Controllable Synthesis of Transferable Ultrathin Bi2Ge(Si)O5 Dielectric Alloys with Composition-Tunable High-κ Properties.

Two-dimensional (2D) alloys hold great promise to serve as important components of 2D transistors, since their properties allow continuous regulation by varying their compositions. However, previous studies are mainly limited to the metallic/semiconducting ones as contact/channel materials, but very few are related to the insulating dielectrics. Here, we use a facile one-step chemical vapor deposition (CVD) method to synthesize ultrathin Bi2SixGe1-xO5 dielectric alloys, whose composition is tunable over the full range of x just by changing the relative ratios of the GeO2/SiO2 precursors. Moreover, their dielectric properties are highly composition-tunable, showing a record-high dielectric constant of >40 among CVD-grown 2D insulators. The vertically grown nature of Bi2GeO5 and Bi2SixGe1-xO5 enables polymer-free transfer and subsequent clean van der Waals integration as the high-κ encapsulation layer to enhance the mobility of 2D semiconductors. Besides, the MoS2 transistors using Bi2SixGe1-xO5 alloy as gate dielectrics exhibit a large Ion/Ioff (>108), ideal subthreshold swing of ∼61 mV/decade, and a small gate hysteresis (∼5 mV). Our work not only gives very few examples on controlled CVD growth of insulating dielectric alloys but also expands the family of 2D single-crystalline high-κ dielectrics.

Single-crystalline van der Waals layered dielectric with high dielectric constant.

The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel1,2. For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration1,2. However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant (κ) dielectric with an atomically flat and dangling-bond-free surface3,4. Here, we report a facile synthesis of a single-crystalline high-κ (κ of roughly 16.5) van der Waals layered dielectric Bi2SeO5. The centimetre-scale single crystal of Bi2SeO5 can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 µm2 and as thin as monolayer. With these Bi2SeO5 nanosheets as dielectric and encapsulation layers, 2D materials such as Bi2O2Se, MoS2 and graphene show improved electronic performances. For example, in 2D Bi2O2Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm2 V-1 s-1 at 1.8 K. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits.

Tunable Topological States in Stacked Chern Insulator Bilayers.

The emergence of intrinsic quantum anomalous Hall (QAH) insulators with a long-range ferromagnetic (FM) order triggers unprecedented prosperity for combining topology and magnetism in low dimensions. Built upon atom-thin Chern insulator monolayer MnBr3, we propose that the topologically nontrivial electronic states can be systematically tuned by inherent magnetic orders and external electric/optical fields in stacked Chern insulator bilayers. The FM bilayer illustrates a high-Chern-number QAH state characterized by both quantized Hall plateaus and specific magneto-optical Kerr angles. In antiferromagnetic bilayers, Berry curvature singularity induced by electrostatic fields or lasers emerges, which further leads to a novel implementation of the layer Hall effect depending on the chirality of irradiated circularly polarized light. These results demonstrate that abundant tunable topological properties can be achieved in stacked Chern insulator bilayers, thereby suggesting a universal routine to modulate d-orbital-dominated topological Dirac fermions.

Size-tunable energy gaps of hydrogen-terminated biphenylene segments.

The electronic properties of hydrogen-terminated biphenylene (BP) segments of different sizes on the sub-nanoscale are explored using density functional theory, and the size dependence of the energy gap is evaluated using a structural parameter as a function of the bond lengths and the electronic density contributions. More importantly, the energy gap is observed to decrease linearly with the reduced hydrogen-to-carbon ratio of the corresponding structures, while the decrease-rate undergoes a diminution of four times at a gap of 0.5 eV due to the transformed distribution of the lowest unoccupied molecular orbital. The results give a deep insight into the size-tunable energy gaps of BPs and provide a possibility for the preparation of hydrogen-terminated carbon materials with a desirable energy gap.

High Mobility and Quantum Oscillations in Semiconducting Bi2O2Te Nanosheets Grown by Chemical Vapor Deposition.

Bi2O2Te has the smallest effective mass and preferable carrier mobility in the Bi2O2X (X = S, Se, Te) family. However, compared to the widely explored Bi2O2Se, the studies on Bi2O2Te are very rare, probably attributed to the lack of efficient ways to achieve the growth of ultrathin films. Herein, ultrathin Bi2O2Te crystals were successfully synthesized by a trace amount of O2-assisted chemical vapor deposition (CVD) method, enabling the observation of ultrahigh low-temperature Hall mobility of >20 000 cm2 V-1 s-1, pronounced Shubnikov-de Haas quantum oscillations, and small effective mass of ∼0.10 m0. Furthermore, few nm thick CVD-grown Bi2O2Te crystals showed high room-temperature Hall mobility (up to 500 cm2 V-1 s-1) both in nonencapsulated and top-gated device configurations and preserved the intrinsic semiconducting behavior with Ion/Ioff ∼ 103 at 300 K and >106 at 80 K. Our work uncovers the veil of semiconducting Bi2O2Te with high mobility and brings new blood into Bi2O2X family.

In-Situ Manipulation of the Magnetic Anisotropy of Single Mn Atom via Molecular Ligands.

Magnetic anisotropy is essential for permanent magnets to maintain their magnetization along specific directions. Understanding and controlling the magnetic anisotropy on a single-molecule scale are challenging but of fundamental importance for the future's spintronic technology. Here, by using scanning tunneling microscopy (STM), we demonstrated the ability to control the magnetic anisotropy by tuning the ligand field at the single-molecule level. We constructed a molecular magnetic complex with a single Mn atom and an organic molecule (4,4'-biphenyldicarbonitrile) as a ligand via atomic manipulation. Inelastic tunneling spectra (IETS) show that the Mn complex has much larger axial magnetic anisotropy than individual Mn atoms, and the anisotropy energy can be tuned by the coupling strength of the ligand. With density functional theory calculations, we revealed that the enhanced magnetic anisotropy of Mn arising from the carbonitrile ligand provides a prototype for the engineering of the magnetism of quantum devices.

Visualizing coexisting surface states in the weak and crystalline topological insulator Bi2TeI.

Dual topological materials are unique topological phases that host coexisting surface states of different topological nature on the same or on different material facets. Here, we show that Bi2TeI is a dual topological insulator. It exhibits band inversions at two time reversal symmetry points of the bulk band, which classify it as a weak topological insulator with metallic states on its 'side' surfaces. The mirror symmetry of the crystal structure concurrently classifies it as a topological crystalline insulator. We investigated Bi2TeI spectroscopically to show the existence of both two-dimensional Dirac surface states, which are susceptible to mirror symmetry breaking, and one-dimensional channels that reside along the step edges. Their mutual coexistence on the step edge, where both facets join, is facilitated by momentum and energy segregation. Our observation of a dual topological insulator should stimulate investigations of other dual topology classes with distinct surface manifestations coexisting at their boundaries.

Probing Nonequilibrium Dynamics of Photoexcited Polarons on a Metal-Oxide Surface with Atomic Precision.

Understanding the nonequilibrium dynamics of photoexcited polarons at the atomic scale is of great importance for improving the performance of photocatalytic and solar-energy materials. Using a pulsed-laser-combined scanning tunneling microscopy and spectroscopy, here we succeeded in resolving the relaxation dynamics of single polarons bound to oxygen vacancies on the surface of a prototypical photocatalyst, rutile TiO_{2}(110). The visible-light excitation of the defect-derived polarons depletes the polaron states and leads to delocalized free electrons in the conduction band, which is further corroborated by ab initio calculations. We found that the trapping time of polarons becomes considerably shorter when the polaron is bound to two surface oxygen vacancies than that to one. In contrast, the lifetime of photogenerated free electrons is insensitive to the atomic-scale distribution of the defects but correlated with the averaged defect density within a nanometer-sized area. Those results shed new light on the photocatalytically active sites at the metal-oxide surface.

Photoexcitation Induced Quantum Dynamics of Charge Density Wave and Emergence of a Collective Mode in 1T-TaS2.

Photoexcitation is a powerful means in distinguishing different interactions and manipulating the states of matter, especially in charge density wave (CDW) materials. The CDW state of 1T-TaS2 has been widely studied experimentally mainly because of its intriguing laser-induced ultrafast responses of electronic and lattice subsystems. However, the microscopic atomic dynamics and underlying electronic mechanism upon photoexcitation remain unclear. Here, we demonstrate photoexcitation induced ultrafast dynamics of CDW in 1T-TaS2 using time-dependent density functional theory molecular dynamics. We discover a novel collective oscillation mode between the CDW state and a transient state induced by photodoping, which is significantly different from thermally induced phonon mode and attributed to the modification of the potential energy surface from laser excitation. In addition, our finding validates nonthermal melting of CDW induced at low light intensities, supporting that conventional hot electron model is inadequate to explain photoinduced dynamics. Our results provide a deep insight into the coherent electron and lattice quantum dynamics during the formation and excitation of CDW in 1T-TaS2.

Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se.

The air-stable and high-mobility two-dimensional (2D) Bi2O2Se semiconductor has emerged as a promising alternative that is complementary to graphene, MoS2, and black phosphorus for next-generation digital applications. However, the room-temperature residual charge carrier concentration of 2D Bi2O2Se nanoplates synthesized so far is as high as about 1019-1020 cm-3, which results in a poor electrostatic gate control and unsuitable threshold voltage, detrimental to the fabrication of high-performance low-power devices. Here, we first present a facile approach for synthesizing 2D Bi2O2Se single crystals with ultralow carrier concentration of ∼1016 cm-3 and high Hall mobility up to 410 cm2 V-1 s-1 simultaneously at room temperature. With optimized conditions, these high-mobility and low-carrier-concentration 2D Bi2O2Se nanoplates with domain sizes greater than 250 µm and thicknesses down to 4 layers (∼2.5 nm) were readily grown by using Se and Bi2O3 powders as coevaporation sources in a dual heating zone chemical vapor deposition (CVD) system. High-quality 2D Bi2O2Se crystals were fabricated into high-performance and low-power transistors, showing excellent current modulation of >106, robust current saturation, and low threshold voltage of -0.4 V. All these features suggest 2D Bi2O2Se as an alternative option for high-performance low-power digital applications.

Exploiting Two-Dimensional Bi2 O2 Se for Trace Oxygen Detection.

We exploit a high-performing resistive-type trace oxygen sensor based on 2D high-mobility semiconducting Bi2 O2 Se nanoplates. Scanning tunneling microscopy combined with first-principle calculations confirms an amorphous Se atomic layer formed on the surface of 2D Bi2 O2 Se exposed to oxygen, which contributes to larger specific surface area and abundant active adsorption sites. Such 2D Bi2 O2 Se oxygen sensors have remarkable oxygen-adsorption induced variations of carrier density/mobility, and exhibit an ultrahigh sensitivity featuring minimum detection limit of 0.25 ppm, long-term stability, high durativity, and wide-range response to concentration up to 400 ppm at room temperature. 2D Bi2 O2 Se arrayed sensors integrated in parallel form are found to possess an oxygen detection minimum of sub-0.25 ppm ascribed to an enhanced signal-to-noise ratio. These advanced sensor characteristics involving ease integration show 2D Bi2 O2 Se is an ideal candidate for trace oxygen detection.

New Pathway for Hot Electron Relaxation in Two-Dimensional Heterostructures.

Two-dimensional (2D) heterostructures composed of transition-metal dichalcogenide atomic layers are the new frontier for novel optoelectronic and photovoltaic device applications. Some key properties that make these materials appealing, yet are not well understood, are ultrafast hole/electron dynamics, interlayer energy transfer and the formation of interlayer hot excitons. Here, we study photoexcited electron/hole dynamics in a representative heterostructure, the MoS2/WSe2 interface, which exhibits type II band alignment. Employing time-dependent density functional theory in the time domain, we observe ultrafast charge dynamics with lifetimes of tens to hundreds of femtoseconds. Most importantly, we report the discovery of an interfacial pathway in 2D heterostructures for the relaxation of photoexcited hot electrons through interlayer hopping, which is significantly faster than intralayer relaxation. This finding is of particular importance for understanding many experimentally observed photoinduced processes, including charge and energy transfer at an ultrafast time scale (<1 ps).

All-Silicon Switchable Magnetoelectric Effect through Interlayer Exchange Coupling.

The magnetoelectric (ME) effect originating from the effective coupling between electric field and magnetism is an exciting frontier in nanoscale science such as magnetic tunneling junction (MTJ), ferroelectric/piezoelectric heterojunctions etc. The realization of switchable ME effect under external electric field in d0 semiconducting materials of single composition is needed especially for all-silicon spintronics applications because of its natural compatibility with current industry. We employ density functional theory (DFT) to reveal that the pristine Si(111)-3×3 R30° (Si3 hereafter) reconstructed surfaces of thin films with a thickness smaller than eleven bilayers support a sizeable linear ME effect with switchable direction of magnetic moment under external electric field. This is achieved through the interlayer exchange coupling effect in the antiferromagnetic regime, where the spin-up and spin-down magnetized density is located on opposite surfaces of Si3 thin films. The obtained coefficient for the linear ME effect can be four times larger than that of ferromagnetic Fe films, which fail to have the reversal switching capabilities. The larger ME effect originates from the spin-dependent screening of the spin-polarized Dirac fermion. The prediction will promote the realization of well-controlled and switchable data storage in all-silicon electronics.

Ordered and reversible hydrogenation of silicene.

The hydrogenation of monatomic silicene sheet on Ag(111) was studied by scanning tunneling microscopy and density functional theory calculations. It was observed that hydrogenation of silicene at room temperature results in a perfectly ordered γ-(3×3) superstructure. A theoretical model, which involves seven H atoms and rearranged buckling of Si atoms, was proposed and agrees with experiments very well. Moreover, by annealing to a moderate temperature, about 450 K, a dehydrogenation process occurs and the clean silicene surface can be fully recovered. Such uniformly ordered and reversible hydrogenation may be useful for tuning the properties of silicene as well as for controllable hydrogen storage.

Bi3O2.5Se2: a two-dimensional high-mobility polar semiconductor with large interlayer and interfacial charge transfer.

Two-dimensional semiconductors with large intrinsic polarity are highly attractive for applications in high-speed electronics, ultrafast and highly sensitive photodetectors and photocatalysis. However, previous studies mainly focus on neutral layered polar 2D materials with limited vertical dipoles and electrostatic potential difference (typically <1.5 eV). Here, using the first-principles calculations, we systematically investigated the polarity of few-layer Bi3O2.5Se2 semiconductors with ultrahigh predicted room-temperature carrier mobility (1790 cm2 V-1 s-1 for the monolayer). Thanks to its unique non-neutral layered structure, few-layer Bi3O2.5Se2 contributes to a substantial interlayer charge transfer (>0.5 e-) and almost the highest electrostatic potential difference (ΔΦ) of ∼4 eV among the experimentally attainable 2D layered materials. More importantly, positioning graphene on different charged layers ([Bi2O2.5]+ or [BiSe2]-) switches the charge transfer direction, inducing selective n-doping or p-doping. Furthermore, we can use polar Bi3O2.5Se2 as an exemplary assisted gate to gain additional holes or electrons except for the external electric field, thus breaking the traditional limitations of gate tunability (∼1014 cm-2) observed in experimental settings. Our work not only expands the family of polar 2D semiconductors, but also makes a conceptual advance on using them as an assisted gate in transistors.

Observation of giant room-temperature anisotropic magnetoresistance in the topological insulator ß-Ag2Te.

Achieving room-temperature high anisotropic magnetoresistance ratios is highly desirable for magnetic sensors with scaled supply voltages and high sensitivities. However, the ratios in heterojunction-free thin films are currently limited to only a few percent at room temperature. Here, we observe a high anisotropic magnetoresistance ratio of -39% and a giant planar Hall effect (520 µΩ⋅cm) at room temperature under 9 T in ß-Ag2Te crystals grown by chemical vapor deposition. We propose a theoretical model of anisotropic scattering - induced by a Dirac cone tilt and modulated by intrinsic properties of effective mass and sound velocity - as a possible origin. Moreover, small-size angle sensors with a Wheatstone bridge configuration were fabricated using the synthesized ß-Ag2Te crystals. The sensors exhibited high output response (240 mV/V), high angle sensitivity (4.2 mV/V/°) and small angle error (<1°). Our work translates the developments in topological insulators to a broader impact on practical applications such as high-field magnetic and angle sensors.

Enhanced Ferromagnetism and Tunable Magnetic Anisotropy in a van der Waals Ferromagnet.

2D van der Waals (vdW) magnets have recently emerged as a promising material system for spintronic device innovations due to their intriguing phenomena in the reduced dimension and simple integration of magnetic heterostructures without the restriction of lattice matching. However, it is still challenging to realize Curie temperature far above room temperature and controllable magnetic anisotropy for spintronics application in 2D vdW magnetic materials. In this work, the pressure-tuned dome-like ferromagnetic-paramagnetic phase diagram in an iron-based 2D layered ferromagnet Fe3GaTe2 is reported. Continuously tunable magnetic anisotropy from out-of-plane to in-plane direction is achieved via the application of pressure. Such behavior is attributed to the competition between intralayer and interlayer exchange interactions and enhanced DOS near the Fermi level. The study presents the prominent properties of pressure-engineered 2D ferromagnetic materials, which can be used in the next-generation spintronic devices.

Anomalous Dependence of Photocarrier Recombination Time on the Polaron Density of TiO2(110).

Polarons play a crucial role in energy conversion, but the microscopic mechanism remains unclear since they are susceptible to local atomic structures. Here, by employing ab initio nonadiabatic dynamic simulations, we investigate electron-hole (e-h) nonradiative recombination at the rutile TiO2(110) surface with varied amounts of oxygen vacancies (Vo). The isolated Vo facilitates e-h recombination through forming polarons compared to that in the defect-free surface. However, aggregated Vo forming clusters induce an order-of-magnitude acceleration of polaron diffusion by enhancing phonon excitations, which blocks the defect-mediated recombination and thus prolongs the photocarrier lifetime. We find that photoelectrons are driven to migrate toward the top surface due to polaron formation. Our results show the many-body effects of defects and polaron effects on determining the overall recombination rate, which has been ignored in the Shockley-Read-Hall model. The findings explain the controversial experimental observations and suggest that engineering Vo aggregation would instead improve photocatalysis efficiencies in polaronic materials.

Transferred Polymer-Encapsulated Metal Electrodes for Electrical Transport Measurements on Ultrathin Air-Sensitive Crystals.

Owing to rapid property degradation after ambient exposure and incompatibility with conventional device fabrication process, electrical transport measurements on air-sensitive 2D materials have always been a big issue. Here, for the first time, a facile one-step polymer-encapsulated electrode transfer (PEET) method applicable for fragile 2D materials is developed, which showed great advantages of damage-free electrodes patterning and in situ polymer encapsulation preventing from H2 O/O2 exposure during the whole electrical measurements process. The ultrathin SmTe2 metals grown by chemical vapor deposition (CVD) are chosen as the prototypical air-sensitive 2D crystals for their poor air-stability, which will become highly insulating when fabricated by conventional lithographic techniques. Nevertheless, the intrinsic electrical properties of CVD-grown SmTe2 nanosheets can be readily investigated by the PEET method instead, showing ultralow contact resistance and high signal/noise ratio. The PEET method can be applicable to other fragile ultrathin magnetic materials, such as (Mn,Cr)Te, to investigate their intrinsic electrical/magnetic properties.

Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric.

Single-crystalline high-κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain free-standing and transferrable ultrathin films. Here, we demonstrate that ultrathin Bi2SiO5 crystals grown by chemical vapor deposition (CVD) can serve as excellent gate dielectric layers for 2D semiconductors, showing a high dielectric constant (>30) and large band gap (~3.8 eV). Unlike other 2D insulators synthesized via in-plane CVD on substrates, vertically grown Bi2SiO5 can be easily transferred onto other substrates by polymer-free mechanical pressing, which greatly facilitates its ideal van der Waals integration with few-layer MoS2 as high-κ dielectrics and screening layers. The Bi2SiO5 gated MoS2 field-effect transistors exhibit an ignorable hysteresis (~3 mV) and low drain induced barrier lowering (~5 mV/V). Our work suggests vertically grown Bi2SiO5 nanoflakes as promising candidates to improve the performance of 2D electronic devices.