Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition.

We have recently reported a new method for the electrodeposition of thin film and nanostructured phase change memory (PCM) devices from a single, highly tuneable, non-aqueous electrolyte. The quality of the material was confirmed by phase cycling via electrical pulsed switching of both 100 nm nano-cells and thin film devices. This method potentially allows deposition into extremely small confined cells down to less than 5 nm, 3D lay-outs that require non-line-of-sight techniques, and seamless integration of selector devices. As electrodeposition requires a conducting substrate, the key condition for electronic applications based on this method is the use of patterned metal lines as the working electrode during the electrodeposition process. In this paper, we show the design and fabrication of a 2D passive memory matrix in which the word lines act as the working electrode and nucleation site for the growth of confined cells of Ge-Sb-Te. We will discuss the precursor requirement for deposition from non-aqueous, weakly coordinating solvents, show the transmission electron microscopy analysis of the electrodeposition growth process and elemental distribution in the deposits, and show the fabrication and characterisation of the Ge-Sb-Te memory matrix.

Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy.

We report on the fabrication of memory devices based on a nanoporous GeSbTe layer electrodeposited inbetween TiN and Ag electrodes. It is shown that devices can operate along two distinct electrical modes consisting of a volatile or a non-volatile resistance switching mode upon appropriate preconditioning procedures. Based on electrical measurements conducted in both switching modes and physical analysis performed on a device after electrical stress, resistance switching is attributed to the formation/dissolution of a conductive filament from the Ag electrode into the GST layer whereas the volatile/non-volatile resistance switching is attributed to the presence of an interface layer between the GST and the Ag top electrode. Due to their simple, low-cost and low-temperature fabrication procedure, these devices could be advantageously exploited in flexible electronic applications or embedded into the back-end of line CMOS technology.

Electrochemical charge transfer mediated by metal nanoparticles and quantum dots.

Electron transfer processes mediated by nanostructured materials assembled at electrode surfaces underpin fundamental processes in novel electrochemical sensors, light energy conversion systems and molecular electronics. Functionalisation of electrode surfaces with hierarchical architectures incorporating self-assembling molecular systems and materials, such as metal nanostructures, quantum dots, carbon nanotubes, graphene or biomolecules have been intensively studied over the last 20 years. Important steps have been made towards the rationalisation of the charge transfer dynamics from redox species in solution across molecular self-assembling systems to electrode surfaces. For instance, a unified picture has emerged describing the factors which determine the rate constant for electron transfer processes across rigid self-assembling molecular barriers. An increasing bulk of evidence has recently shown that the incorporation of nanomaterials into self-assembling monolayers leads to an entirely different electrochemical behaviour. This perspective rationalises some of the key observations associated with nanoparticle mediated charge transfer, such as the apparent distance independent charge transfer resistance observed for redox species in solution. This behaviour only manifests itself clearly in the case where the probability of direct charge transfer from the redox probe to the electrode is strongly attenuated by self-assembling molecular barriers. Here we will highlight specific issues concerning self-assembled monolayers as blocking barriers prior to discussing the effect of nanoparticles on the electrochemical response of the system. Selected examples will provide conclusive evidence that the extent of charge transfer mediation is determined by the overlap between the density of states of the nanostructures and the energy levels of redox species in solution. Only in the case where a strong overlap exists between the energy levels of the two components, the nanostructures behave as "electron launchers", allowing efficient charge transfer across insulating molecular layers.

Tuning electrochemical rectification via quantum dot assemblies.

A novel approach to tuning electrochemical rectification using 2D assemblies of quantum dots (QDs) is presented. Asymmetric enhancement of the oxidation and reduction currents in the presence of the Fe(CN)(6)(3-/4-) redox couple is observed upon adsorption of QDs at thiol-modified Au electrodes. The extent of the electrochemical rectification is dependent on the average QD size. A molecular blocking layer is generated by self-assembling 11-mercaptoundecanoic acid (MUA) and an ultrathin film of poly(diallyldimethylammonium chloride) (PDADMAC) on the electrode. The polycationic film allows the electrostatic adsorption of 3-mercaptopropionic acid (MPA)-stabilized CdTe QDs, generating 2D assemblies with approximately 0.4% coverage. The QD adsorption activates a fast charge transfer across the blocking layer in which the reduction process is more strongly enhanced than the oxidation reaction. The partial electrochemical rectification is rationalized in terms of the relative position of the valence (VB) and conduction band (CB) edges with respect to the redox Fermi energy (ε(redox)). Quantitative analysis of the exchange current density obtained from electrochemical impedance spectroscopy demonstrates that the enhancement of charge transport across the molecular barrier is strongly dependent on the position of the QD valence band edge relative to ε(redox). The average electron tunneling rate constant through the QD assemblies is estimated on the basis of the Gerischer model for electron transfer.

Electrochemical hole injection into the valence band of thiol stabilised CdTe quantum dots.

The electrochemical injection of holes into the valence band of mercaptopropionic acid stabilised CdTe quantum dots in aqueous solution was investigated employing a glassy carbon rotating disc electrode. Analysis of the first exciton peak and the electrochemical responses as a function of the particle size was performed within the framework of the effective mass approximation and tight-binding models. It is demonstrated that the energy of the quantum dot band edges can be predicted from capacitance data of bulk semiconductor electrodes modified by the same stabilising groups as on the dots. In this paper we show that the thiol binding shifts the band edges of the CdTe particles by approximately 0.7 eV with respect to the theoretical value in the absence of stabilising groups. The results also revealed a significant dependence of the hole-injection rate on the electrochemical potential.

Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film.

We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.