Scattering of a Gaussian beam from a row of cylinders with rectangular cross section.

The transverse magnetic Gaussian beam diffraction from a finite number, equally spaced and rectangular cross section dielectric cylinder row is studied. The infinitely long cylinders' axes are perpendicular to the beam's direction of propagation. The cylinder row, with dielectric constant εc=nc2, is treated as a periodic inhomogeneous film, with period ax and thickness wy, bounded by two semi-infinite homogeneous media. With this restriction, the method is valid only for square or rectangular cross section cylinders. The supercell and the plane wave expansion methods are used to calculate the eigenfrequencies and eigenvectors supported for a one-dimensional photonic crystal. Then, these eigenfrequencies and eigenvectors are used to expand the field in the inhomogeneous film. Numerical results are presented for ax greater than λ (the incident light wavelength), wx (the cylinder width), and wg (Gaussian beam waist). Two cases are studied. In the first (second) case, the unit cell contains one cylinder (a cylinder row), which simulates the scattering from a single cylinder (an inhomogeneous thin film). The total integrated scattering in transmission (reflection) shows three well-defined minima (maxima), which are due to interference effects. Its positions can be approximately obtained with the formula λk=4ncwy/k, with k=3, 4, and 6. The total integrated scattering in transmission decreases linearly as a function of the cylinder number.

Synthesis and Characterization of a Semiconductor Diodic Bilayer PbS/CdS Made by the Chemical Bath Deposition Technique.

In this work, we report a heterojunction formed by a PbS/CdS bilayer using the chemical bath deposition (CBD) technique because it is a relatively simple, fast, and low-cost technique; is permitted to obtain high-quality thin films (TFs); and also covers large areas. Some characterizations have been carried out to confirm the identity of the involved bilayer. For the cadmium sulfide (CdS) film, optical properties such as absorption, transmission, reflection, extinction coefficient, and refractive index were measured. Moreover, the bandgap was calculated, and morphology was obtained by scanning electron microscopy (SEM). Also, X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM) were performed for the synthesis of CdS films. On the other hand, for the synthesis of lead sulfide (PbS) films, we performed TEM, energy-dispersive spectroscopy, and XRD. A surface morphological SEM image of the PbS film synthesized was also taken. The multiheterojunction PbS/CdS bilayer was characterized by the current-voltage (I-V) curve, and the behavior of the bilayer was evaluated under the conditions of darkness and controlled fixed lighting, detecting a very slight photosensitivity of the complete diodic device through those measurements. The calculated bandgap for the CdS TF was E g = 2.55 eV, while after a chosen thermal annealing, the bandgap decreased to 2.38 eV. On the other hand, the PbS film presented a cubic structure.