Bridging the gap between surface physics and photonics.

Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.

2.8-µm polarization-maintaining Er fiber laser mode-locked by a GaSb-based SESAM.

A GaSb-based SEmiconductor Saturable Absorber Mirror (SESAM) enables continuous-wave picosecond mode-locked operation with excellent stability of a polarization-maintaining mid-infrared Er:ZBLAN fiber laser. The GaSb-based SESAM mode-locked fiber laser delivers an average output power of 190 mW at 2.76 µm at a repetition rate of 32.07 MHz (corresponding to a pulse energy of ∼6 nJ) and exhibits a high signal-to-noise ratio of ∼80 dB. The polarization extinction ratio is more than 23 dB. By employing an intracavity diffraction grating, the laser wavelength is continuously tunable across 2.706-2.816 µm. Passively Q-switched operation of this laser is also demonstrated.

Low-loss operation of silicon-on-insulator integrated components at 2.6-2.7†µm.

Development of mid-infrared photonics is gaining attention, driven by a multitude of sensing applications requiring increasingly compact and cost-effective photonics systems. To this end, low-loss operation of µm-scale silicon-on-insulator photonic integration elements is demonstrated for the 2.6-2.7 µm wavelength region. The platform utilizes the 3 µm thick silicon core layer technology enabling demonstration of low-loss and low birefringence waveguides. Measurements of record low single mode waveguide propagation losses of 0.56 ± 0.09 dB/cm and bend losses <0.08 dB for various miniaturized bend geometries are presented and validated by simulation. Furthermore, a wavelength filter based on echelle grating that allows to select several operating channels within the 2.64-2.7 µm band, with a linewidth of ∼1.56 nm for each channel is presented.

Widely tunable 2 µm hybrid laser using GaSb semiconductor optical amplifiers and a Si3N4 photonics integrated reflector.

Tunable lasers emitting in the 2-3 µm wavelength range that are compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si3N4 photonic integrated circuits offers an attractive platform. Herein, we utilize the low-loss features of Si3N4 waveguides and demonstrate a hybrid laser comprising a GaSb gain chip with an integrated tunable Si3N4 Vernier mirror. At room temperature, the laser exhibited a maximum output power of 15 mW and a tuning range of ∼90 nm (1937-2026 nm). The low-loss performance of several fundamental Si3N4 building blocks for photonic integrated circuits is also validated. More specifically, the single-mode waveguide exhibits a transmission loss as low as 0.15 dB/cm, the 90° bend has 0.008 dB loss, and the 50/50 Y-branch has an insertion loss of 0.075 dB.

Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides.

The development of integrated photonics experiences an unprecedented growth dynamic, owing to accelerated penetration to new applications. This leads to new requirements in terms of functionality, with the most obvious feature being the increased need for wavelength versatility. To this end, we demonstrate for the first time the flip-chip integration of a GaSb semiconductor optical amplifier with a silicon photonic circuit, addressing the transition of photonic integration technology towards mid-IR wavelengths. In particular, an on-chip hybrid DBR laser emitting in the 2 µm region with an output power of 6 mW at room temperature is demonstrated. Wavelength locking was achieved employing a grating realized using 3 µm thick silicon-on-insulator (SOI) technology. The SOI waveguides exhibit strong mode confinement and low losses, as well as excellent mode matching with GaSb optoelectronic chips ensuring low loss coupling. These narrow line-width laser diodes with an on-chip extended cavity can generate a continuous-wave output power of more than 1 mW even when operated at an elevated temperature of 45°C. The demonstration opens an attractive perspective for the on-chip silicon photonics integration of GaSb gain chips, enabling the development of PICs in a broad spectral range extending from 1.8 µm to beyond 3 µm.

Polarized spectroscopy and SESAM mode-locking of Tm,Ho:CALGO.

A Tm,Ho:CALGO laser passively mode-locked by a GaSb-based SESAM generated pulses as short as 52 fs at a central wavelength of 2015 nm with a broad spectral bandwidth of 82 nm (full width at half maximum) owing to the combined gain profiles of both dopants for σ-polarized light. The average output power reached 376 mW at a repetition rate of 85.65 MHz. In the continuous-wave regime, the laser was power scaled up to 1.01 W at 2080.6 nm with a slope efficiency of 32.0%, a laser threshold of 155 mW and π-polarized emission. Polarized spectroscopic properties of Ho3+ ions in singly doped and codoped CALGO crystals were revisited to explain the observed laser performance.

Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires.

Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm.

We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

Watt-level blue light for precision spectroscopy, laser cooling and trapping of strontium and cadmium atoms.

High-power and narrow-linewidth laser light is a vital tool for atomic physics, being used for example in laser cooling and trapping and precision spectroscopy. Here we produce Watt-level laser radiation at 457.75 nm and 460.86 nm of respective relevance for the cooling transitions of cadmium and strontium atoms. This is achieved via the frequency doubling of a kHz-linewidth vertical-external-cavity surface-emitting laser (VECSEL), which is based on a novel gain chip design enabling lasing at > 2 W in the 915-928 nm region. Following an additional doubling stage, spectroscopy of the 1S0 → 1P1 cadmium transition at 228.87 nm is performed on an atomic beam, with all the transitions from all eight natural isotopes observed in a single continuous sweep of more than 4 GHz in the deep ultraviolet. The absolute value of the transition frequency of 114Cd and the isotope shifts relative to this transition are determined, with values for some of these shifts provided for the first time.

Sub-50 fs pulse generation from a SESAM mode-locked Tm,Ho-codoped calcium aluminate laser.

We report on sub-50 fs pulse generation from a passively mode-locked (ML) Tm,Ho-codoped crystalline laser operating in a 2 µm spectral region. A ${\rm Tm},{\rm Ho}{:}{\rm Ca}({\rm Gd},{\rm Lu}){{\rm AlO}_4}$ laser delivers pulses as short as 46 fs at 2033 nm with an average power of 121 mW at a pulse repetition rate of ${\sim}{78}\;{\rm MHz}$ employing a semiconductor saturable absorber mirror as a saturable absorber. To the best of our knowledge, this result represents the shortest pulses ever generated from a Tm- and/or Ho-based solid-state laser. Polarization switching in the anisotropic gain material is observed in the ML regime without any polarization selection elements which is essential for the shortest pulses.

Use of nanostructured alumina thin films in multilayer anti-reflective coatings.

A new method for modification of planar multilayer structures to create nanostructured aluminum oxide anti-reflection coatings is reported. The method is non-toxic and low-cost, being based on treatment of the coating with heated de-ionized water after the deposition of aluminum oxide. The results show that the method provides a viable alternative for attaining a low reflectance ARC. In particular, a low average reflectivity of ∼3.3% is demonstrated in a broadband spectrum extending from 400 nm to 2000 nm for ARCs deposited on GaInP solar-cells, the typical material used as top-junction in solar cell tandem architectures. Moreover, the process is compatible with volume manufacturing technologies used in photovoltaics, such as ion beam sputtering and electron beam evaporation.

GaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devices.

Several passivation techniques are developed and compared in terms of their ability to preserve the optical properties of close-to-surface InAs/GaAs quantum dots (QDs). In particular, the influence of N-passivation by hydrazine chemical treatment, N-passivation by hydrazine followed by atomic layer deposition (ALD) of AlO x and use of AlN x deposited by plasma-enhanced ALD are reported. The effectiveness of the passivation is benchmarked by measuring the emission linewidths and decay rates of photo-carriers for the near-surface QDs. All three passivation mechanisms resulted in reducing the oxidation of Ga and As atoms at the GaAs surface and consequently in enhancing the room-temperature photoluminescence (PL) intensity. However, long-term stability of the passivation effect is exhibited only by the hydrazine + AlO x process and more significantly by the AlN x method. Moreover, in contrast to the results obtained from hydrazine-based methods, the AlN x passivation strongly reduces the spectral diffusion of the QD exciton lines caused by charge fluctuations at the GaAs surface. The AlN x passivation is found to reduce the surface recombination velocity by three orders of magnitude (corresponding to an increase of room-temperature PL signal by ∼1030 times). The reduction of surface recombination velocity is demonstrated on surface-sensitive GaAs (100) and the passivating effect is stable for more than one year. This effective method of passivation, coupled with its stability in time, is extremely promising for practical device applications such as quantum light sources based on InAs/GaAs QDs positioned in small-volume photonic cavities and hence in the proximity of GaAs-air interface.

High power 739 nm VECSELs for future Yb+ ion cooling.

We present an operational characterization of a vertical-external-cavity surface-emitting laser emitting around 739 nm with over 150 mW in a single fundamental spatial mode. Results show that the laser is capable of oscillating on a single cavity axial mode at 740 nm for up to 22 mW. Tuning of the optical emission is shown to reach 737.3 nm. Furthermore, at best performance, the laser exhibits a slope efficiency of 8.3% and a threshold power of 1.27 W for an output coupler reflectivity of 98%.

Edge-enhanced optical parametric generation in periodically poled LiNbO3.

We demonstrate enhanced optical parametric gains occurring at the edge of periodically poled LiNbO3 (PPLN) regions. Experiments performed in MgO-doped PPLN samples, pumped at 532 nm with parametric signal outputs around 800 nm and 1550 nm, exhibit good agreement with numerical simulations of the nonlinear wave dynamics in the system, based on the assumption of an average refractive index increase Δn = 5.3×10-5 in the PPLN region. Excitation in proximity to the PPLN edge with a pump power of 8.1 mW results in a 3.6-fold output power increase with respect to parametric generation inside the PPLN area.

Precise length definition of active GaAs-based optoelectronic devices for low-loss silicon photonics integration.

The length variation associated with standard cleaving of III-V optoelectronic chips is a major source of loss in the integration with the micron-scale silicon-on-insulator waveguides. To this end, a new, to the best of our knowledge, approach for precise definition of the III-V chip length is reported. The method employs lithography and wet etching of cleave marks outside the active III-V waveguides. The marks follow a specific crystallographic orientation and are used to initiate and guide the cleaving process. Besides minimizing the air gap between the butt-coupled III-V and Si waveguides and hence minimizing the coupling losses, the use of precisely defined length significantly improves the integration yield owing to the increased length uniformity. We apply this technique to defining the lengths of GaAs-based semiconductor optical amplifiers and demonstrate length control with an accuracy better than 250 nm per facet. This variation is more than 1 order of magnitude smaller than with the traditional cleaving methods, resulting in improvement of coupling by several dBs.

The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires.

Precise control and broad tunability of the growth parameters are essential in engineering the optical and electrical properties of semiconductor nanowires (NWs) to make them suitable for practical applications. To this end, we report the effect of As species, namely As2 and As4, on the growth of self-catalyzed GaAs based NWs. The role of As species is further studied in the presence of Te as n-type dopant in GaAs NWs and Sb as an additional group V element to form GaAsSb NWs. Using As4 enhances the growth of NWs in the axial direction over a wide range of growth parameters and diminishes the tendency of Te and Sb to reduce the NW aspect ratio. By extending the axial growth parameter window, As4 allows growth of GaAsSb NWs with up to 47% in Sb composition. On the other hand, As2 favors sidewall growth which enhances the growth in the radial direction. Thus, the selection of As species is critical for tuning not only the NW dimensions, but also the incorporation mechanisms of dopants and ternary elements. Moreover, the commonly observed dependence of twinning on Te and Sb remains unaffected by the As species. By exploiting the extended growth window associated with the use of As4, enhanced Sb incorporation and optical emission up to 1400 nm wavelength range is demonstrated. This wavelength corresponds to the telecom E-band, which opens new prospects for this NW material system in future telecom applications while simultaneously enabling their integration to the silicon photonics platform.

Thin-film InAs/GaAs quantum dot solar cell with planar and pyramidal back reflectors.

Quantum dot solar cells are promising for next-generation photovoltaics owing to their potential for improved device efficiency related to bandgap tailoring and quantum confinement of charge carriers. Yet implementing effective photon management to increase the absorptivity of the quantum dots is instrumental. To this end, the performance of thin-film InAs/GaAs quantum dot solar cells with planar and structured back reflectors is reported. The experimental thin-film solar cells with planar reflectors exhibited a bandgap-voltage offset of 0.3 V with an open circuit voltage of 0.884 V, which is one of the highest values reported for quantum dot solar cells grown by molecular beam epitaxy to our knowledge. Using measured external quantum efficiency and current-voltage characteristics, we parametrize a simulation model that was used to design an advanced reflector with diffractive pyramidal gratings revealing a 12-fold increase of the photocurrent generation in the quantum dot layers.

Zinc-indiffused MgO:PPLN waveguides for blue/UV generation via VECSEL pumping.

We present the design and characterization of a zinc-indiffused periodically poled lithium-niobate ridge waveguide for second-harmonic generation of ∼390nm light from 780 nm. We use a newly developed, broadband near-infrared vertical external-cavity surface-emitting laser (VECSEL) to investigate the potential for lower-footprint nonlinear optical pump sources as an alternative to larger commercial laser systems. We demonstrate a VECSEL with an output power of 500 mW, containing an intracavity birefringent filter for spectral narrowing and wavelength selection. In this first demonstration of using a VECSEL to pump a nonlinear waveguide, we present the ability to generate 1 mW of ∼390nm light with further potential for increased efficiency and size reduction.

SESAM mode-locked Tm:LuYO3 ceramic laser generating 54-fs pulses at 2048 nm.

Mode-locked laser operation near 2.05 µm based on a mixed sesquioxide Tm:LuYO3 ceramic is demonstrated. Continuous-wave and wavelength-tunable operation is also investigated. Employing a GaSb-based semiconductor saturable absorber mirror as a saturable absorber, a maximum average output power of 133 mW is obtained for a pulse duration of 59 fs. Pulses as short as 54 fs, i.e., eight optical cycles are generated at a repetition rate of ∼78MHz with an average output power of 51 mW. To the best of our knowledge, this result represents the shortest pulse duration ever achieved from Tm-based solid-state mode-locked lasers.

Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires.

The typical vapor-liquid-solid growth of nanowires is restricted to a vertical one-dimensional geometry, while there is a broad interest for more complex structures in the context of electronics and photonics applications. Controllable switching of the nanowire growth direction opens up new horizons in the bottom-up engineering of self-assembled nanostructures, for example, to fabricate interconnected nanowires used for quantum transport measurements. In this work, we demonstrate a robust and highly controllable method for deterministic switching of the growth direction of self-catalyzed GaAs nanowires. The method is based on the modification of the droplet-nanowire interface in the annealing stage without any fluxes and subsequent growth in the horizontal direction by a twin-mediated mechanism with indications of a novel type of interface oscillations. A 100% yield of switching the nanowire growth direction from vertical to horizontal is achieved by systematically optimizing the growth parameters. A kinetic model describing the competition of different interface structures is introduced to explain the switching mechanism and the related nanowire geometries. The model also predicts that the growth of similar structures is possible for all vapor-liquid-solid nanowires with commonly observed truncated facets at the growth interface.