Detalhe da pesquisa
1.
Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics.
Small
; 19(49): e2303595, 2023 Dec.
Artigo
Inglês
| MEDLINE | ID: mdl-37612804
2.
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite.
J Comput Electron
; 22(5): 1327-1337, 2023.
Artigo
Inglês
| MEDLINE | ID: mdl-37840652
3.
An ultrafast photodetector driven by interlayer exciton dissociation in a van der Waals heterostructure.
Nanoscale Horiz
; 7(1): 41-50, 2021 Dec 20.
Artigo
Inglês
| MEDLINE | ID: mdl-34877960
4.
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces.
Sci Rep
; 11(1): 18482, 2021 Sep 16.
Artigo
Inglês
| MEDLINE | ID: mdl-34531506
5.
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source.
ACS Nano
; 14(2): 1982-1989, 2020 Feb 25.
Artigo
Inglês
| MEDLINE | ID: mdl-31935062
6.
GFET Asymmetric Transfer Response Analysis through Access Region Resistances.
Nanomaterials (Basel)
; 9(7)2019 Jul 18.
Artigo
Inglês
| MEDLINE | ID: mdl-31323809