmission distance for 100 Gbaud signaling in the C-band without dispersion compensation.