Resonance and localization effects at a dipolar organic semiconductor interface.

The image state manifold of the dipolar organic semiconductor vanadyl naphthalocyanine (VONc) on highly oriented pyrolytic graphite is investigated by angle-resolved two-photon photoemission (AR-TPPE) spectroscopy in the 0-1 monolayer regimes. Interfacial charge-transfer from the image potential state of clean graphite populates a near-resonant VONc anion level, identifiable by the graphite image potential state by its distinct momentum dispersion obtained from AR-TPPE. This affinity level is subject to depolarization by the neighboring molecules, resulting in stabilization of this state with coverage. Near a coverage of one monolayer, a hybrid image potential/anion state is also formed, showing progressive localization with coverage. Intensities for all these features develop rather differently with molecular coverage, pointing towards the different types of charge-transfer interactions at play at this interface.

Crystallization in one-step solution deposition of perovskite films: Upward or downward?

Despite the fast progress of perovskite photovoltaic performances, understanding the crystallization and growth of perovskite films is still lagging. One unanswered fundamental question is whether the perovskite films are grown from top (air side) to bottom (substrate side) or from bottom to top despite 10 years of development. Here, by using grazing incidence x-ray diffraction and morphology characterizations, we unveil that the perovskite films prepared by one-step solution processes, including antisolvent-assisted spin coating and blade coating, follow the downward growth from intermediate phase during thermal annealing. Such a top-to-bottom downward growth is initialized by the evaporation of residual solvent from the top surface of "wet" films and is less sensitive to perovskite compositions and the wettability of underlying substrates. Addressing this fundamental question is important to understand the heterogeneity of perovskite films along the vertical direction, which markedly affects the efficiency and stability of perovskite solar cells.

Hybridization-Induced Carrier Localization at the C60 /ZnO Interface.

Electronic coupling and ground-state charge transfer at the C60 /ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

Spectroscopy and control of near-surface defects in conductive thin film ZnO.

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface.

Despite significant interest in hybrid organic/inorganic semiconductor interfaces, little is known regarding the fate of charge carriers at metal oxide interfaces, particularly on ultrafast time scales. Using core-hole clock spectroscopy, we investigate the ultrafast charge carrier dynamics of conductive ZnO films at a hybrid interface with an organic semiconductor. The adsorption of C60 on the ZnO surface strongly suppresses the ultrafast carrier delocalization and increases the charge carrier residence time from 400 attoseconds to nearly 30 fs. Here, we show that a new hybridized interfacial density of states with substantial molecular character is formed, fundamentally altering the observed carrier dynamics. The remarkable change in the dynamics sheds light on the fate of carriers at hybrid organic/inorganic semiconductor interfaces relevant to organic optoelectronics and provides for the first time an atomistic picture of the electronically perturbed near-interface region of a metal oxide.