Reduced Recombination and Capacitor-like Charge Buildup in an Organic Heterojunction.

Organic photovoltaic (OPV) efficiencies continue to rise, raising their prospects for solar energy conversion. However, researchers have long considered how to suppress the loss of free carriers by recombination-poor diffusion and significant Coulombic attraction can cause electrons and holes to encounter each other at interfaces close to where they were photogenerated. Using femtosecond transient spectroscopies, we report the nanosecond grow-in of a large transient Stark effect, caused by nanoscale electric fields of ∼487 kV/cm between photogenerated free carriers in the device active layer. We find that particular morphologies of the active layer lead to an energetic cascade for charge carriers, suppressing pathways to recombination, which is ∼2000 times less than predicted by Langevin theory. This in turn leads to the buildup of electric charge in donor and acceptor domains-away from the interface-resistant to bimolecular recombination. Interestingly, this signal is only experimentally obvious in thick films due to the different scaling of electroabsorption and photoinduced absorption signals in transient absorption spectroscopy. Rather than inhibiting device performance, we show that devices up to 600 nm thick maintain efficiencies of >8% because domains can afford much higher carrier densities. These observations suggest that with particular nanoscale morphologies the bulk heterojunction can go beyond its established role in charge photogeneration and can act as a capacitor, where adjacent free charges are held away from the interface and can be protected from bimolecular recombination.

High performance p-type molecular electron donors for OPV applications via alkylthiophene catenation chromophore extension.

The synthesis of key 4-alkyl-substituted 5-(trimethylsilyl)thiophene-2-boronic acid pinacol esters 3 allowed a simplified alkylthiophene catenation process to access bis-, ter-, quater-, and quinquethiophene π-bridges for the synthesis of acceptor-π-bridge-donor- π-bridge-acceptor (A-π-D-π-A) electron donor molecules. Based on the known benzodithiophene-terthiophene-rhodanine (BTR) material, the BXR series of materials, BMR (X = M, monothiophene), BBR (X = B, bithiophene), known BTR (X = T, terthiophene), BQR (X = Q, quaterthiophene), and BPR (X = P(penta), quinquethiophene) were synthesised to examine the influence of chromophore extension on the device performance and stability for OPV applications. The BTxR (x = 4, butyl, and x = 8, octyl) series of materials were synthesised by varying the oligothiophene π-bridge alkyl substituent to examine structure-property relationships in OPV device performance. The devices assembled using electron donors with an extended chromophore (BQR and BPR) are shown to be more thermally stable than the BTR containing devices, with un-optimized efficiencies up to 9.0% PCE. BQR has been incorporated as a secondary donor in ternary blend devices with PTB7-Th resulting in high-performance OPV devices with up to 10.7% PCE.

Organic Photovoltaic Materials--Design, Synthesis and Scale-Up.

This account describes the work of our group in the area of organic photovoltaics in the past six years. The emphasis is on our experiences in the development of the organic materials, their characterization, scale-up and application in devices. We share our insight into the relationship between synthetic methods, molecular properties, bulk material properties and device performance.

Film morphology evolution during solvent vapor annealing of highly efficient small molecule donor/acceptor blends.

Solution-processable small molecule photovoltaics based on the novel molecular donor, benzodithiophene terthiophene rhodanine (BTR), recently have shown maximum power conversion efficiencies above 8 % for active layer thicknesses up to 400 nm, using post process solvent vapor annealing (SVA) with tetrahydrofuran (THF). Here we report an in-situ study on the morphology evolution during SVA using the moderate solvent THF and the good solvent chloroform (CF). The combination of real-time grazing incidence X-ray diffraction (GIXD) and grazing incidence small angle X-ray scattering (GISAXS) allows us to draw a complete picture of the evolution of crystallinity and phase purity during post process annealing. We find that the relative crystallinity compared to the as-cast films is only modestly affected by SVA and solvent choice. However, both the phase purity and the characteristic domain sizes within the film vary significantly and are controlled by the solvent quality as well as exposure time. Using THF, films with high phase purity and desirable characteristic length scales of about 30 nm can be achieved, while the use of CF rapidly leads to excessive film coarsening and less preferable domain sizes on the order of 60 nm, too large for optimized charge separation.