RESUMO
A p-n junction diode of cubic boron nitride was made by growing an n-type crystal epitaxially on a p-type seed crystal at a pressure of 55 kilobars and a temperature of about 1700 degrees C. A temperature-difference solvent method was used for the crystal growth, and beryllium and silicon were doped as acceptors and donors, respectively. Formation of the p-n junction was clearly confirmed at 1 bar by rectification characteristics and by existence of a space charge layer of the junction as observed by electron beam induced current measurement. This diode operated at 530 degrees C.
RESUMO
A miniature diamond anvil high-pressure cell 42 mm in diameter, 18 mm thick, and 150 g in weight has been constructed. The cell is loaded into a piston-cylinder type pressing device with an alignment mechanism and compressed to a desired pressure. After the pressure is clamped by three screws, the cell part is taken out. Thereby, in spite of the small and simple cell, pressure can be generated easily and steadily up to 200 kbar. Because the cell is small and light enough to be mounted on a usual goniometer head, and has large openings towards both the top and bottom, it can widely be used as a versatile apparatus for research at high pressure.