RESUMO
Robust bismuth-based interphases, comprised of bismuth and bismuth oxides, were developed using galvanic replacement reactions. Facilitated Mg atom adsorption and distinct interfacial Mg atom migration were demonstrated, greatly lowering the electrochemical energy penalty (23 mV for the nucleation process and 69 mV for the growth process at 1.0 mA cm-2).
RESUMO
Effective separation of photoexcited carriers and chemisorption of the N2 molecule are two key issues to efficient nitrogen photofixation. The spatial charge separation of BiVO4 with anisotropic exposed facets, namely the transfer of photoexcited electrons and holes to {010} and {110} facets, respectively, helps to enhance the separation ability of photogenerated carriers. Theoretical calculation results predict that a surface oxygen vacancy is easier to form on the (010) facet than on the (110) facet of BiVO4. Accordingly, in this study, enhanced N2 photofixation performance has been achieved for the first time by tuning the exposure of {010} facets of BiVO4.