Highly Reliable Flexible Device with a Charge Compensation Layer.

Flexible devices fabricated with a polyimide (PI) substrate are essential for foldable, rollable, and stretchable products and various applications. However, inherent technical challenges remain in mobile charge-induced device instabilities and image retention, significantly hindering future technologies. Here, we introduce a new barrier material, SiCOH, into the backplane of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) and applied it to production-level flexible panels. We found that the SiCOH layer effectively compensates for the surface charging induced by fluorine ions at the interface between the PI substrate and the barrier layer under bias stress, thereby preventing abnormal positive shifts in threshold voltage (Vth) and image disturbance. The a-IGZO TFTs and metal-insulator-metal and metal-insulator-semiconductor capacitors with a SiCOH layer demonstrate reliable device performance, Vth shifts, and capacitance changes with an increase in gate bias stress. A flexible device with SiCOH enables the suppression of abnormal Vth shifts associated with PIs and plays a vital role in image sticking. This work provides new insights into process integrity and paves the way for expediting versatile form factors.

Effects of polyimide curing on image sticking behaviors of flexible displays.

Flexible displays on a polyimide (PI) substrate are widely regarded as a promising next-generation display technology due to their versatility in various applications. Among other bendable materials used as display panel substrates, PI is especially suitable for flexible displays for its high glass transition temperature and low coefficient of thermal expansion. PI cured under various temperatures (260 °C, 360 °C, and 460 °C) was implemented in metal-insulator-metal (MIM) capacitors, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFT), and actual display panels to analyze device stability and panel product characteristics. Through electrical analysis of the MIM capacitor, it was confirmed that the charging effect in the PI substrates intensified as the PI curing temperature increased. The threshold voltage shift (ΔVth) of the samples was found to increase with rising curing temperature under negative bias temperature stress (NBTS) due to the charging effect. Our analyses also show that increasing ΔVth exacerbates the image sticking phenomenon observed in display panels. These findings ultimately present a direct correlation between the curing temperature of polyimide substrates and the panel image sticking phenomenon, which could provide an insight into the improvement of future PI-substrate-based displays.