Excited-state intramolecular proton transfer in the kinetic-control regime.

A new series of molecules bearing a 2,11-dihydro-1H-cyclopenta[de]indeno[1,2-b]quinoline (CPIQ) chromophore with the N-HN type of intramolecular hydrogen bond are strategically designed and synthesized, among which CPIQ-OH, CPIQ-NHAc and CPIQ-NHTs in solution exhibit a single emission band with an anomalously large Stokes shift, whereas CPIQ-NH2 and CPIQ-NHMe show apparent dual-emission property. This, in combination with time-resolved spectroscopy and the computational approach, leads us to conclude that CPIQ-OH, CPIQ-NHAc and CPIQ-NHTs undergo ultrafast, highly exergonic excited-state intramolecular proton transfer (ESIPT), while a finite rate of ESIPT is observed for CPIQ-NH2 and CPIQ-NHMe with a time constant of 117 ps and 39 ps, respectively, in acetonitrile at room-temperature. Further temperature-dependent studies deduce an appreciable ESIPT barrier for CPIQ-NH2 and CPIQ-NHMe. Different from most of the barrier associated ESIPT molecules that are commonly in the thermodynamic-control regime, i.e. found in the thermal pre-equilibrium between excited normal and proton-transfer tautomer states, CPIQ-NH2 and CPIQ-NHMe cases are in the kinetic-control regime where ESIPT is irreversible with a significant barrier. The barrier is able to be tuned by the electronic properties of the -R group in the NR-H proton donor site, resulting in ratiometric fluorescence for normal versus tautomer emission.

Sulfur-Based Intramolecular Hydrogen-Bond: Excited-State Hydrogen-Bond On/Off Switch with Dual Room-Temperature Phosphorescence.

We report O-H----S hydrogen-bond (H-bond) formation and its excited-state intramolecular H-bond on/off reaction unveiled by room-temperature phosphorescence (RTP). In this seminal work, this phenomenon is demonstrated with 7-hydroxy-2,2-dimethyl-2,3-dihydro-1 H-indene-1-thione (DM-7HIT), which possesses a strong polar (hydroxy)-dispersive (thione) type H-bond. Upon excitation, DM-7HIT exhibits anomalous dual RTP with maxima at 550 and 685 nm. This study found that the lowest lying excited state (S1) of DM-7HIT is a sulfur nonbonding (n) to π* transition, which undergoes O-H bond flipping from S1(nπ*) to the non-H-bonded S'1(nπ*) state, followed by intersystem crossing and internal conversion to populate the T'1(nπ*) state. Fast H-bond on/off switching then takes place between T'1(nπ*) and T1(nπ*), forming a pre-equilibrium that affords both the T'1(nπ*, 685 nm) and T1(nπ*, 550 nm) RTP. The generality of the sulfur H-bond on/off switching mechanism, dubbed a molecule wiper, was rigorously evaluated with a variety of other H-bonded thiones, and these results open a new chapter in the chemistry of hydrogen bonds.

Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.