Radical-Induced Cascade Annulation/Hydrocarbonylation for Construction of 2-Aryl-4H-chromen-4-ones.

A robust metal- and solvent-free cascade radical-induced C-N cleavage/intramolecular 6-endo-dig annulation/hydrocarbonylation for the synthesis of the valuable 2-aryl-4H-chromen-4-ones is described. This practical synthesis strategy utilizes propargylamines and air as the oxygen source and green carbonylation reagent, in which propargylamines are activated by the inexpensive and available dimethyl 2,2'-azobis(2-methylpropionate) (AIBME) and (PhSe)2 as the radical initiators. This simple and green protocol features wide substrate adaptability, good functional group tolerance, and amenability to scaling up and derivatizations.

Dual-Mode Plasmonic Coupling-Enhanced Color Conversion of Inorganic CsPbBr3 Perovskite Quantum Dot Films.

Plasmonic coupling has been demonstrated to be an effective manipulation strategy for emission enhancement in low-dimensional semiconductor materials. Here, dual-mode plasmonic resonances based on a metal dimer structure were proposed to simultaneously enhance the absorption under short-wavelength excitation and excitons' emission at longer wavelengths for CsPbBr3 perovskite quantum dots (QDs). Large-area metal nanodimer arrays with well-controlled local surface plasmon resonance were facilely fabricated by a simple method combined with metal angular deposition and nanosphere lithography. With the addition of an optimized polymethyl methacrylate spacer, the effective plasmonic coupling and interfacial passivation of QDs were successfully achieved in the hybrid system. As a result, the QD films exhibited a significant and approximately 3.95-fold overall fluorescence enhancement when using blue light excitation, showing the novel advantages of dual-mode plasmonic coupling of semiconductor quantum structures for color conversion applications.

Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors.

Here, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of -10 V, a 3.96-A W-1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W-1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.