Scaling of the strange-metal scattering in unconventional superconductors.

Marked evolution of properties with minute changes in the doping level is a hallmark of the complex chemistry that governs copper oxide superconductivity as manifested in the celebrated superconducting domes and quantum criticality taking place at precise compositions1-4. The strange-metal state, in which the resistivity varies linearly with temperature, has emerged as a central feature in the normal state of copper oxide superconductors5-9. The ubiquity of this behaviour signals an intimate link between the scattering mechanism and superconductivity10-12. However, a clear quantitative picture of the correlation has been lacking. Here we report the observation of precise quantitative scaling laws among the superconducting transition temperature (Tc), the linear-in-T scattering coefficient (A1) and the doping level (x) in electron-doped copper oxide La2-xCexCuO4 (LCCO). High-resolution characterization of epitaxial composition-spread films, which encompass the entire overdoped range of LCCO, has enabled us to systematically map its structural and transport properties with unprecedented accuracy and with increments of Δx = 0.0015. We have uncovered the relations Tc ~ (xc - x)0.5 ~ (A1□)0.5, where xc is the critical doping in which superconductivity disappears and A1□ is the coefficient of the linear resistivity per CuO2 plane. The striking similarity of the Tc versus A1□ relation among copper oxides, iron-based and organic superconductors may be an indication of a common mechanism of the strange-metal behaviour and unconventional superconductivity in these systems.

Ionic Liquid Gating Induced Protonation of Electron-Doped Cuprate Superconductors.

Ion injection controlled by electric field has attracted growing attention due to its tunability over bulk-like materials. Here, we achieve protonation of an electron-doped high-temperature superconductor, La2-xCexCuO4, by gating in the electrochemical regime of the ionic liquid. Such a process induces a superconductor-insulator transition together with the crossing of the Fermi surface reconstruction point. Applying negative voltages not only can reverse the protonation process but also recovers superconductivity in samples deteriorated by moisture in the ambient. Our work extends the application of electric-field-induced protonation into high-temperature cuprate superconductors.

The origin of the large T c variation in FeSe thin films probed by dual-beam pulsed laser deposition.

FeSe is one of the most enigmatic superconductors. Among the family of iron-based compounds, it has the simplest chemical makeup and structure, and yet it displays superconducting transition temperature ( T c ) spanning 0 to 15 K for thin films, while it is typically 8 K for single crystals. This large variation of T c within one family underscores a key challenge associated with understanding superconductivity in iron chalcogenides. Here, using a dual-beam pulsed laser deposition (PLD) approach, we have fabricated a unique lattice-constant gradient thin film of FeSe which has revealed a clear relationship between the atomic structure and the superconducting transition temperature for the first time. The dual-beam PLD that generates laser fluence gradient inside the plasma plume has resulted in a continuous variation in distribution of edge dislocations within a single film, and a precise correlation between the lattice constant and T c has been observed here, namely, T c ∝ c - c 0 , where c is the c-axis lattice constant (and c 0 is a constant). This explicit relation in conjunction with a theoretical investigation indicates that it is the shifting of the d xy orbital of Fe which plays a governing role in the interplay between nematicity and superconductivity in FeSe. Supplementary Information: The online version contains supplementary material available at 10.1007/s44214-024-00058-0.

Combinatorial laser molecular beam epitaxy system integrated with specialized low-temperature scanning tunneling microscopy.

We present a newly developed facility comprising a combinatorial laser molecular beam epitaxy system and an in situ scanning tunneling microscope (STM). This facility aims at accelerating the materials research in a highly efficient way by advanced high-throughput film synthesis techniques and subsequent fast characterization of surface morphology and electronic states. Compared with uniform films deposited by conventional methods, the so-called combinatorial thin films will be beneficial in determining the accurate phase diagrams of different materials due to the improved control of parameters such as chemical substitution and sample thickness resulting from a rotary-mask method. A specially designed STM working under low-temperature and ultrahigh vacuum conditions is optimized for the characterization of combinatorial thin films in an XY coarse motion range of 15 mm × 15 mm with submicrometer location precision. The overall configuration and some key aspects such as the sample holder design, scanner head, and sample/tip/target transfer mechanism are described in detail. The performance of the device is demonstrated by synthesizing high-quality superconducting FeSe thin films with gradient thickness and imaging surfaces of highly oriented pyrolytic graphite, Au (111), Bi2Sr2CaCu2O8+δ (BSCCO), and FeSe. In addition, we also have obtained clean noise spectra of tunneling junctions and the superconducting energy gap of BSCCO. The successful manufacturing of such a facility opens a new window for the next generation equipment designed for experimental materials research.

Tunable critical temperature for superconductivity in FeSe thin films by pulsed laser deposition.

Stabilized FeSe thin films in ambient pressure with tunable superconducting critical temperature would be a promising candidate for superconducting electronic devices. By carefully controlling the depositions on twelve kinds of substrates using a pulsed laser deposition technique single crystalline FeSe thin films were fabricated. The high quality of the thin films was confirmed by X-ray diffraction with a full width at half maximum of 0.515° in the rocking curve and clear four-fold symmetry in φ-scan. The films have a maximum T c ~ 15 K on the CaF2 substrate and were stable in ambient conditions air for more than half a year. Slightly tuning the stoichiometry of the FeSe targets, the superconducting critical temperature becomes adjustable below 15 K with quite narrow transition width less than 2 K. These FeSe thin films deposited on different substrates are optimized respectively. The Tc of these optimized films show a relation with the out-of-plane (c-axis) lattice parameter of the FeSe films.