Hidden polymorphism of FAPbI3 discovered by Raman spectroscopy.

Formamidinium lead iodide (FAPbI3) can be used in its cubic, black form as a light absorber material in single-junction solar cells. It has a band-gap (1.5 eV) close to the maximum of the Shockley-Queisser limit, and reveals a high absorption coefficient. Its high thermal stability up to 320 °C has also a downside, which is the instability of the photo-active form at room temperature (RT). Thus, the black α-phase transforms at RT with time into a yellow non-photo-active δ-phase. The black phase can be recovered by annealing of the yellow state. In this work, a polymorphism of the α-phase at room temperature was found: as-synthesized (αi), degraded (αδ) and thermally recovered (αrec). They differ in the Raman spectra and PL signal, but not in the XRD patterns. Using temperature-dependent Raman spectroscopy, we identified a structural change in the αi-polymorph at ca. 110 °C. Above 110 °C, the FAPbI3 structure has undoubtedly cubic Pm3[combining macron]m symmetry (high-temperature phase: αHT). Below that temperature, the αi-phase was suggested to have a distorted perovskite structure with Im3[combining macron] symmetry. Thermally recovered FAPbI3 (αrec) also demonstrated the structural transition to αHT at the same temperature (ca. 110 °C) during its heating. The understanding of hybrid perovskites may bring additional assets in the development of new and stable structures.

The Doping Mechanism of Halide Perovskite Unveiled by Alkaline Earth Metals.

Halide perovskites are a strong candidate for the next generation of photovoltaics. Chemical doping of halide perovskites is an established strategy to prepare the highest efficiency and most stable perovskite-based solar cells. In this study, we unveil the doping mechanism of halide perovskites using a series of alkaline earth metals. We find that low doping levels enable the incorporation of the dopant within the perovskite lattice, whereas high doping concentrations induce surface segregation. The threshold from low to high doping regime correlates to the size of the doping element. We show that the low doping regime results in a more n-type material, while the high doping regime induces a less n-type doping character. Our work provides a comprehensive picture of the unique doping mechanism of halide perovskites, which differs from classical semiconductors. We proved the effectiveness of the low doping regime for the first time, demonstrating highly efficient methylammonium lead iodide based solar cells in both n-i-p and p-i-n architectures.

Facile Bulk Synthesis of π-Cubic SnS.

The cubic modification of binary tin sulfide (SnS) has gained significant interest as an earth-abundant, low-toxicity solar absorber material with a band gap close to the optimal value for the conversion of sunlight. We herein report a simple synthesis for the metastable material, which will allow more elaborate characterization methods to be used on this material, and present a full powder refinement of the material along with some preliminary results on the optical and thermal stability properties.

Role of S and Se atoms on the microstructural properties of kesterite Cu2ZnSn(S(x)Se(1-x))4 thin film solar cells.

Microstructural properties of Cu2ZnSn(S(x)Se(1-x))4 kesterite solid solutions were investigated using grazing incidence X-ray diffraction for the full interval of anion compositions in order to explore the influence of S and Se atoms on the thin film morphology. Thin films were prepared by sputtering deposition of metallic precursors, which were then submitted to a high temperature sulfo-selenization process. By adjusting process parameters samples from sulfur- to selenium-pure (0 ≤ x ≤ 1) were made. Microstructural analysis shows a strong dependence of domain size and microstrain on composition. Both values increase with higher sulfur content, and depth profile analysis by grazing incidence X-ray diffraction shows selenium-rich films tend to have a more homogeneous depth distribution of domain size. The increasing trend in domain size of S-rich absorbers can be related to lower formation energies of the sulfur binary phases leading to formation of kesterites, while the increase in the microstrain is explained by the substitution of larger Se atoms with smaller S atoms in the host lattice and the presence of secondary phases.

BaZrS3 Chalcogenide Perovskite Thin Films by H2S Sulfurization of Oxide Precursors.

The earth-abundant ternary compound BaZrS3, which crystallizes in the perovskite-type structure, has come into view as a promising candidate for photovoltaic applications. We present the synthesis and characterization of polycrystalline perovskite-type BaZrS3 thin films. BaZrO3 precursor layers were deposited by pulsed laser deposition and sulfurized at various temperatures in an argon-diluted H2S atmosphere. We observe increasing incorporation of sulfur for higher annealing temperatures, accompanied by a red shift of the absorption edge, with a bandgap of Eg = 1.99 eV and a large absorption strength >105 cm-1 obtained for sulfurization temperatures of 1000 °C. X-ray diffraction analysis and SEM indicate enhanced crystallization at the higher annealing temperatures, but no evidence for a crystalline solid solution between the BaZrO3 and BaZrS3 phases is found. The charge carrier sum mobility estimated from optical-pump-terahertz-probe spectroscopy indicates increasing mobilities with increasing sulfurization temperature, reaching maximum values of up to ∼2 cm2 V-1 s-1.

The Role of Bulk and Interface Recombination in High-Efficiency Low-Dimensional Perovskite Solar Cells.

2D Ruddlesden-Popper perovskite (RPP) solar cells have excellent environmental stability. However, the power conversion efficiency (PCE) of RPP cells remains inferior to 3D perovskite-based cells. Herein, 2D (CH3 (CH2 )3 NH3 )2 (CH3 NH3 )n -1 Pbn I3 n +1 perovskite cells with different numbers of [PbI6 ]4- sheets (n = 2-4) are analyzed. Photoluminescence quantum yield (PLQY) measurements show that nonradiative open-circuit voltage (VOC ) losses outweigh radiative losses in materials with n > 2. The n = 3 and n = 4 films exhibit a higher PLQY than the standard 3D methylammonium lead iodide perovskite although this is accompanied by increased interfacial recombination at the top perovskite/C60 interface. This tradeoff results in a similar PLQY in all devices, including the n = 2 system where the perovskite bulk dominates the recombination properties of the cell. In most cases the quasi-Fermi level splitting matches the device VOC within 20 meV, which indicates minimal recombination losses at the metal contacts. The results show that poor charge transport rather than exciton dissociation is the primary reason for the reduction in fill factor of the RPP devices. Optimized n = 4 RPP solar cells had PCEs of 13% with significant potential for further improvements.