Emerging Atomistic Modeling Methods for Heterogeneous Electrocatalysis.

Heterogeneous electrocatalysis lies at the center of various technologies that could help enable a sustainable future. However, its complexity makes it challenging to accurately and efficiently model at an atomic level. Here, we review emerging atomistic methods to simulate the electrocatalytic interface with special attention devoted to the components/effects that have been challenging to model, such as solvation, electrolyte ions, electrode potential, reaction kinetics, and pH. Additionally, we review relevant computational spectroscopy methods. Then, we showcase several examples of applying these methods to understand and design catalysts relevant to green hydrogen. We also offer experimental views on how to bridge the gap between theory and experiments. Finally, we provide some perspectives on opportunities to advance the field.

Facet-Defined Dilute Metal Alloy Nanorods for Efficient Electroreduction of CO2 to n-Propanol.

Electroreduction of CO2 into liquid fuels is a compelling strategy for storing intermittent renewable energy. Here, we introduce a family of facet-defined dilute copper alloy nanocrystals as catalysts to improve the electrosynthesis of n-propanol from CO2 and H2O. We show that substituting a dilute amount of weak-CO-binding metals into the Cu(100) surface improves CO2-to-n-propanol activity and selectivity by modifying the electronic structure of catalysts to facilitate C1-C2 coupling while preserving the (100)-like 4-fold Cu ensembles which favor C1-C1 coupling. With the Au0.02Cu0.98 champion catalyst, we achieve an n-propanol Faradaic efficiency of 18.2 ± 0.3% at a low potential of -0.41 V versus the reversible hydrogen electrode and a peak production rate of 16.6 mA·cm-2. This study demonstrates that shape-controlled dilute-metal-alloy nanocrystals represent a new frontier in electrocatalyst design, and precise control of the host and minority metal distributions is crucial for elucidating structure-composition-property relationships and attaining superior catalytic performance.

Atomistic Understanding of Two-dimensional Electrocatalysts from First Principles.

Two-dimensional electrocatalysts have attracted great interest in recent years for renewable energy applications. However, the atomistic mechanisms are still under debate. Here we review the first-principles studies of the atomistic mechanisms of common 2D electrocatalysts. We first introduce the first-principles models for studying heterogeneous electrocatalysis then discuss the common 2D electrocatalysts with a focus on N doped graphene, single metal atoms in graphene, and transition metal dichalcogenides. The reactions include hydrogen evolution, oxygen evolution, oxygen reduction, and carbon dioxide reduction. Finally, we discuss the challenges and the future directions to improve the fundamental understanding of the 2D electrocatalyst at atomic level.

Solution-processable 2D semiconductors for high-performance large-area electronics.

Two-dimensional (2D) materials, consisting of atomically thin crystal layers bound by the van der Waals force, have attracted much interest because of their potential in diverse technologies, including electronics, optoelectronics and catalysis1-10. In particular, solution-processable 2D semiconductor (such as MoS2) nanosheets are attractive building blocks for large-area thin-film electronics. In contrast to conventional zero- and one-dimensional nanostructures (quantum dots and nanowires, respectively), which are typically plagued by surface dangling bonds and associated trapping states, 2D nanosheets have dangling-bond-free surfaces. Thin films created by stacking multiple nanosheets have atomically clean van der Waals interfaces and thus promise excellent charge transport11-15. However, preparing high-quality solution-processable 2D semiconductor nanosheets remains a challenge. For example, MoS2 nanosheets and thin films produced using lithium intercalation and exfoliation are plagued by the presence of the metallic 1T phase and poor electrical performance (mobilities of about 0.3 square centimetres per volt per second and on/off ratios of less than 10)2,12, and materials produced by liquid exfoliation exhibit an intrinsically broad thickness distribution, which leads to poor film quality and unsatisfactory thin-film electrical performance (mobilities of about 0.4 square centimetres per volt per second and on/off ratios of about 100)14,16,17. Here we report a general approach to preparing highly uniform, solution-processable, phase-pure semiconducting nanosheets, which involves the electrochemical intercalation of quaternary ammonium molecules (such as tetraheptylammonium bromide) into 2D crystals, followed by a mild sonication and exfoliation process. By precisely controlling the intercalation chemistry, we obtained phase-pure, semiconducting 2H-MoS2 nanosheets with a narrow thickness distribution. These nanosheets were then further processed into high-performance thin-film transistors, with room-temperature mobilities of about 10 square centimetres per volt per second and on/off ratios of 106 that greatly exceed those obtained for previous solution-processed MoS2 thin-film transistors. The scalable fabrication of large-area arrays of thin-film transistors enabled the construction of functional logic gates and computational circuits, including an inverter, NAND, NOR, AND and XOR gates, and a logic half-adder. We also applied our approach to other 2D materials, including WSe2, Bi2Se3, NbSe2, In2Se3, Sb2Te3 and black phosphorus, demonstrating its potential for generating versatile solution-processable 2D materials.

Monolayer atomic crystal molecular superlattices.

Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 107, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

Ligand-Controlled Electroreduction of CO2 to Formate over Facet-Defined Bimetallic Sulfide Nanoplates.

CO2 reduction (CO2R) catalyzed by an efficient, stable, and earth-abundant electrocatalyst offers an attractive means to store energy derived from renewable sources. Here, we describe the synthesis of facet-defined Cu2SnS3 nanoplates and the ligand-controlled CO2R property. We show that thiocyanate-capped Cu2SnS3 nanoplates possess excellent selectivity toward formate over a wide range of potentials and current densities, attaining a maximum formate Faradaic efficiency of 92% and partial current densities as high as 181 mA cm-2 when tested using a flow cell with gas-diffusion electrode. In situ spectroscopic measurements and theoretical calculations reveal that the high formate selectivity originates from favorable adsorption of HCOO* intermediates on cationic Sn sites that are electronically modulated by thiocyanates bound to adjacent Cu sites. Our work illustrates that well-defined multimetallic sulfide nanocrystals with tailored surface chemistries could provide a new avenue for future CO2R electrocatalyst design.

What Is the Rate-Limiting Step of Oxygen Reduction Reaction on Fe-N-C Catalysts?

Oxygen reduction reaction (ORR) is essential to various renewable energy technologies. An important catalyst for ORR is single iron atoms embedded in nitrogen-doped graphene (Fe-N-C). However, the rate-limiting step of the ORR on Fe-N-C is unknown, significantly impeding understanding and improvement. Here, we report the activation energies of all of the steps, calculated by ab initio molecular dynamics simulations under constant electrode potential. In contrast to the common belief that a hydrogenation step limits the reaction rate, we find that the rate-limiting step is oxygen molecule replacing adsorbed water on Fe. This occurs through concerted motion of H2O desorption and O2 adsorption, without leaving the site bare. Interestingly, despite being an apparent "thermal" process that is often considered to be potential-independent, the barrier reduces with the electrode potential. This can be explained by stronger Fe-O2 binding and weaker Fe-H2O binding at a lower potential, due to O2 gaining electrons and H2O donating electrons to the catalyst. Our study offers new insights into the ORR on Fe-N-C and highlights the importance of kinetic studies in heterogeneous electrochemistry.

Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature.

Two-dimensional semiconductors have demonstrated great potential for next-generation electronics and optoelectronics, however, the current 2D semiconductors suffer from intrinsically low carrier mobility at room temperature, which significantly limits their applications. Here we discover a variety of new 2D semiconductors with mobility 1 order of magnitude higher than the current ones and even higher than bulk silicon. The discovery was made by developing effective descriptors for computational screening of the 2D materials database, followed by high-throughput accurate calculation of the mobility using a state-of-the-art first-principles method that includes quadrupole scattering. The exceptional mobilities are explained by several basic physical features; particularly, we find a new feature: carrier-lattice distance, which is easy to calculate and correlates well with mobility. Our Letter opens up new materials for high performance device performance and/or exotic physics, and improves the understanding of the carrier transport mechanism.

Atomic-Level Dynamics of Point Vacancies and the Induced Stretched Defects in 2D Monolayer PtSe2.

Monolayer PtSe2 holds great potential in extending 2D devices functionality, but their atomic-level-defect study is still limited. Here, we investigate the atomic structures of lattice imperfections from point to stretched 1D defects in 1T-PtSe2 monolayers, using annular dark-field scanning transmission electron microscopy (ADF-STEM). We show Se vacancies (VSe) have preferential sites with high beam-induced mobility. Diverse divacancies form with paired VSe. We found stretched linear defects triggered by dynamics of VSe that altered strain fields, distinct from the line vacancies in 2H-phase 2D materials. The paired VSe stability and formation possibility of vacancy lines are evaluated by density functional theory. Lower sputtering energy in PtSe2 than that in MoS2 can cause larger possibility of atomic loss compared to diffusion required for creating VSe lines. This provides atomic insights into the defects in 1T-PtSe2 and shows how a deviated 1D structure is embedded in a 2D system without losing atom lines.

Dynamic Stability of Copper Single-Atom Catalysts under Working Conditions.

The long-term stability of single-atom catalysts is a major factor affecting their large-scale commercial application. How to evaluate the dynamic stability of single-atom catalysts under working conditions is still lacking. Here, taking a single copper atom embedded in N-doped graphene as an example, the "constant-potential hybrid-solvation dynamic model" is used to evaluate the reversible transformation between copper single atoms and clusters under realistic reaction conditions. It is revealed that the adsorption of H is a vital driving force for the leaching of the Cu single atom from the catalyst surface. The more negative the electrode potential, the stronger the adsorption of H. As a result, the competitive hydrogen evolution reaction is inhibited, and Cu-N bonds are weakened, resulting in some Cu atoms being tethered on the catalyst surface and some being dissolved in the aqueous solution. The collision of the Cu atoms in the two states forms a transient Cu cluster structure as a true catalytic active site to promote CO2 reduction to ethanol. As the applied potential is released or switched to a positive value, hydroxyl radicals (OH•) play a dominant role in the oxidation process of the Cu cluster, and then Cu returns to the initial atomic dispersion state by redeposition, completing the reconstruction cycle of the copper catalyst. Our work provides a fundamental understanding of the dynamic stability of Cu single-atom catalysts under working conditions at the atomic level and calls for a reassessment of the stability of currently reported single-atom catalysts considering realistic reaction conditions.

High-performance all-solid-state batteries enabled by salt bonding to perovskite in poly(ethylene oxide).

Flexible and low-cost poly(ethylene oxide) (PEO)-based electrolytes are promising for all-solid-state Li-metal batteries because of their compatibility with a metallic lithium anode. However, the low room-temperature Li-ion conductivity of PEO solid electrolytes and severe lithium-dendrite growth limit their application in high-energy Li-metal batteries. Here we prepared a PEO/perovskite Li3/8Sr7/16Ta3/4Zr1/4O3 composite electrolyte with a Li-ion conductivity of 5.4 × 10-5 and 3.5 × 10-4 S cm-1 at 25 and 45 °C, respectively; the strong interaction between the F- of TFSI- (bis-trifluoromethanesulfonimide) and the surface Ta5+ of the perovskite improves the Li-ion transport at the PEO/perovskite interface. A symmetric Li/composite electrolyte/Li cell shows an excellent cyclability at a high current density up to 0.6 mA cm-2 A solid electrolyte interphase layer formed in situ between the metallic lithium anode and the composite electrolyte suppresses lithium-dendrite formation and growth. All-solid-state Li|LiFePO4 and high-voltage Li|LiNi0.8Mn0.1Co0.1O2 batteries with the composite electrolyte have an impressive performance with high Coulombic efficiencies, small overpotentials, and good cycling stability.

Polycrystalline Few-Layer Graphene as a Durable Anticorrosion Film for Copper.

Corrosion of metals in atmospheric environments is a worldwide problem in industry and daily life. Traditional anticorrosion methods including sacrificial anodes or protective coatings have performance limitations. Here, we report atomically thin, polycrystalline few-layer graphene (FLG) grown by chemical vapor deposition as a long-term protective coating film for copper (Cu). A six-year old, FLG-protected Cu is visually shiny and detailed material characterizations capture no sign of oxidation. The success of the durable anticorrosion film depends on the misalignment of grain boundaries between adjacent graphene layers. Theoretical calculations further found that corrosive molecules always encounter extremely high energy barrier when diffusing through the FLG layers. Therefore, the FLG is able to prevent the corrosive molecules from reaching the underlying Cu surface. This work highlights the interesting structures of polycrystalline FLG and sheds insight into the atomically thin coatings for various applications.

Origin of Selective Production of Hydrogen Peroxide by Electrochemical Oxygen Reduction.

Oxygen reduction reaction (ORR) is one of the most important electrochemical reactions. Starting from a common reaction intermediate *-O-OH, the ORR splits into two pathways, either producing hydrogen peroxide (H2O2) by breaking the *-O bond or leading to water formation by breaking the O-OH bond. However, it is puzzling why many catalysts, despite the strong thermodynamic preference for the O-OH breaking, exhibit high selectivity for hydrogen peroxide. Moreover, the selectivity is dependent on the potential and pH, which remain not understood. Here we develop an advanced first-principles model for effective calculation of the electrochemical reaction kinetics at the solid-water interface, which were not accessible by conventional models. Using this model to study representative catalysts for H2O2 production, we find that breaking the O-OH bond can have a higher energy barrier than breaking *-O, due to the rigidity of the O-OH bond. Importantly, we reveal that the selectivity dependence on potential and pH is rooted into the proton affinity to the former/later O in *-O-OH. For single cobalt atom catalyst, decreasing potential promotes proton adsorption to the former O, thereby increasing the H2O2 selectivity. In contrast, for the carbon catalyst, the proton prefers the latter O, resulting in a lower H2O2 selectivity in acid condition. These findings explain the experiments and highlight the kinetic origins of the selectivity. Our work improves the understanding of ORR by uncovering the proton affinity as a new factor and provides a new model to effectively simulate the atomic-level kinetics of heterogeneous electrochemistry.

Stable Low-Dimensional Boron Chalcogenides from Planar Structural Motifs.

There has been growing interest in searching for new low-dimensional (low-D) materials for nanoelectronics and energy applications. Most materials have their structural units extended in three dimensions and connected with chemical bonds. When the dimension is reduced, these bonds will be broken, decreasing the stability and making their experimental realization difficult. Here, we show that stable low-D materials can be made from naturally existing planar structural units. This is demonstrated by first-principles study of boron chalcogenides (B-X), which can have various low-D structures with attractive properties. For example, B2O3 can be the thinnest proton-exchange membrane for fuel cells. B-X are wide-gap semiconductors that can complement the narrow-gap 2D metal dichalcogenides for (opto)electronics. Our work sheds light on the stability of low-D materials and suggests guidelines for rational design of new materials.

Unveiling the Active Structure of Single Nickel Atom Catalysis: Critical Roles of Charge Capacity and Hydrogen Bonding.

A single nickel atom embedded in graphene is one of the most representative single-atom catalysts, and it has a high activity and selectivity for electrochemical CO2 reduction (CO2R) to CO. However, the catalytic origin, especially the coordination structure of Ni, remains highly puzzling, as previous density functional theory (DFT) calculations showed that all the possible structures should be inactive and/or nonselective. Here, using ab initio molecular dynamics (AIMD) and a "slow-growth" sampling approach to evaluate the reaction kinetic barriers, we show that the charge capacity (of the site) and hydrogen bonding (with the intermediates), which were neglected/oversimplified in previous DFT calculations, play crucial roles, and including their effects can resolve the catalytic origin. Particularly, a high charge capacity allows the catalytic site to carry more charges than required for the electrochemical step, lowering the electrochemical barrier, and hydrogen bonding promotes the reaction that produces polar intermediates by stabilizing the intermediates and facilitating the H transfer from water, explaining the high selectivity for CO2R over the hydrogen evolution reaction. Consequently, we find that a hybrid coordination environment (with one nitrogen and three carbon atoms) for the Ni-atom is most active and selective for CO2R. Our work not only explains a long-standing puzzle for an important catalyst but also highlights the crucial roles of charge capacity and hydrogen bonding, which can help elucidate the mechanisms of other heterogeneous electrocatalysts in aqueous solution and enable more effective catalyst design.

Why Two-Dimensional Semiconductors Generally Have Low Electron Mobility.

Atomically thin (two-dimensional, 2D) semiconductors have shown great potential as the fundamental building blocks for next-generation electronics. However, all the 2D semiconductors that have been experimentally made so far have room-temperature electron mobility lower than that of bulk silicon, which is not understood. Here, by using first-principles calculations and reformulating the transport equations to isolate and quantify contributions of different mobility-determining factors, we show that the universally low mobility of 2D semiconductors originates from the high "density of scatterings," which is intrinsic to the 2D material with a parabolic electron band. The density of scatterings characterizes the density of phonons that can interact with the electrons and can be fully determined from the electron and phonon band structures without knowledge of electron-phonon coupling strength. Our work reveals the underlying physics limiting the electron mobility of 2D semiconductors and offers a descriptor to quickly assess the mobility.

Cu metal embedded in oxidized matrix catalyst to promote CO2 activation and CO dimerization for electrochemical reduction of CO2.

We propose and validate with quantum mechanics methods a unique catalyst for electrochemical reduction of CO2 (CO2RR) in which selectivity and activity of CO and C2 products are both enhanced at the borders of oxidized and metallic surface regions. This Cu metal embedded in oxidized matrix (MEOM) catalyst is consistent with observations that Cu2O-based electrodes improve performance. However, we show that a fully oxidized matrix (FOM) model would not explain the experimentally observed performance boost, and we show that the FOM is not stable under CO2 reduction conditions. This electrostatic tension between the Cu+ and Cu0 surface sites responsible for the MEOM mechanism suggests a unique strategy for designing more efficient and selective electrocatalysts for CO2RR to valuable chemicals (HCOx), a critical need for practical environmental and energy applications.

Association between obstructive sleep apnea and risk of post-stroke depression: A hospital-based study in ischemic stroke patients.

BACKGROUND AND AIMS: Obstructive sleep apnea (OAS) is a common contributor as well as a frequent co-morbid condition in ischemic stroke. This study aimed to detect the correlation between OSA severity and post-stroke depression (PSD) in ischemic stroke patients. METHODS: From Mar 2017 to Dec 2018, 265 patients with symptom onset less than 14 days were consecutively recruited. All patients underwent polysomnography examination for diagnosis of OSA during hospitalization. PSD was identified using the Chinese version of the Structured Clinical Interview for DSM-IV at admission and 3-month. Logistic regression analyses were performed to assess the association between OSA severity and PSD. RESULTS: Among the 265 patients, the distribution of patients in terms of the OSA severity was as follows: 48 (18.1%) had no OSA, 85 (32.1%) had mild OSA, 54 (20.4%) had moderate OSA, and 78 (29.4%) had severe OSA. Patients diagnosed as PSD at admission and 3-month were 63 (23.8%) and 86 (32.5%), respectively. Univariate analysis showed that reduced OSA severity was correlated with PSD at 3-month (P = 0.003), but not at admission (P = 0.373). In multivariable analysis, after adjustment for covariates, severe OSA (compared with the patients without OSA; odds ratio, 4.04; 95% confidence interval, 1.38-9.62; P = 0.036) was significantly associated with increasing risk of 3-month PSD. Furthermore, multiple-adjusted spline regression model further confirmed a dose-response relationship between apnea-hypopnea index and 3-month PSD (P for linearity < 0.001). CONCLUSIONS: Our data showed that OSA severity was positively associated with 3-month PSD in ischemic stroke patients.

Multifunctional Active-Center-Transferable Platinum/Lithium Cobalt Oxide Heterostructured Electrocatalysts towards Superior Water Splitting.

Designing cost-effective and efficient electrocatalysts plays a pivotal role in advancing the development of electrochemical water splitting for hydrogen generation. Herein, multifunctional active-center-transferable heterostructured electrocatalysts, platinum/lithium cobalt oxide (Pt/LiCoO2 ) composites with Pt nanoparticles (Pt NPs) anchored on LiCoO2 nanosheets, are designed towards highly efficient water splitting. In this electrocatalyst system, the active center can be alternatively switched between Pt species and LiCoO2 for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER), respectively. Specifically, Pt species are the active centers and LiCoO2 acts as the co-catalyst for HER, whereas the active center transfers to LiCoO2 and Pt turns into the co-catalyst for OER. The unique architecture of Pt/LiCoO2 heterostructure provides abundant interfaces with favorable electronic structure and coordination environment towards optimal adsorption behavior of reaction intermediates. The 30 % Pt/LiCoO2 heterostructured electrocatalyst delivers low overpotentials of 61 and 285 mV to achieve 10 mA cm-2 for HER and OER in alkaline medium, respectively.

The Optimal Electronic Structure for High-Mobility 2D Semiconductors: Exceptionally High Hole Mobility in 2D Antimony.

Two-dimensional (2D) semiconductors have very attractive properties for many applications such as photoelectrochemistry. However, a significant challenge that limits their further developments is the relatively low electron/hole mobility at room temperature. Here using the Boltzmann transport theory with the scattering rates calculated from first-principles that allow us to accurately determine the mobility, we discover an exceptionally high intrinsic mobility of holes in monolayer antimony (Sb), which is ∼1330 cm2 V-1 s-1 at room temperature, much higher than the common 2D semiconductors including MoS2, InSe, and black phosphorus in monolayer form, and is the highest among 2D materials with a band gap of >1 eV reported so far. Its high mobility and the moderate band gap make it very promising for many applications. By comparing the 2D Sb with other 2D materials in the same group, we find that the high mobility is closely related with its electronic structure, which has a sharp and deep valence band valley, and, importantly, located at the Γ point. This electronic structure not only gives rise to a high velocity for charge carriers but also leads to a small density of states for accepting the scattered carriers, particularly by eliminating the valley-valley and peak-valley scatterings that are found to be significant for other materials. This type of electronic structure thus can be used as a target feature to design/discover high-mobility 2D semiconductors. Our work provides a promising material to overcome the mobility issue and also suggests a simple and general principle for high-mobility semiconductor design/discovery.