In Situ Local Band Engineering of Monolayer Graphene Using Triboelectric Plasma.

Graphene, a promising material with excellent properties, suffers from a major limitation in electronics due to its zero bandgap. The gas molecules adsorption has proven to be an effective approach for band regulation, which usually requires a harsh environment. Here, O2 - ions produced with triboelectric plasma are used for in situ regulation of graphene, and the switching ratio can reach 1010. The O2 - ions physical adsorption will reduce the Fermi-level (EF) of graphene. As the EF of graphene is lower than the lowest unoccupied molecular orbital (LUMO) level of O2-, the adsorption of O2 - changes from uniform physical adsorption to local chemical adsorption, thereby realizing the semiconductor properties of graphene. The local graphene bandgap is calculated to be 83.4 meV by the variable-temperature experiment. Furthermore, annealing treatment can restore to 1/10 of the initial conductance. The C─O bond formed by O2 - adsorption has low bond energy and is easy to desorb, while the C═O bond formed by adsorption on defects and edges has higher bond energy and is difficult to desorb. The study proposes a simple in situ method to investigate the microscopic process of O2 - adsorption on the graphene surface, demonstrating a new perspective for local energy band engineering of graphene.

Light and voltage dual-modulated volatile resistive switching in single ZnO nanowires.

A single ZnO nanowire device with volatile resistive switching behavior has been prepared. Different from traditional resistive switching devices, such ZnO nanowire devices do not exhibit resistive switching behaviors under a single bias voltage, and appear resistive switching behavior under the combined action of light stimuli and bias voltage. Through the demonstration of the time-dependent hysteresis curve and atmosphere-dependent hysteresis loop of the resistive switching devices, it is believed that under the resistive switching process, ultraviolet illumination can increase the carrier concentration and modulate the barrier depletion structure, and external bias voltage can ionize the surface state. They work together to modulate the switching process of the devices. Such light stimuli and bias voltage dual-modulated resistive switching device enables optical control and may thus be considered for sensory applications or optically tunable memories.

The water droplet with huge charge density excited by triboelectric nanogenerator for water sterilization.

Water is one of the most essential resources for the survival of human beings and all other living things. For the point of daily use, water sterilization has enormous social and economic significance, especially for remote and undeveloped areas. Here, we developed a self-powered water sterilization device, which consists of a rotating-disk freestanding triboelectric-layer mode triboelectric nanogenerator (RF-TENG), a voltage-multiplying circuit, and a water droplet control system. The output voltage of the RF-TENG is boosted by a voltage-multiplying circuit and then utilized to charge water droplet. When the rotation rate of the RF-TENG is 300 rpm, the output voltage of a six-fold voltage-multiplying circuit can reach 9319 V, and a 62.50µl water droplet can be positively charged to 6320 nC at the flow rate of 0.31 ml min-1. The charge density and electric filed of the water droplet can reach 101.12 nCµl-1and 11.28 kV cm-1, respectively. The charged water droplet can killE. coliandS. aureusquickly and efficiently through electroporation mechanism. With the advantages of low cost, simple in fabrication and usage, portability, and etc, the self-powered water sterilization device has wide application prospects in remote and undeveloped areas.

A robust all-inorganic hybrid energy harvester for synergistic energy collection from sunlight and raindrops.

As a new concept of the device, a hybrid energy harvester integrated with a water droplet triboelectric nanogenerator (WD-TENG) and a solar cell has been reported to convert raindrop energy and solar energy into electricity. However, organic triboelectric layers are usually utilized in previous studies that might be decomposed under long-term UV irradiation, resulting in degradation of the hybrid energy harvester. In this work, a fully inorganic hybrid energy harvester is demonstrated. Superhydrophobic SiO2 film is introduced to the system as both the triboelectric layer of the WD-TENG and the anti-reflective layer of the solar cell, which could increase the power conversion efficiency (PCE) of the solar cell from 15.17% to 15.71%. Meanwhile, WD-TENG with the SiO2 triboelectric layer could collect energies from rain droplets. This superhydrophobic SiO2 film could effectively reduce the dependence of the tilt angle for the WD-TENG and bring up self-cleaning performance for the hybrid energy harvester. Moreover, this fully inorganic architecture could enhance the stability of the hybrid energy harvester, making it a promising strategy in practical applications.

The recent progress of triboelectric nanogenerator-assisted photodetectors.

Since 2012, triboelectric nanogenerator (TENG) has attracted significant interest from researchers in the field of energy conversion due to its unique output characteristics of high voltage, pulse and low current. In addition, recent advancements have demonstrated that photodetection platforms based on TENG exhibit great advantages such as being simple, low-cost, portable, with high sensitivity, high response, etc, and are environment friendly. Here, this article provides a comprehensive review on the state-of-the-art photodetectors based on TENG in recent years, and a detailed introduction to the structural design and potential mechanisms. It mainly focuses on self-powered photodetectors (including photodetectors as a load resistance of a TENG and photosensitive materials such as tribo-layer of TENG) and the modulation of photodetectors based on TENG (including utilizing the voltage of TENG as well as triboelectric microplasma). Finally, we put forward some perspectives and outlook, including structure engineering and mechanism guidance, for the future development of simple, high-performance and portable photodetectors based on TENG.

Designing step-scheme AgI decorated Ta2O5-x heterojunctions for boosted photodegradation of organic pollutants.

Step-scheme (S-scheme) AgI decorated Ta2O5-x heterojunctions have been designed and synthesized via a combination of solvothermal and chemical deposition methods for enhanced visible-light harvesting and high-performance photocatalysis. The AgI nanoparticles showed great influences on the visible-light absorption and charge separation between AgI and Ta2O5-x microspheres. The experimental results indicated that the as-prepare AgI/Ta2O5-x composites achieved enhanced photocatalytic performance towards tetracycline degradation under visible light, and the AgI/Ta2O5-x-11 sample displayed the highest photocatalytic performance and the maximum rate constant of approximately 0.09483 min-1, which was 7.22 times that of Ta2O5-x microspheres and 2.56 times that of AgI, respectively. The highly enhanced photocatalytic performance was mainly attributed to the construction of S-scheme heterostructure and formation of oxygen vacancies in Ta2O5-x microspheres. In addition, the trapping experimental and DMPO spin-trapping ESR spectra confirmed the ⸱O2- and ⸱OH species as the main radicals during tetracycline degradation. Current work indicates an S-scheme tantalum-based composites for high-performance environmental photocatalysis.

In situ assembly of one-dimensional Pt@ZnO nanofibers driven by a ZIF-8 framework for achieving a high-performance acetone sensor.

To obtain a high-performance gas sensor, it is essential to ingeniously design sensing materials containing the features of high catalytic performance, abundant oxygen vacancies, and splendid grain dispersibility through a simple method. Inspired by the fact that ZIF-8 contains semiconductor metal atoms, well-arranged ZnO nanoparticle (NP)-in situ assembled one-dimensional nanofibers (NFs) are obtained by one-step electrospinning. By incorporating Pt NPs into the cavity of ZIF-8 NPs, well-dispersed Pt@ZnO NPs driven by Pt@ZIF-8 composites are obtained after annealing. The well-arranged Pt@ZnO NP-assembled NFs not only exhibit abundant oxygen vacancies but also avoid the self-aggregation of ZnO and Pt NPs. Meanwhile, the small Pt NPs could improve the catalytic effect in return. Therefore, the gas sensor fabricated based on the above materials exhibits an acetone sensitivity of 6.1 at 370 °C, compared with pristine ZnO NFs (1.6, 5 ppm). Moreover, the well-arranged Pt@ZnO NP-assembled NFs show exceptional sensitivity to acetone with a 70.2 ppb-level detection limit in theory. The synergistic advantages of the designed sensing material open up new possibilities for non-invasive disease diagnosis.

Active-ion-gated room temperature acetone gas sensing of ZnO nanowires array.

Reducing the high operation temperature of gas sensor to room temperature (RT) have attracted intense interests for its distinct preponderances, including energy-saving and super stability, which presents great prospects in commercial application. The exciting strategies for RT gas sensing, such as unique materials with activated surface or light activation, do not directly modulate the active ions for gas sensing, limiting the RT gas sensing performances. Here, an active-ion-gated strategy has been proposed for RT gas sensing with high performance and low power consumption, in which gas ions in triboelectric plasma are introduced into metal oxide semiconductor (MOS) film to act as both floating gate and active sensing ions. The active-ion-gated ZnO nanowires (NWs) array shows a sensitivity of 38.3% to 10 ppm acetone gas at RT, and the maximum power consumption is only 4.5 mW. At the same time, the gas sensor exhibits excellent selectivity to acetone. More importantly, the response (recovery) time of this sensor is as low as 11 s (25 s). It is found that OH-(H2O)4 ions in plasma are the key for realizing RT gas sensing ability, and an accompanied resistive switch is also observed. It is considered that the electron transfer between OH-(H2O)4 and ZnO NWs will forms a hydroxyl-like intermediate state (OH*) on the top of Zn2+, leading to the band bending of ZnO and activating the reactive O2 - ions on the oxygen vacancies. The active-ion-gated strategy proposed here present a novel exploration to achieving RT gas sensing performance of MOS by activating sensing properties at the scale of ions or atoms.

The Regulation of O2 Spin State and Direct Oxidation of CO at Room Temperature Using Triboelectric Plasma by Harvesting Mechanical Energy.

Oxidation reactions play a critical role in processes involving energy utilization, chemical conversion, and pollutant elimination. However, due to its spin-forbidden nature, the reaction of molecular dioxygen (O2) with a substrate is difficult under mild conditions. Herein, we describe a system that activates O2 via the direct modulation of its spin state by mechanical energy-induced triboelectric corona plasma, enabling the CO oxidation reaction under normal temperature and pressure. Under optimized reaction conditions, the activity was 7.2 µmol h-1, and the energy consumption per mole CO was 4.2 MJ. The results of kinetic isotope effect, colorimetry, and density functional theory calculation studies demonstrated that electrons generated in the triboelectric plasma were directly injected into the antibonding orbital of O2 to form highly reactive negative ions O2-, which effectively promoted the rate-limiting step of O2 dissociation. The barrier of the reaction of O2- ions and CO molecular was 3.4 eV lower than that of O2 and CO molecular. This work provides an effective strategy for using renewable and green mechanical energy to realize spin-forbidden reactions of small molecules.

Enhanced NO2 gas sensing of a single-layer MoS2 by photogating and piezo-phototronic effects.

NO2 sensors with ultrahigh sensitivity are demanded for future electronic sensing systems. However, traditional sensors are considerably limited by the relative low sensitivity, high cost and complicated process. Here, we report a simply and reliable flexible NO2 sensor based on single-layer MoS2. The flexible sensor exhibits high sensitivity to NO2 gas due to ultra-large specific surface area and the nature of two-dimensional (2D) semiconductor. When the NO2 is 400 ppb (parts per billion), compared with the dark and strain-free conditions, the sensitivity of the single-layer sensor is enhanced to 671% with a 625 nm red light-emitting diode (LED) illumination of 4 mW/cm2 power under 0.67% tensile strain. More important, the response time is dramatically reduced to ∼16 s and it only needs ∼65 s to complete 90% recovery. A theoretical model is proposed to discuss the microscopic mechanisms. We find that the remarkable sensing characteristics are the result of coupling among piezoelectricity, photoelectricity and adsorption-desorption induced charges transfer in the single-layer MoS2 Schottky junction based device. Our work opens up the way to further enhancements in the sensitivity of gas sensor based on single-layer MoS2 by introducing photogating and piezo-phototronic effects in mesoscopic systems.

Piezotronic Effect Enhanced Flexible Humidity Sensing of Monolayer MoS2.

We report the piezotronic effect on the performance of humidity detection based on a back-to-back Schottky contacted monolayer MoS2 device. By introducing an upswept mechanical strain, the in-plane electrical polarization can be induced at the MoS2/metal junction region. The polarization charges can modify the Schottky barrier height at the interface of MoS2/metal junction, subsequently improving the sensitivity of the humidity sensing. An energy band diagram is proposed to explain the experiment phenomenon of the humidity sensor. This work provides a simple way to enhance the sensitivity of ultrathin two-dimensional-materials-based sensors by the piezotronic effect, which has great potential applications in electronic skin, human-computer interfacing, gas sensing, and environment monitoring.

Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature.

Utilizing magnetic field directly modulating/turning the charge carrier transport behavior of field-effect transistor (FET) at ambient conditions is an enormous challenge in the field of micro-nanoelectronics. Here, a new type of magnetic-induced-piezopotential gated field-effect-transistor (MIPG-FET) base on laminate composites is proposed, which consists of Terfenol-D, a ferroelectric single crystal (PMNPT), and MoS2 flake. When applying an external magnetic field to the MIPG-FET, the piezopotential of PMNPT triggered by magnetostriction of the Terfenol-D can serve as the gate voltage to effectively modulate/control the carrier transport process and the corresponding drain current at room temperature. Considering the two polarization states of PMNPT, the drain current is diminished from 9.56 to 2.9 µA in the Pup state under a magnetic field of 33 mT, and increases from 1.41 to 4.93 µA in the Pdown state under a magnetic field of 42 mT and at a drain voltage of 3 V. The current on/off ratios in these states are 330% and 432%, respectively. This work provides a novel noncontact coupling method among magnetism, piezoelectricity, and semiconductor properties, which may have extremely important applications in magnetic sensors, memory and logic devices, micro-electromechanical systems, and human-machine interfacing.