Pre-ablation regime light-induced optical changes in nanometer thick metal films.

We report on small optical reflection increases after illumination of nanometer thick gold and aluminum thin films on different substrates with single, femtosecond 400 nm wavelength pump laser pulses, in a pre-ablation fluence regime. In this fluence regime, small, irreversible and subtle morphological changes of the sample are observed. Dark-field, scanning electron, and atomic force microscopy images reveal subwavelength spallation features in the aluminum, and delamination in the gold layers in this pre-ablation regime. All of these morphological changes coincide with minute optical increases in the reflectivity, at the 0.1-2% level, as observed in-situ with a weak probe beam. From Liu-analysis, transfer-matrix, and two-temperature model calculations, we infer that in this pre-ablation regime, the aluminum layers already reach the melting temperature. Electron Backscatter Diffraction measurements show that the Al grains melt and resolidify into bigger grains. This suggests that for Al, resolidification into bigger grains is responsible for both the increased reflection, and the spallation in the pre-ablation regime. For gold, the optical change is most likely due to the etalon effect caused by delamination.

Self-inhibition effect of metal incorporation in nanoscaled semiconductors.

There has been a persistent effort to understand and control the incorporation of metal impurities in semiconductors at nanoscale, as it is important for semiconductor processing from growth, doping to making contact. Previously, the injection of metal atoms into nanoscaled semiconductor, with concentrations orders of magnitude higher than the equilibrium solid solubility, has been reported, which is often deemed to be detrimental. Here our theoretical exploration reveals that this colossal injection is because gold or aluminum atoms tend to substitute Si atoms and thus are not mobile in the lattice of Si. In contrast, the interstitial atoms in the Si lattice such as manganese (Mn) are expected to quickly diffuse out conveniently. Experimentally, we confirm the self-inhibition effect of Mn incorporation in nanoscaled silicon, as no metal atoms can be found in the body of silicon (below 1017 atoms per cm-3) by careful three-dimensional atomic mappings using highly focused ultraviolet-laser-assisted atom-probe tomography. As a result of self-inhibition effect of metal incorporation, the corresponding field-effect devices demonstrate superior transport properties. This finding of self-inhibition effect provides a missing piece for understanding the metal incorporation in semiconductor at nanoscale, which is critical not only for growing nanoscale building blocks, but also for designing and processing metal-semiconductor structures and fine-tuning their properties at nanoscale.

Increasing Photoluminescence Quantum Yield by Nanophotonic Design of Quantum-Confined Halide Perovskite Nanowire Arrays.

High-photoluminescence quantum yield (PLQY) is required to reach optimal performance in solar cells, lasers, and light-emitting diodes (LEDs). Typically, PLQY can be increased by improving the material quality to reduce the nonradiative recombination rate. It is in principle equally effective to improve the optical design by nanostructuring a material to increase light out-coupling efficiency (OCE) and introduce quantum confinement, both of which can increase the radiative recombination rate. However, increased surface recombination typically minimizes nanostructure gains in PLQY. Here a template-guided vapor phase growth of CH3NH3PbI3 (MAPbI3) nanowire (NW) arrays with unprecedented control of NW diameter from the bulk (250 nm) to the quantum confined regime (5.7 nm) is demonstrated, while simultaneously providing a low surface recombination velocity of 18 cm s-1. This enables a 56-fold increase in the internal PLQY, from 0.81% to 45.1%, and a 2.3-fold increase in OCEy to increase the external PLQY by a factor of 130, from 0.33% up to 42.6%, exclusively using nanophotonic design.

Nanoscale Back Contact Perovskite Solar Cell Design for Improved Tandem Efficiency.

Tandem photovoltaics, combining absorber layers with two distinct band gap energies into a single device, provide a practical solution to reduce thermalization losses in solar energy conversion. Traditionally, tandem devices have been assembled using two-terminal (2-T) or four-terminal (4-T) configurations; the 2-T limits the tandem performance due to the series connection requiring current matching, while the standard 4-T configuration requires at least three transparent electrical contacts, which reduce the total collected power due to unavoidable parasitic absorption. Here, we introduce a novel architecture based on a nanoscale back-contact for a thin-film top cell in a three terminal (3-T) configuration. Using coupled optical-electrical modeling, we optimize this architecture for a planar perovskite-silicon tandem, highlighting the roles of nanoscale contacts to reduce the required perovskite electronic quality. For example, with an 18% planar silicon base cell, the 3-T back contact design can reach a 32.9% tandem efficiency with a 10 µm diffusion length perovskite material. Using the same perovskite quality, the 4-T and 2-T configurations only reach 30.2% and 24.8%, respectively. We also confirm that the same 3-T efficiency advantage applies when using 25% efficient textured silicon base cells, where the tandems reach 35.2% and 32.8% efficiency for the 3-T, and 4-T configurations, respectively. Furthermore, because our design is based on the individual subcells being back-contacted, further improvements can be readily made by optimizing the front surface, which is left free for additional antireflective coating, light trapping, surface passivation, and photoluminescence outcoupling enhancements.

Perovskite Nanowire Extrusion.

The defect tolerance of halide perovskite materials has led to efficient optoelectronic devices based on thin-film geometries with unprecedented speed. Moreover, it has motivated research on perovskite nanowires because surface recombination continues to be a major obstacle in realizing efficient nanowire devices. Recently, ordered vertical arrays of perovskite nanowires have been realized, which can benefit from nanophotonic design strategies allowing precise control over light propagation, absorption, and emission. An anodized aluminum oxide template is used to confine the crystallization process, either in the solution or in the vapor phase. This approach, however, results in an unavoidable drawback: only nanowires embedded inside the AAO are obtainable, since the AAO cannot be etched selectively. The requirement for a support matrix originates from the intrinsic difficulty of controlling precise placement, sizes, and shapes of free-standing nanostructures during crystallization, especially in solution. Here we introduce a method to fabricate free-standing solution-based vertical nanowires with arbitrary dimensions. Our scheme also utilizes AAO; however, in contrast to embedding the perovskite inside the matrix, we apply a pressure gradient to extrude the solution from the free-standing templates. The exit profile of the template is subsequently translated into the final semiconductor geometry. The free-standing nanowires are single crystalline and show a PLQY up to ∼29%. In principle, this rapid method is not limited to nanowires but can be extended to uniform and ordered high PLQY single crystalline perovskite nanostructures of different shapes and sizes by fabricating additional masking layers or using specifically shaped nanopore endings.

Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

Transformation of Ag nanowires into semiconducting AgFeS2 nanowires.

We report on the synthesis of semiconducting AgFeS2 nanowires, obtained from the conversion of Ag nanowires. The study of the conversion process shows that the formation of Ag2S nanowires, as an intermediate step, precedes the conversion into AgFeS2 nanowires. The chemical properties of AgFeS2 nanowires were characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray spectroscopy at intermediate steps of the conversion process and show that the temperature at which the reaction takes place is critical to obtaining nanowires as opposed to nanotubes. Optical measurements on nanowire ensembles confirm the semiconducting nature of AgFeS2, with a direct band gap of 0.88 eV.

Solution-phase epitaxial growth of quasi-monocrystalline cuprous oxide on metal nanowires.

The epitaxial growth of monocrystalline semiconductors on metal nanostructures is interesting from both fundamental and applied perspectives. The realization of nanostructures with excellent interfaces and material properties that also have controlled optical resonances can be very challenging. Here we report the synthesis and characterization of metal-semiconductor core-shell nanowires. We demonstrate a solution-phase route to obtain stable core-shell metal-Cu2O nanowires with outstanding control over the resulting structure, in which the noble metal nanowire is used as the nucleation site for epitaxial growth of quasi-monocrystalline Cu2O shells at room temperature in aqueous solution. We use X-ray and electron diffraction, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, photoluminescence spectroscopy, and absorption spectroscopy, as well as density functional theory calculations, to characterize the core-shell nanowires and verify their structure. Metal-semiconductor core-shell nanowires offer several potential advantages over thin film and traditional nanowire architectures as building blocks for photovoltaics, including efficient carrier collection in radial nanowire junctions and strong optical resonances that can be tuned to maximize absorption.

Enhanced thermoelectric performance of rough silicon nanowires.

Approximately 90 per cent of the world's power is generated by heat engines that use fossil fuel combustion as a heat source and typically operate at 30-40 per cent efficiency, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure of merit ZT of their material components, which is a function of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperature. Over the past five decades it has been challenging to increase ZT > 1, since the parameters of ZT are generally interdependent. While nanostructured thermoelectric materials can increase ZT > 1 (refs 2-4), the materials (Bi, Te, Pb, Sb, and Ag) and processes used are not often easy to scale to practically useful dimensions. Here we report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter. These nanowires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, but those with diameters of about 50 nm exhibit 100-fold reduction in thermal conductivity, yielding ZT = 0.6 at room temperature. For such nanowires, the lattice contribution to thermal conductivity approaches the amorphous limit for Si, which cannot be explained by current theories. Although bulk Si is a poor thermoelectric material, by greatly reducing thermal conductivity without much affecting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-performance, scalable thermoelectric materials.

Extreme light absorption in thin semiconductor films wrapped around metal nanowires.

Metallic and dielectric nanostructures have highly tunable resonances that have been used to increase light absorption in a variety of photovoltaic materials and device structures. Metal nanowires have also emerged as a promising candidate for high-performance transparent electrodes for local contacts. In this Letter we propose combining these electrical and optical functions. As a first step, we use rigorous solutions to Maxwell's equations to demonstrate theoretically extreme absorption in semiconductor thin films wrapped around metal nanowires. We show that there are two key principles underlying this extraordinary light trapping effect: (1) maximizing the absorption of each individual resonance by ensuring it is critically coupled and (2) increasing the total number of degenerate resonances. Inserting a metal core into a semiconductor nanowire creates such a degeneracy: polarization-dependent Mie resonances are transformed into polarization-independent Fabry-Pérot-like resonances. We demonstrate that, by reducing the polarization sensitivity and increasing the number of critically coupled modes, this hybrid coaxial nanowire geometry substantially outperforms solid semiconducting nanowires, even though the semiconductor volume is significantly reduced. These results suggest that metal nanowires with semiconductor shells might be ideal building blocks for photovoltaic and solar fuel applications.

Large-area free-standing ultrathin single-crystal silicon as processable materials.

Silicon has been driving the great success of semiconductor industry, and emerging forms of silicon have generated new opportunities in electronics, biotechnology, and energy applications. Here we demonstrate large-area free-standing ultrathin single-crystalline Si at the wafer scale as new Si materials with processability. We fabricated them by KOH etching of the Si wafer and show their uniform thickness from 10 to sub-2 µm. These ultrathin Si exhibits excellent mechanical flexibility and bendability more than those with 20-30 µm thickness in previous study. Unexpectedly, these ultrathin Si materials can be cut with scissors like a piece of paper, and they are robust during various regular fabrication processings including tweezer handling, spin coating, patterning, doping, wet and dry etching, annealing, and metal deposition. We demonstrate the fabrication of planar and double-sided nanocone solar cells and highlight that the processability on both sides of surface together with the interesting property of these free-standing ultrathin Si materials opens up exciting opportunities to generate novel functional devices different from the existing approaches.

Oxygen-Mediated (0D) Cs4PbX6 Formation during Open-Air Thermal Processing Improves Inorganic Perovskite Solar Cell Performance.

The desire to commercialize perovskite solar cells continues to mount, motivating the development of scalable production. Evaluations of the impact of open-air processing have revealed a variety of physical changes in the fabricated devices─with few changes having the capacity to be functionalized. Here, we highlight the beneficial role of ambient oxygen during the open-air thermal processing of metastable γ-CsPbI3-based perovskite thin films and devices. Physiochemical-sensitive probes elucidate oxygen intercalation and the formation of Pb-O bonds in the CsPbI3 crystal, entering via iodine vacancies at the surface, creating superoxide (O2-) through electron transfer reactions with molecular oxygen, which drives the formation of a zero-dimensional Cs4PbI6 capping layer during annealing (>330 °C). The chemical conversion permanently alters the film structure, helping to shield the subsurface perovskite from moisture and introduces lattice anchoring sites, stabilizing otherwise unstable γ-CsPbI3 films. This functional modification is demonstrated in γ-CsPbI2Br perovskite solar cells, boosting the operational stability and photoconversion efficiency of champion devices from 12.7 to 15.4% when annealed in dry air. Such findings prompt a reconsideration of glovebox-based perovskite solar cell research and establish a scenario where device fabrication can in fact greatly benefit from ambient oxygen.

Self-limited plasmonic welding of silver nanowire junctions.

Nanoscience provides many strategies to construct high-performance materials and devices, including solar cells, thermoelectrics, sensors, transistors, and transparent electrodes. Bottom-up fabrication facilitates large-scale chemical synthesis without the need for patterning and etching processes that waste material and create surface defects. However, assembly and contacting procedures still require further development. Here, we demonstrate a light-induced plasmonic nanowelding technique to assemble metallic nanowires into large interconnected networks. The small gaps that form naturally at nanowire junctions enable effective light concentration and heating at the point where the wires need to be joined together. The extreme sensitivity of the heating efficiency on the junction geometry causes the welding process to self-limit when a physical connection between the wires is made. The localized nature of the heating prevents damage to low-thermal-budget substrates such as plastics and polymer solar cells. This work opens new avenues to control light, heat and mass transport at the nanoscale.

Hybrid silicon nanocone-polymer solar cells.

Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 µm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm(2), which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution.

A techno-economic perspective on rigid and flexible perovskite solar modules.

Perovskite solar cells have shown considerable developments in the last decade, and commercial applications are drawing closer. In this article, we present a techno-economic study of perovskite PV technologies. We compare published data on manufacturing costs of single-junction perovskite modules and find that they are dependent on the module design (rigid or flexible) and vary from 10 to almost 100 € per m2. We calculate the LCOE as a function of module efficiency and stability for a set of four module cost scenarios at 12.5, 25, 50, and 100 € per m2. The resulting LCOE varies from 4.3 to 25.5 ct kW-1 h-1 and shows low potential for immediate competition with crystalline silicon PV in the utility sector. Perovskite PV's competitive advantage lies in both lighter and less rigid modules, and in the development of tandem modules together with silicon. We hence extend the LCOE equation to highlight the benefit of producing flexible low-weight modules by roll-to-roll manufacturing, and modify the LCOE maps to showcase the benefits of tandem modules. Based on learning curve analyses applied to the CAPEX of single-junction and tandem modules, we develop three scenarios for the evolution of the LCOE of perovskite modules from 2025 to 2050. Under the optimistic scenarios, we find that the LCOE could reduce to 2.8 ct kW-1 h-1 by 2050.

Nanoparticle Imprint Lithography: From Nanoscale Metrology to Printable Metallic Grids.

Large scale and low-cost nanopatterning of materials is of tremendous interest for optoelectronic devices. Nanoimprint lithography has emerged in recent years as a nanofabrication strategy that is high-throughput and has a resolution comparable to that of electron-beam lithography (EBL). It is enabled by pattern replication of an EBL master into polydimethylsiloxane (PDMS), that is then used to pattern a resist for further processing, or a sol-gel that could be calcinated into a solid material. Although the sol-gel chemistry offers a wide spectrum of material compositions, metals are still difficult to achieve. This gap could be bridged by using colloidal nanoparticles as resist, but deep understanding of the key parameters is still lacking. Here, we use supported metallic nanocubes as a model resist to gain fundamental insights into nanoparticle imprinting. We uncover the major role played by the surfactant layer trapped between nanocubes and substrate, and measure its thickness with subnanometer resolution by using gap plasmon spectroscopy as a metrology platform. This enables us to quantify the van der Waals (VDW) interactions responsible for the friction opposing the nanocube motion, and we find that these are almost in quantitative agreement with the Stokes drag acting on the nanocubes during nanoimprint, that is estimated with a simplified fluid mechanics model. These results reveal that a minimum thickness of surfactant is required, acting as a spacer layer mitigating van der Waals forces between nanocubes and the substrate. In the light of these findings we propose a general method for resist preparation to achieve optimal nanoparticle mobility and show the assembly of printable Ag and Au nanocube grids, that could enable the fabrication of low-cost transparent electrodes of high material quality upon nanocube epitaxy.

Absorption of light in a single-nanowire silicon solar cell decorated with an octahedral silver nanocrystal.

In recent photovoltaic research, nanomaterials have offered two new approaches for trapping light within solar cells to increase their absorption: nanostructuring the absorbing semiconductor and using metallic nanostructures to couple light into the absorbing layer. This work combines these two approaches by decorating a single-nanowire silicon solar cell with an octahedral silver nanocrystal. Wavelength-dependent photocurrent measurements and finite-difference time domain simulations show that increases in photocurrent arise at wavelengths corresponding to the nanocrystal's surface plasmon resonances, while decreases occur at wavelengths corresponding to optical resonances of the nanowire. Scanning photocurrent mapping with submicrometer spatial resolution experimentally confirms that changes in the device's photocurrent come from the silver nanocrystal. These results demonstrate that understanding the interactions between nanoscale absorbers and plasmonic nanostructures is essential to optimizing the efficiency of nanostructured solar cells.

Direct Patterning of CsPbBr3 Nanocrystals via Electron-Beam Lithography.

Lead-halide perovskite (LHP) nanocrystals have proven themselves as an interesting material platform due to their easy synthesis and compositional versatility, allowing for a tunable band gap, strong absorption, and high photoluminescence quantum yield (PLQY). This tunability and performance make LHP nanocrystals interesting for optoelectronic applications. Patterning active materials like these is a useful way to expand their tunability and applicability as it may allow more intricate designs that can improve efficiencies or increase functionality. Based on a technique for II-VI quantum dots, here we pattern colloidal LHP nanocrystals using electron-beam lithography (EBL). We create patterns of LHP nanocrystals on the order of 100s of nanometers to several microns and use these patterns to form intricate designs. The patterning mechanism is induced by ligand cross-linking, which binds adjacent nanocrystals together. We find that the luminescent properties are somewhat diminished after exposure, but that the structures are nonetheless still emissive. We believe that this is an interesting step toward patterning LHP nanocrystals at the nanoscale for device fabrication.

Directional quantum dot emission by soft-stamping on silicon Mie resonators.

We present a soft-stamping method to selectively print a homogenous layer of CdSeTe/ZnS core-shell quantum dots (QDs) on top of an array of Si nanocylinders with Mie-type resonant modes. Using this new method, we gain accurate control of the quantum dot's angular emission through engineered coupling of the QDs to these resonant modes. Using numerical simulations we show that the emission into or away from the Si substrate can be precisely controlled by the QD position on the nanocylinder. QDs centered on a 400 nm diameter nanocylinder surface show 98% emission directionality into the Si substrate. Alternatively, for homogenous ensembles placed over the nanocylinder top-surface, the upward emission is enhanced 10-fold for 150 nm diameter cylinders. Experimental PL intensity measurements corroborate the simulated trends with cylinder diameter. PL lifetime measurements reflect well the variations of the local density of states at the QD position due to coupling to the resonant cylinders. These results demonstrate that the soft imprint technique provides a unique manner to directly integrate optical emitters with a wide range of nanophotonic geometries, with potential applications in LEDs, luminescent solar concentrators, and up- and down-conversion schemes for improved photovoltaics.