Hierarchical CdSe-gold hybrid nanocrystals: synthesis and optical properties.

The synthesis of hybrid nanostructures with controlled size, shape, composition and morphology has attracted increasing attention due to the fundamental and applicable interest. Here, we demonstrate the synthesis and optical properties of hierarchical CdSe-Au hybrid nanostructures with zinc blende (ZB) CdSe nanocrystals (NCs). For 3.5 nm ZB CdSe NCs, one Au cluster was deposited on each CdSe NC. Nevertheless, several Au clusters were selectively deposited on the apexes of 5 nm and 8 nm ZB CdSe NCs, resulting from the different reactivity of crystal facets. Furthermore, hierarchical CdSe-Au nanostructures with complex morphology were organized with the isolated CdSe-Au hybrid NCs by the coalescence of Au domains on the CdSe-Au hybrid NCs. UV-Vis spectra revealed a red tail upon the deposition of Au clusters. The chemical joint of Au on CdSe NCs was further confirmed by fluorescence quenching. The optical limiting performance of CdSe-Au hybrid NCs dispersed in toluene was investigated at 532 nm using a Nd:YAG laser with the pulse width of 8 ns.

Dislocation luminescence in GaN single crystals under nanoindentation.

This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C. Raman spectroscopy shows evidence for existence of vacancies in the indented region. A comprehensive investigation encompassing cathodoluminescence, Raman, and annealing experiments allow the assignment of dislocation luminescence to conduction-band-acceptor transition involving Ga vacancies. The nanoscale plasticity of GaN can be better understood by considering the dislocation luminescence mechanism.

Nanoscale anisotropic plastic deformation in single crystal GaN.

Elasto-plastic mechanical deformation behaviors of c-plane (0001) and nonpolar GaN single crystals are studied using nanoindentation, cathodoluminescence, and transmission electron microscopy. Nanoindentation tests show that c-plane GaN is less susceptible to plastic deformation and has higher hardness and Young's modulus than the nonpolar GaN. Cathodoluminescence and transmission electron microscopy characterizations of indent-induced plastic deformation reveal that there are two primary slip systems for the c-plane GaN, while there is only one most favorable slip system for the nonplane GaN. We suggest that the anisotropic elasto-plastic mechanical properties of GaN are relative to its anisotropic plastic deformation behavior.PACS: 62.20.fq; 81.05.Ea; 61.72.Lk.