RESUMO
Solution synthesis of MoS2precursor followed by direct printing could be an effective way to make printed electronic devices. A linear MoS2pattern was obtained by an electrohydrodynamic (EHD)-jet printer with a sol-gel system without chemical vapor deposition. The morphology of the MoS2after a transfer process was maintained without wrinkles or cracking, resulting in a smooth surface compared with that of spin-coated films. EHD-jet printed MoS2was transferred onto high-kdielectric Al2O3and used as a semiconductor layer in thin film transistor (TFT) devices. The printed MoS2TFT has relatively good electrical characteristics, such as a linear field effect mobility, current ratio, and low subthreshold swing of 47.64 ± 2.99 cm2V-1s-1, 7.39 ± 0.12 × 106, and 0.7 ± 0.05 V decade-1, respectively. This technique may have promise for future applications.