Phonon signatures for polaron formation in an anharmonic semiconductor.

Mechanistic studies on lead halide perovskites (LHPs) in recent years have suggested charge carrier screening as partially responsible for long carrier diffusion lengths and lifetimes that are key to superior optoelectronic properties. These findings have led to the ferroelectric large polaron proposal, which attributes efficient charge carrier screening to the extended ordering of dipoles from symmetry-breaking unit cells that undergo local structural distortion and break inversion symmetry. It remains an open question whether this proposal applies in general to semiconductors with LHP-like anharmonic and dynamically disordered phonons. Here, we study electron-phonon coupling in Bi2O2Se, a semiconductor which bears resemblance to LHPs in ionic bonding, spin-orbit coupling, band transport with long carrier diffusion lengths and lifetimes, and phonon disorder as revealed by temperature-dependent Raman spectroscopy. Using coherent phonon spectroscopy, we show the strong coupling of an anharmonic phonon mode at 1.50 THz to photo-excited charge carriers, while the Raman excitation of this mode is symmetry-forbidden in the ground-state. Density functional theory calculations show that this mode, originating from the A1g phonon of out-of-plane Bi/Se motion, gains oscillator strength from symmetry-lowering in polaron formation. Specifically, lattice distortion upon ultrafast charge localization results in extended ordering of symmetry-breaking unit cells and a planar polaron wavefunction, namely a two-dimensional polaron in a three-dimensional lattice. This study provides experimental and theoretical insights into charge interaction with anharmonic phonons in Bi2O2Se and suggests ferroelectric polaron formation may be a general principle for efficient charge carrier screening and for defect-tolerant semiconductors.

Imaging Ultrafast Dynamics of Pressure-Driven Phase Transitions in Black Phosphorus and Anomalous Coherent Phonon Softening.

Applying high pressure to effectively modulate the electronic and lattice structures of materials could unravel various physical properties associated with phase transitions. In this work, high-pressure-compatible femtosecond pump-probe microscopy was constructed to study the pressure-dependent ultrafast dynamics in black phosphorus (BP) thin films. We observed pressure-driven evolution of the electronic topological transition and three structural phases as the pressure reached ∼22 GPa, which could be clearly differentiated in the transient absorption images containing spatially resolved ultrafast carrier and coherent phonon dynamics. Surprisingly, an anomalous coherent acoustic phonon mode with pressure softening behavior was observed within the range of ∼3-8 GPa, showing distinct laser power and time dependences. Density functional theory calculations show that this mode, identified as the shear mode along the armchair orientation, gains significant electron-phonon coupling strength from out-of-plane compression that leads to decreased phonon frequency. Our results provide insights into the structure evolution of BP with pressure and hold potential for applications in microelectromechanical devices.

Organic Ligand Engineering for Tailoring Electron-Phonon Coupling in 2D Hybrid Perovskites.

In the emerging two-dimensional organic-inorganic hybrid perovskites, the electronic structures and carrier behaviors are strongly impacted by intrinsic electron-phonon interactions, which have received inadequate attention. In this study, we report an intriguing phenomenon of negative carrier diffusion induced by electron-phonon coupling in (2T)2PbI4. Theoretical calculations reveal that the electron-phonon coupling drives the band alignment in (2T)2PbI4 to alternate between type I and type II heterostructures. As a consequence, photoexcited holes undergo transitions between the organic ligands and inorganic layers, resulting in abnormal carrier transport behavior compared to other two-dimensional hybrid perovskites. These findings provide valuable insights into the role of electron-phonon coupling in shaping the band alignments and carrier behaviors in two-dimensional hybrid perovskites. They also open up exciting avenues for designing and fabricating functional semiconductor heterostructures with tailored properties.

Exploration of the origin of the excellent charge-carrier dynamics in Ruddlesden-Popper oxysulfide perovskite Y2Ti2O5S2.

Although the efficient separation of electron-hole (e-h) pairs is one of the most sought-after electronic characteristics of materials, due to thermally induced atomic motion and other factors, they do not remain separated during the carrier transport process, potentially leading to rapid carrier recombination. Here, we utilized real-time time-dependent density functional theory in combination with nonadiabatic molecular dynamics (NAMD) to explore the separated dynamic transport path within Ruddlesden-Popper oxysulfide perovskite Y2Ti2O5S2 caused by the dielectric layer and phonon frequency difference. The underlying origin of the efficient overall water splitting in Y2Ti2O5S2 is systematically explored. We report the existence of the bi-directional e-h separate-path transport, in which, the electrons transport in the Ti2O5 layer and the holes diffuse in the rock-salt layer. This is in contrast to the conventional e-h separated distribution with a crowded transport channel, as observed in SrTiO3 and hybrid perovskites. Such a unique feature finally results in a long carrier lifetime of 321 ns, larger than that in the SrTiO3 perovskite (160 ns) with only one carrier transport channel. This work provides insights into the carrier transport in lead-free perovskites and yields a novel design strategy for next-generation functionalized optoelectronic devices.

Two Dimensional MOene: From Superconductors to Direct Semiconductors and Weyl Fermions.

The number of semiconducting MXenes with direct band gaps is extremely low; thus, it is highly desirable to broaden the MXene family beyond carbides and nitrides to expand the palette of desired chemical and physical properties. Here, we theoretically report the existence of the single-layer (SL) dititanium oxide 2H-Ti2O MOene (MXene-like 2D transition oxides), showing an Ising superconducting feature. Moreover, SL halogenated 2H- and 1T-Ti2O monolayers display tunable semiconducting features and strong light-harvesting ability. In addition, the external strains can induce Weyl fermions via quantum phase transition in 2H-Ti2OF2 and Ti2OCl2 monolayers. Specifically, 2H- and 1T-Ti2OF2 are direct semiconductors with band gaps of 0.82 and 1.18 eV, respectively. Furthermore, the carrier lifetimes of SL 2H- and 1T-Ti2OF2 are evaluated to be 0.39 and 2.8 ns, respectively. This study extends emerging phenomena in a rich family of 2D MXene-like MOene materials, which provides a novel platform for next-generation optoelectronic and photovoltaic fields.

Effects of oxygen vacancies on the photoexcited carrier lifetime in rutile TiO2.

The photoexcited carrier lifetime in semiconductors plays a crucial role in solar energy conversion processes. The defects or impurities in semiconductors are usually proposed to introduce electron-hole (e-h) recombination centers and consequently reduce the photoexcited carrier lifetime. In this report, we investigate the effects of oxygen vacancies (OV) on the carrier lifetime in rutile TiO2, which has important applications in photocatalysis and photovoltaics. It is found that an OV introduces two excess electrons which form two defect states in the band gap. The lower state is localized on one Ti atom and behaves as a small polaron, and the higher one is a hybrid state contributed by three Ti atoms around the OV. Both the polaron and hybrid states exhibit strong electron-phonon (e-ph) coupling and their charge distributions become more and more delocalized when the temperature increases from 100 to 700 K. Such strong e-ph coupling and charge delocalization enhance the nonadibatic coupling between the electronic states along the hole relaxation path, where the defect states behave as intermediate states, leading to a distinct acceleration of e-h recombination. Our study provides valuable insights to understand the role of defects on photoexcited carrier lifetime in semiconductors.

Dimensionality reduction in machine learning for nonadiabatic molecular dynamics: Effectiveness of elemental sublattices in lead halide perovskites.

Supervised machine learning (ML) and unsupervised ML have been performed on descriptors generated from nonadiabatic (NA) molecular dynamics (MD) trajectories representing non-radiative charge recombination in CsPbI3, a promising solar cell and optoelectronic material. Descriptors generated from every third atom of the iodine sublattice alone are sufficient for a satisfactory prediction of the bandgap and NA coupling for the use in the NA-MD simulation of nonradiative charge recombination, which has a strong influence on material performance. Surprisingly, descriptors based on the cesium sublattice perform better than those of the lead sublattice, even though Cs does not contribute to the relevant wavefunctions, while Pb forms the conduction band and contributes to the valence band. Simplification of the ML models of the NA-MD Hamiltonian achieved by the present analysis helps to overcome the high computational cost of NA-MD through ML and increase the applicability of NA-MD simulations.

Increasing Efficiency of Nonadiabatic Molecular Dynamics by Hamiltonian Interpolation with Kernel Ridge Regression.

Nonadiabatic (NA) molecular dynamics (MD) goes beyond the adiabatic Born-Oppenheimer approximation to account for transitions between electronic states. Such processes are common in molecules and materials used in solar energy, optoelectronics, sensing, and many other fields. NA-MD simulations are much more expensive compared to adiabatic MD due to the need to compute excited state properties and NA couplings (NACs). Similarly, application of machine learning (ML) to NA-MD is more challenging compared with adiabatic MD. We develop an NA-MD simulation strategy in which an adiabatic MD trajectory, which can be generated with a ML force field, is used to sample excitation energies and NACs for a small fraction of geometries, while the properties for the remaining geometries are interpolated with kernel ridge regression (KRR). This ML strategy allows for one to perform NA-MD under the classical path approximation, increasing the computational efficiency by over an order of magnitude. Compared to neural networks, KRR requires little parameter tuning, saving efforts on model building. The developed strategy is demonstrated with two metal halide perovskites that exhibit complicated MD and are actively studied for various applications.

CO2 Photoreduction on Metal Oxide Surface Is Driven by Transient Capture of Hot Electrons: Ab Initio Quantum Dynamics Simulation.

The most critical bottleneck in CO2 photoreduction lies in the activation of CO2 to form an anion radical, CO2•-, or other intermediates by the photoexcited electrons, because CO2 has a high-energy lowest unoccupied molecular orbital (LUMO). Taking rutile TiO2(110) as a prototypical surface, we use time-dependent ab initio nonadiabatic molecular dynamics simulations to reveal that the excitation of bending and antisymmetric stretching vibrations of CO2 can sufficiently stabilize the CO2 LUMO below the conduction band minimum, allowing it to trap photoexcited hot electrons and get reduced. Such vibrational excitations occur by formation of a transient CO2•- adsorbed in an oxygen vacancy. CO2 can trap the hot electrons for nearly 100 fs and dissociate to form CO within 30-40 fs after the trapping. We propose that the activation of the CO2 bending and antisymmetric stretching vibrations driven by hot electrons applies to other CO2 reduction photocatalysts and can be realized by different techniques and material design.

Soft Lattice and Defect Covalency Rationalize Tolerance of ß-CsPbI3 Perovskite Solar Cells to Native Defects.

Although all-inorganic metal halide perovskites (MHPs) have shown tremendous improvement, they are still inferior to the hybrid organic-inorganic MHPs in efficiency. Recently, a conceptually new ß-CsPbI3 perovskite reached 18.4 % efficiency combined with good thermodynamic stability at ambient conditions. We use ab initio non-adiabatic molecular dynamics to show that native point defects in ß-CsPbI3 are generally benign for nonradiative charge recombination, regardless of whether they introduce shallow or deep trap states. These results indicate that MHPs do not follow the simple models used to explain defect-mediated charge recombination in the conventional semiconductors. The strong tolerance is due to the softness of the perovskite lattice, which permits separation of electrons and holes upon defect formation, and only allows carriers to couple to the low-frequency vibrations. Both factors decrease notably the non-adiabatic coupling and slow down the dissipation of energy to heat.

Ultrafast Dynamics of Photongenerated Holes at a CH3OH/TiO2 Rutile Interface.

Photogenerated charge carrier dynamics near molecule/TiO2 interfaces are important for the photocatalytic and photovoltaic processes. To understand this fundamental aspect, we performed a time-domain ab initio nonadiabatic molecular dynamics study of the photogenerated hole dynamics at the CH3OH/rutile TiO2(110) interface. We studied the forward and reverse hole transfer between TiO2 and CH3OH as well as the hole energy relaxation to the valence band maximum. First, we show that the hole-trapping ability of CH3OH depends strongly on the adsorption structure. Only when the CH3OH is deprotonated to form chemisorbed CH3O will ∼15% of the hole be trapped by the molecule. Second, we find that strong fluctuations of the HOMO energies of the adsorbed molecules induced by electron-phonon coupling provide additional channels, which accelerate the hole energy relaxation. Third, we demonstrate that the charge transfer and energy relaxation processes depend significantly on temperature. When the temperature decreases from 100 to 30 K, the forward hole transfer and energy relaxation processes are strongly suppressed because of the reduction of phonon occupation. These results indicate that the molecule/TiO2 energy level alignment, thermal excitation of a phonon, and electron-phonon coupling are the key factors that determine the photogenerated hole dynamics. Our studies provide valuable insights into the photogenerated charge and energy transfer dynamics at molecule/semiconductor interfaces.

Lattice Distortion and Low-Frequency Anharmonic Phonons Suppress Charge Recombination in Lead Halide Perovskites upon Pseudohalide Doping: Time-Domain Ab Initio Analysis.

Perovskite solar cells have witnessed a surge in interest as a promising technology for low-cost, high-efficiency photovoltaics with certified power conversion efficiencies beyond 25%. However, their commercial development is hindered by poor stability and nonradiative losses that restrict their approach to the theoretical efficiency limit. Using ab initio nonadiabatic molecular dynamics, we demonstrate that nonradiative charge recombination is suppressed when the iodide in formamidinium lead iodide (FAPbI3) is partially replaced with pseudohalide anions (SCN-, BF4-, and PF6-). The replacement breaks the symmetry of the system and creates local structural distortion and dynamic disorder, decreasing electron-hole overlap and nonadiabatic electron-vibrational coupling. The charge carrier lifetime is found to increase with increased structural distortion and is the longest for PF6-. This work is fundamentally relevant to the design of high-performance perovskite materials for optoelectronic applications.

Strong Electron-Phonon Coupling Mediates Carrier Transport in BiFeO3.

The electron-phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting impact on the carrier transport property is significant for the development of high-efficiency electronic devices. Here, carrier transport behavior mediated by the electron-phonon coupling in BiFeO3 epitaxial thin films is directly observed. Acoustic phonons are generated by the inverse piezoelectric effect and coupled with photocarriers. Via the electron-phonon coupling, doughnut shape carrier distribution has been observed due to the coupling between hot carriers and phonons. The hot carrier quasi-ballistic transport length can reach 340 nm within 1 ps. The results suggest an effective approach to investigating the effects of electron-phonon interactions with temporal and spatial resolutions, which is of great importance for designing and improving electronic devices.

Interpolating Nonadiabatic Molecular Dynamics Hamiltonian with Inverse Fast Fourier Transform.

Nonadiabatic (NA) molecular dynamics (MD) allows one to investigate far-from-equilibrium processes in nanoscale and molecular materials at the atomistic level and in the time domain, mimicking time-resolved spectroscopic experiments. Ab initio NAMD is limited to about 100 atoms and a few picoseconds, due to computational cost of excitation energies and NA couplings. We develop a straightforward methodology that can extend ab initio quality NAMD to nanoseconds and thousands of atoms. The ab initio NAMD Hamiltonian is sampled and interpolated along a trajectory using a Fourier transform, and then, it is used to perform NAMD with known algorithms. The methodology relies on the classical path approximation, which holds for many materials and processes. To achieve a complete ab initio quality description, the trajectory can be obtained using an ab initio trained machine learning force field. The method is demonstrated with charge carrier trapping and relaxation in hybrid organic-inorganic and all-inorganic metal halide perovskites that exhibit complex dynamics and are actively studied for optoelectronic applications.

Electron-Volt Fluctuation of Defect Levels in Metal Halide Perovskites on a 100 ps Time Scale.

Metal halide perovskites (MHPs) have gained considerable attention due to their excellent optoelectronic performance, which is often attributed to unusual defect properties. We demonstrate that midgap defect levels can exhibit very large and slow energy fluctuations associated with anharmonic acoustic motions. Therefore, care should be taken classifying MHP defects as deep or shallow, since shallow defects may become deep and vice versa. As a consequence, charges from deep levels can escape into bands, and light absorption can be extended to longer wavelengths, improving material performance. The phenomenon, demonstrated with iodine vacancy in CH3NH3PbI3 using a machine learning force field, can be expected for a variety of defects and dopants in many MHPs and other soft inorganic semiconductors. Since large-scale anharmonic motions can be precursors to chemical decomposition, a known problem with MHPs, we propose that materials that are stiffer than MHPs but softer than traditional inorganic semiconductors, such as Si and TiO2, may simultaneously exhibit excellent performance and stability.

High Photoreactivity on a Reconstructed Anatase TiO2(001) Surface Predicted by Ab Initio Nonadiabatic Molecular Dynamics.

Anatase TiO2(001) surface with (4 × 1) reconstruction is proposed to be a highly active catalytic surface. In this work, using time-domain ab initio nonadiabatic molecular dynamics, we reveal that the ridge structure formed by anatase(001) surface reconstruction is the photoreactive site for hole migration and trapping. Moreover, the ridge structure is destroyed by low-coverage CH3OH adsorption, leading to the suppression of its high photoreactivity. However, when the CH3OH coverage is increased and intermolecular hydrogen bonds (H-bonds) form, the ridge structure and its high photoreactivity are restored. Furthermore, the hole trapping dynamics is strongly coherent with intermolecular proton transfer in structures with intermolecular H-bonds. Our study proves that anatase TiO2(001)-(4 × 1) is a highly photoreactive surface where the ridge is the photoreactive site for hole trapping, which is coherent with the proton transfer process.

Fluctuations at Metal Halide Perovskite Grain Boundaries Create Transient Trap States: Machine Learning Assisted Ab Initio Analysis.

All-inorganic perovskites are promising candidates for solar energy and optoelectronic applications, despite their polycrystalline nature with a large density of grain boundaries (GBs) due to facile solution-processed fabrication. GBs exhibit complex atomistic structures undergoing slow rearrangements. By studying evolution of the Σ5(210) CsPbBr3 GB on a nanosecond time scale, comparable to charge carrier lifetimes, we demonstrate that GB deformations appear every ∼100 ps and increase significantly the probability of deep charge traps. However, the deep traps form only transiently for a few hundred femtoseconds. In contrast, shallow traps appear continuously at the GB. Shallow traps are localized in the GB layer, while deep traps are in a sublayer, which is still distorted from the pristine structure and can be jammed in unfavorable conformations. The GB electronic properties correlate with bond angles, with notable exception of the Br-Br distance, which provides a signature of halide migration along GBs. The transient nature of trap states and localization of electrons and holes at different parts of GBs indicate that charge carrier lifetimes should be long. At the same time, charge mobility can be reduced. The complex, multiscale evolution of geometric and electronic structures of GBs rationalize the contradictory statements made in the literature regarding both benign and detrimental roles of GBs in perovskite performance and provide new atomistic insights into perovskite properties.

Control of Polaronic Behavior and Carrier Lifetimes via Metal and Anion Alloying in Chalcogenide Perovskites.

Transition-metal perovskite chalcogenides (TMPCs) have emerged as lead-free alternatives to lead-halide perovskites and have been currently of increasing interest for optoelectronic applications because of their suitable band gaps, high carrier mobility, strong light absorption, and high stability. Here, we systematically report a study on the effects of Ti- and Se-alloying strategies on polaron behavior and carrier lifetimes in nonradiative recombination. Although such alloying can effectively tune the band gap of BaZrS3, we observe localized small polaron formation upon Ti alloying and large polarons generating in Se alloying. Ti-alloying strengthens the electron-phonon coupling, leading to a reduced carrier lifetime. Remarkably, Se-alloying weakens the electron-phonon coupling and prolongs the nonradiative electron-hole recombination lifetime by up to 60% compared to that in pristine BaZrS3 material. The simulations rationalize the difference in carrier lifetimes in TMPC alloys and provide guidelines for further improvements in TMPC-based photoelectronic devices.

Ultrafast charge transfer coupled to quantum proton motion at molecule/metal oxide interface.

Understanding how the nuclear quantum effects (NQEs) in the hydrogen bond (H-bond) network influence the photoexcited charge transfer at semiconductor/molecule interface is a challenging problem. By combining two kinds of emerging molecular dynamics methods at the ab initio level, the path integral-based molecular dynamics and time-dependent nonadiabatic molecular dynamics, and choosing CH3OH/TiO2 as a prototypical system to study, we find that the quantum proton motion in the H-bond network is strongly coupled with the ultrafast photoexcited charge dynamics at the interface. The hole trapping ability of the adsorbed methanol molecule is notably enhanced by the NQEs, and thus, it behaves as a hole scavenger on titanium dioxide. The critical role of the H-bond network is confirmed by in situ scanning tunneling microscope measurements with ultraviolet light illumination. It is concluded the quantum proton motion in the H-bond network plays a critical role in influencing the energy conversion efficiency based on photoexcitation.