Detalhe da pesquisa
1.
Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO2 at CF4/H2/Ar Plasma.
Nanomaterials (Basel)
; 14(2)2024 Jan 17.
Artigo
Inglês
| MEDLINE | ID: mdl-38251172
2.
Measurement of re-entry plasma density using microwave reflectometer in laboratory.
Rev Sci Instrum
; 93(10): 103521, 2022 Oct 01.
Artigo
Inglês
| MEDLINE | ID: mdl-36319369
3.
Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer.
Materials (Basel)
; 14(11)2021 Jun 02.
Artigo
Inglês
| MEDLINE | ID: mdl-34199585